Chang‐Cheng Chuo

1.4k total citations
48 papers, 1.2k citations indexed

About

Chang‐Cheng Chuo is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Chang‐Cheng Chuo has authored 48 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Condensed Matter Physics, 24 papers in Atomic and Molecular Physics, and Optics and 19 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Chang‐Cheng Chuo's work include GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (19 papers) and Semiconductor Quantum Structures and Devices (17 papers). Chang‐Cheng Chuo is often cited by papers focused on GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (19 papers) and Semiconductor Quantum Structures and Devices (17 papers). Chang‐Cheng Chuo collaborates with scholars based in Taiwan, United States and Japan. Chang‐Cheng Chuo's co-authors include Jen-Inn Chyi, F. Ren, S. J. Pearton, Tzer‐En Nee, J.‐I. Chyi, Chia-Ming Lee, Makoto Shiojiri, Jer‐Ren Yang, J. T. Hsu and Jen‐Inn Chyi and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Chang‐Cheng Chuo

47 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Chang‐Cheng Chuo Taiwan 22 1.1k 594 456 453 382 48 1.2k
S. Krishnankutty United States 16 1.0k 0.9× 395 0.7× 429 0.9× 576 1.3× 417 1.1× 31 1.2k
D. Buttari United States 18 1.3k 1.2× 990 1.7× 398 0.9× 625 1.4× 360 0.9× 39 1.5k
R. Coffie United States 19 1.5k 1.3× 1.1k 1.8× 375 0.8× 647 1.4× 382 1.0× 40 1.6k
P. Lorenzini France 19 1.1k 1.0× 701 1.2× 450 1.0× 582 1.3× 450 1.2× 63 1.4k
A. Ramakrishnan Germany 12 839 0.8× 509 0.9× 427 0.9× 458 1.0× 418 1.1× 22 1.1k
A. T. Ping United States 21 1.3k 1.2× 1.0k 1.8× 516 1.1× 431 1.0× 260 0.7× 38 1.5k
E. Kohn Germany 14 761 0.7× 652 1.1× 310 0.7× 298 0.7× 178 0.5× 39 943
Amal R. Bhattarai United States 4 1.1k 1.0× 639 1.1× 363 0.8× 462 1.0× 329 0.9× 6 1.2k
M. Gonschorek Switzerland 20 1.5k 1.4× 942 1.6× 444 1.0× 736 1.6× 305 0.8× 36 1.6k
Engin Arslan Türkiye 16 620 0.6× 647 1.1× 531 1.2× 325 0.7× 424 1.1× 48 1.1k

Countries citing papers authored by Chang‐Cheng Chuo

Since Specialization
Citations

This map shows the geographic impact of Chang‐Cheng Chuo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chang‐Cheng Chuo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chang‐Cheng Chuo more than expected).

Fields of papers citing papers by Chang‐Cheng Chuo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chang‐Cheng Chuo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chang‐Cheng Chuo. The network helps show where Chang‐Cheng Chuo may publish in the future.

Co-authorship network of co-authors of Chang‐Cheng Chuo

This figure shows the co-authorship network connecting the top 25 collaborators of Chang‐Cheng Chuo. A scholar is included among the top collaborators of Chang‐Cheng Chuo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chang‐Cheng Chuo. Chang‐Cheng Chuo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chuo, Chang‐Cheng, Kun Yang, Yujie Ai, et al.. (2019). AlGaN-based ultraviolet light-emitting diode on high-temperature annealed sputtered AlN template. Journal of Alloys and Compounds. 794. 8–12. 31 indexed citations
2.
Wang, Ting‐Yu, et al.. (2007). Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers. MATERIALS TRANSACTIONS. 48(5). 894–898. 14 indexed citations
3.
Nee, Tzer‐En, et al.. (2007). Anomalous Optical Characteristics of Carrier Transfer Process in Quaternary AlInGaN Multiple Quantum Well Heterostructure. Japanese Journal of Applied Physics. 46(4S). 2558–2558. 3 indexed citations
4.
Shiojiri, Makoto, Miran C̆eh, Sašo Šturm, et al.. (2006). Structural and compositional analyses of a strained AlGaN∕GaN superlattice. Journal of Applied Physics. 100(1). 13 indexed citations
5.
Shiojiri, Makoto, Chang‐Cheng Chuo, J. T. Hsu, Jer‐Ren Yang, & H. Saijo. (2006). Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers. Journal of Applied Physics. 99(7). 123 indexed citations
6.
Kuo, Hao‐Chung, et al.. (2005). Quaternary AlInGaN multiple quantum well 368nm light-emitting diode. Journal of Crystal Growth. 287(2). 582–585. 15 indexed citations
7.
Tu, R. C., C. J. Tun, Haiping Liu, et al.. (2003). Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers. IEEE Photonics Technology Letters. 15(8). 1050–1052. 6 indexed citations
8.
Chuo, Chang‐Cheng, et al.. (2002). Localized and quantum-well state excitons in AlInGaN laser-diode structure. Physical review. B, Condensed matter. 66(16). 8 indexed citations
9.
Pearton, S. J., F. Ren, A.P. Zhang, et al.. (2001). GaN electronics for high power, high temperature applications. Materials Science and Engineering B. 82(1-3). 227–231. 92 indexed citations
10.
Hsu, T. M., et al.. (2001). Piezoelectric Field-Induced Quantum-Confined Stark Effect in InGaN/GaN Multiple Quantum Wells. physica status solidi (b). 228(1). 77–80. 7 indexed citations
11.
Johnson, J. W., F. Ren, F. Ren, et al.. (2001). Schottky rectifiers fabricated on free-standing GaN substrates. Solid-State Electronics. 45(3). 405–410. 34 indexed citations
12.
Chuo, Chang‐Cheng, Chia-Ming Lee, & Jen-Inn Chyi. (2001). Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells. Applied Physics Letters. 78(3). 314–316. 68 indexed citations
13.
Zhan, Alan, G. Dang, F. Ren, et al.. (2001). Comparison of GaN p-i-n and Schottky rectifier performance. IEEE Transactions on Electron Devices. 48(3). 407–411. 65 indexed citations
14.
Ren, F., A.P. Zhang, G. Dang, et al.. (2000). Surface and bulk leakage currents in high breakdown GaN rectifiers. Solid-State Electronics. 44(4). 619–622. 25 indexed citations
15.
Johnson, J. W., B. Luo, F. Ren, et al.. (2000). Gd 2 O 3 / GaN metal-oxide-semiconductor field-effect transistor. Applied Physics Letters. 77(20). 3230–3232. 83 indexed citations
16.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2000). Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors. Solid-State Electronics. 44(9). 1549–1555. 1 indexed citations
17.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2000). Spatial distribution of electrical properties in GaN p-i-n rectifiers. Solid-State Electronics. 44(9). 1591–1595. 4 indexed citations
18.
Chuo, Chang‐Cheng, et al.. (2000). Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer. Solid-State Electronics. 44(8). 1483–1486. 7 indexed citations
19.
Hsieh, K. C., et al.. (1999). Behavior of arsenic precipitation in low-temperature grown III–V arsenides. Journal of Crystal Growth. 201-202. 212–216. 3 indexed citations
20.
Chuo, Chang‐Cheng, et al.. (1999). Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching. Applied Physics Letters. 75(19). 3032–3034. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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