Albert G. Baca

4.9k citations

162 papers · 3.9k indexed · h-index 36

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 93
- GaN-based semiconductor devices and materials 93
Electronic, Optical and Magnetic Materials 50
- Ga2O3 and related materials 47

Co-authors: S. J. Pearton F. Ren Andrew A. Allerman R. J. Shul Andrew Armstrong Robert Kaplar E Douglas J.C. Zolper
Journals: Applied Physics Letters (26 papers)Solid-State Electronics (17 papers)Electronics Letters (8 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (5 papers)ECS Journal of Solid State Science and Technology (5 papers)
Partner nations: United States South Korea Austria

In The Last Decade

Albert G. Baca

155 papers receiving 3.7k citations

Peers

Countries citing papers authored by Albert G. Baca

Since Specialization

Citations

This map shows the geographic impact of Albert G. Baca's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Albert G. Baca with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Albert G. Baca more than expected).

Fields of papers citing papers by Albert G. Baca

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Albert G. Baca. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Albert G. Baca. The network helps show where Albert G. Baca may publish in the future.

Co-authors

The 25 scholars most cited alongside Albert G. Baca, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Albert G. Baca Line = papers co-authored together Albert G. Baca links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Patrick H. Carey, F. Ren, Andrew Armstrong, Brianna Klein, Andrew A. Allerman, E Douglas, Albert G. Baca, S. J. Pearton	2020	4
2	Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor Applied Physics Letters ·James Spencer Lundh, Bikramjit Chatterjee, Yiwen Song, Albert G. Baca, Robert Kaplar, Thomas E. Beechem, Andrew A. Allerman, Andrew Armstrong, Brianna Klein, Anushka Bansal, A VanBrakel, Alexej Pogrebnyakov, Eric R. Heller, Venkatraman Gopalan, Joan M. Redwing, Brian M. Foley, Sukwon Choi	2019	37
3	High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study Japanese Journal of Applied Physics ·肖岁利, Brianna Klein, Albert G. Baca, Andrew Armstrong, Andrew A. Allerman, E Douglas, Robert Kaplar	2019	10
4	AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlN Applied Physics Letters ·Andrew Armstrong, Brianna Klein, Albert G. Baca, Andrew A. Allerman, E Douglas, 久昌武井, Kunio Kobayshi, Torben R. Fortune	2019	24
5	RF Performance of Al_0.85Ga_0.15N/Al_0.70Ga_0.30N High Electron Mobility Transistors With 80-nm Gates IEEE Electron Device Letters ·Albert G. Baca, Brianna Klein, Joel R. Wendt, F. W. Pauli, Christopher Nordquist, Andrew Armstrong, Andrew A. Allerman, E Douglas, Robert Kaplar	2018	49
6	Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Yuyin Xi, Yueh-Ling Hsieh, 韦云, Shun Li, F. Ren, S. J. Pearton, Erin Patrick, Mark E. Law, Gwangseok Yang, Hong-Yeol Kim, Jihyun Kim, Albert G. Baca, Andrew A. Allerman, Carlos Anthony Sanchez	2013	12
7	Fiber-optic Control Of Current Filaments In High Gain Photoconductive Semiconductor Switches F.J. Zutavern, G.M. Loubriel, W.D. Helgeson, M.W. O'Malley, F. Debretsion, Albert G. Baca, T.A. Plut, Harold P. Hjalmarson	2005	0
8	Performance of AlGaN/GaN High Electron Mobility Transistors at Nanoscale Gate Lengths Journal of Nanoscience and Nanotechnology ·John Johnson, F. Ren, S. J. Pearton, Albert G. Baca, Abdel-Ameer Al-Laith, A. M. Dabiran, В.А. Марихин	2002	7
9	AlGaAs/InGaAlP tunnel junctions for multi-junction solar cells Paul Sharps, Risa M. Mish, Shannon Forland, V Recea, ahmed khamies mohamed, Albert G. Baca	2002	2
