K. K. Allums

566 total citations
22 papers, 494 citations indexed

About

K. K. Allums is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, K. K. Allums has authored 22 papers receiving a total of 494 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Condensed Matter Physics, 14 papers in Electrical and Electronic Engineering and 13 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in K. K. Allums's work include GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (13 papers) and Semiconductor materials and devices (10 papers). K. K. Allums is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (13 papers) and Semiconductor materials and devices (10 papers). K. K. Allums collaborates with scholars based in United States, Australia and Japan. K. K. Allums's co-authors include S. J. Pearton, F. Ren, C. R. Abernathy, R. Wilkins, R. Dwivedi, T. N. Fogarty, B. Luo, Albert G. Baca, J. W. Johnson and A. M. Wowchack and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and New Journal of Physics.

In The Last Decade

K. K. Allums

21 papers receiving 468 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. K. Allums United States 12 368 334 294 139 93 22 494
T. N. Fogarty United States 9 247 0.7× 263 0.8× 200 0.7× 101 0.7× 78 0.8× 21 371
Quentin Diduck United States 9 328 0.9× 412 1.2× 126 0.4× 100 0.7× 114 1.2× 31 490
Erdem Arkun United States 11 279 0.8× 284 0.9× 114 0.4× 77 0.6× 101 1.1× 27 370
Diego Marti Switzerland 14 470 1.3× 504 1.5× 183 0.6× 60 0.4× 177 1.9× 27 601
Luke Gordon United States 9 226 0.6× 338 1.0× 284 1.0× 360 2.6× 85 0.9× 14 582
Sibel Gökden Türkiye 12 495 1.3× 221 0.7× 318 1.1× 253 1.8× 196 2.1× 21 577
R. Venegas Belgium 12 290 0.8× 355 1.1× 153 0.5× 56 0.4× 121 1.3× 35 460
H.-H. Wehmann Germany 15 333 0.9× 226 0.7× 241 0.8× 302 2.2× 162 1.7× 33 568
Dojun Youm South Korea 12 534 1.5× 118 0.4× 279 0.9× 184 1.3× 194 2.1× 64 635
Yingkui Zheng China 16 645 1.8× 528 1.6× 328 1.1× 136 1.0× 165 1.8× 45 706

Countries citing papers authored by K. K. Allums

Since Specialization
Citations

This map shows the geographic impact of K. K. Allums's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. K. Allums with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. K. Allums more than expected).

Fields of papers citing papers by K. K. Allums

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. K. Allums. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. K. Allums. The network helps show where K. K. Allums may publish in the future.

Co-authorship network of co-authors of K. K. Allums

This figure shows the co-authorship network connecting the top 25 collaborators of K. K. Allums. A scholar is included among the top collaborators of K. K. Allums based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. K. Allums. K. K. Allums is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Righter, K., N. G. Lunning, K. Nakamura‐Messenger, et al.. (2023). Curation planning and facilities for asteroid Bennu samples returned by the OSIRIS‐REx mission. Meteoritics and Planetary Science. 58(4). 572–590. 8 indexed citations
2.
3.
Hite, Jennifer K., K. K. Allums, G. T. Thaler, et al.. (2008). Effects of proton irradiation on the magnetic properties of GaGdN and GaCrN. New Journal of Physics. 10(5). 55005–55005. 5 indexed citations
4.
Allums, K. K., Andrew Gerger, F. Ren, et al.. (2007). Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes. Journal of Electronic Materials. 36(4). 519–523. 8 indexed citations
5.
Ren, F., G. T. Thaler, A. H. Onstine, et al.. (2006). Novel dielectrics for gate oxides and surface passivation on GaN. Solid-State Electronics. 50(6). 1016–1023. 33 indexed citations
6.
Allums, K. K.. (2006). Proton radiation and thermal stability of gallium nitride and gallium nitride devices. 1 indexed citations
7.
Ren, F., G. T. Thaler, A. H. Onstine, et al.. (2006). New Dielectrics for Gate Oxides and Surface Passivation on GaN. 130–131. 1 indexed citations
8.
Anderson, Travis J., K. K. Allums, Andrew Gerger, et al.. (2006). Oxide Dielectrics for Reliable Passivation of AlGaN/GaN HEMTs and Insulated Gates. ECS Transactions. 3(5). 141–150. 4 indexed citations
9.
Khanna, Rohit, K. Ip, K. K. Allums, et al.. (2005). Proton irradiation of ZnO schottky diodes. Journal of Electronic Materials. 34(4). 395–398. 16 indexed citations
10.
Khanna, Rohit, K. K. Allums, C. R. Abernathy, et al.. (2004). Effects of high-dose 40MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes. Applied Physics Letters. 85(15). 3131–3133. 31 indexed citations
11.
Ren, F., A. H. Onstine, J. Kim, et al.. (2003). Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(6). 2368–2370. 12 indexed citations
12.
Luo, B., Jihyun Kim, F. Ren, et al.. (2003). Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 82(9). 1428–1430. 33 indexed citations
13.
Luo, B., F. Ren, K. K. Allums, et al.. (2003). Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Solid-State Electronics. 47(6). 1015–1020. 28 indexed citations
14.
Luo, B., J. W. Johnson, F. Ren, et al.. (2002). Effects of High Energy Proton Irradiation on DC Performance of GaAs Metal-Semiconductor Field Effect Transistors. Journal of The Electrochemical Society. 149(4). G236–G236. 2 indexed citations
15.
Luo, B., J. W. Johnson, F. Ren, et al.. (2002). Proton and Gamma-Ray Irradiation Effects on InGaP/GaAs Heterojunction Bipolar Transistors. Journal of The Electrochemical Society. 149(4). G213–G213. 3 indexed citations
16.
Luo, B., J. W. Johnson, F. Ren, et al.. (2002). High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors. Journal of Electronic Materials. 31(5). 437–441. 48 indexed citations
17.
Kim, Jihyun, F. Ren, Gil Yong Chung, et al.. (2002). High energy proton irradiation effects on SiC Schottky rectifiers. Applied Physics Letters. 81(13). 2385–2387. 41 indexed citations
18.
Kim, Jihyun, F. Ren, R. Mehandru, et al.. (2002). High-Energy Proton Irradiation of MgO/GaN Metal Oxide Semiconductor Diodes. Electrochemical and Solid-State Letters. 5(7). G57–G57. 9 indexed citations
19.
Luo, B., J. W. Johnson, F. Ren, et al.. (2002). Influence of Co60 γ-rays on dc performance of AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 80(4). 604–606. 76 indexed citations
20.
Luo, B., J. W. Johnson, F. Ren, et al.. (2001). dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 79(14). 2196–2198. 102 indexed citations

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