10	GaN electronics for high power, high temperature applications Materials Science and Engineering B ·S. J. Pearton, F. Ren, A.P. Zhang, G. Dang, 福喜多興二, K.P. Lee, H. Cho, F. Ren, J. W. Johnson, C. Monier, C. R. Abernathy, Jung Han, Albert G. Baca, Jen‐Inn Chyi, Vandana Panjwani, Tzer‐En Nee, Chang‐Cheng Chuo, S. N. G. Chu	2001	92
11	Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE Solid-State Electronics ·J. W. Johnson, Albert G. Baca, R. D. Briggs, R. J. Shul, J. R. Wendt, C. Monier, F. Ren, S. J. Pearton, A. M. Dabiran, A. M. Wowchack, C. J. Polley, P. P. Chow	2001	29
12	Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium Electrochemical Society eBooks ·Pinchuk Gennady, R. F. Kopf, Albert G. Baca, S. N. G. Chu	2000	2
13	InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor Applied Physics Letters ·ahmed khamies mohamed, Albert G. Baca, C Pinkwart, Paul Sharps, H.Q. Hou, J. R. LaRoche, F. Ren	2000	36
14	Dielectrics for GaN Based MIS-Diodes MRS Proceedings ·F. Ren, C. R. Abernathy, J. D. MacKenzie, F. Ren, S. J. Pearton, M. Hong, Rodrigo Souza Pereira Lopes, M. Schurman, Albert G. Baca, R. J. Shul	1997	4
15	Ecr Etching of GaP, GaAs, InP, and InGaAs in Cl₂/Ar, Cl₂/N₂, BCl₃/Ar, and BCl₃/N₂ MRS Proceedings ·R. J. Shul, Albert G. Baca, D. J. Rieger, H.Q. Hou, S. J. Pearton, F. Ren	1996	10
16	Etching of sub-0.5 µm W/WSi _x bilayer gates Electronics Letters ·R. J. Shul, M.E. Sherwin, Albert G. Baca, D. J. Rieger	1996	10
17	Trenching observed during sidewall formation inGaAs self-aligned refractory gate FETs Electronics Letters ·Albert G. Baca, A. J. Howard, R. J. Shul, M.E. Sherwin	1996	1
18	Sputtered AlN encapsulant for high-temperature annealing of GaN Applied Physics Letters ·J.C. Zolper, D. J. Rieger, Albert G. Baca, S. J. Pearton, J. W. Lee, R. A. Stall	1996	76
19	Complementary GaAs junction-gated heterostructure field effect transistor technology Albert G. Baca, J.C. Zolper, M.E. Sherwin, 原英則, R. J. Shul, A. J. Howard, D. J. Rieger, John F. Klem	1994	7
20	An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p/sup +/-GaAs ohmic gate contact IEEE Transactions on Electron Devices ·J.C. Zolper, Albert G. Baca, R. J. Shul, A. J. Howard, D. J. Rieger, M.E. Sherwin, M. L. Lovejoy, Harold P. Hjalmarson, B.L. Draper, John F. Klem, V.M. Hietala	1994	8

About Albert G. Baca

Albert G. Baca is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Control and Systems Engineering, having authored 162 papers that have together received 3.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (93 papers), Semiconductor materials and devices (77 papers), Ga2O3 and related materials (47 papers), Silicon Carbide Semiconductor Technologies (30 papers), Semiconductor Quantum Structures and Devices (28 papers), Integrated Circuits and Semiconductor Failure Analysis (22 papers), Semiconductor materials and interfaces (22 papers) and Advancements in Semiconductor Devices and Circuit Design (21 papers). The work is most often cited by research in Condensed Matter Physics (2.5k citations), Electronic, Optical and Magnetic Materials (1.4k citations), Electrical and Electronic Engineering (2.6k citations), Atomic and Molecular Physics, and Optics (1.1k citations) and Materials Chemistry (1.1k citations). Albert G. Baca has collaborated with scholars based in United States, South Korea and Austria. Frequent co-authors include S. J. Pearton, F. Ren, Andrew A. Allerman, R. J. Shul, Andrew Armstrong, Robert Kaplar, E Douglas, J.C. Zolper, C. R. Abernathy and Brianna Klein. Their work appears in journals such as Applied Physics Letters, Solid-State Electronics, Electronics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and ECS Journal of Solid State Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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