Yoshihiro Irokawa

1.7k citations

93 papers · 1.4k indexed · h-index 21

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 73
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 36
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 62
- Silicon Carbide Semiconductor Technologies 14
- Gas Sensing Nanomaterials and Sensors 5
Renewable Energy, Sustainability and the Environment top 10%
Materials Chemistry top 10%
- ZnO doping and properties 11
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 19
Mechanics of Materials
- Metal and Thin Film Mechanics 8

Co-authors: Takeshi Morikawa Takeshi Ohwaki F. Ren S. J. Pearton Yoshitaka Nakano Tetsu Kachi C. R. Abernathy A. H. Onstine
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Japanese Journal of Applied Physics (16 papers)Applied Physics Letters (9 papers)Journal of Applied Physics (5 papers)
Partner nations: Japan United States Taiwan

In The Last Decade

Yoshihiro Irokawa

89 papers receiving 1.4k citations

Peers

Countries citing papers authored by Yoshihiro Irokawa

Since Specialization

Citations

This map shows the geographic impact of Yoshihiro Irokawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yoshihiro Irokawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yoshihiro Irokawa more than expected).

Fields of papers citing papers by Yoshihiro Irokawa

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yoshihiro Irokawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yoshihiro Irokawa. The network helps show where Yoshihiro Irokawa may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Yoshihiro Irokawa, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yoshihiro Irokawa Line = papers co-authored together Yoshihiro Irokawa links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures Materials Science in Semiconductor Processing ·Masahiro Hara,Toshihide Nabatame,Yoshihiro Irokawa,Fitri Ayulanda,A. Nonlinear Regularization,Michi-ko Oikawa,Tsunenobu Kimoto,Yasuo Koide	2025	0
2	Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers Journal of Applied Physics ·Shigefusa F. Chichibu,Kohei Shima,Akira Uedono,Shoji Ishibashi,Hiroko Iguchi,Tetsuo Narita,Keita Kataoka,Ryo Tanaka,Shinya Takashima,E G Chavez-Cortez,Masaharu Edo,Hirotaka Watanabe,Atsushi Tanaka,Yoshio Honda,Jun Suda,Hiroshi Amano,Tetsu Kachi,Toshihide Nabatame,Yoshihiro Irokawa,Yasuo Koide	2024	7
3	Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen ECS Journal of Solid State Science and Technology ·Yoshihiro Irokawa,Akihiko Ohi,Toshihide Nabatame,Yasuo Koide	2024	0
4	Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO₂ Process ECS Journal of Solid State Science and Technology ·Yoshihiro Irokawa,Toshihide Nabatame,Fitri Ayulanda,A. Nonlinear Regularization,Michi-ko Oikawa,Kazuhito Tsukagoshi,Yasuo Koide	2024	1
5	Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates Japanese Journal of Applied Physics ·Yoshihiro Irokawa,光一木村,Toshihide Nabatame,Yasuo Koide	2021	1
6	Effect of hydrogen on Pt/GaN Schottky diodes Japanese Journal of Applied Physics ·Yoshihiro Irokawa	2020	3
7	Characteristics of Al ₂ O ₃ /native oxide/n-GaN capacitors by post-metallization annealing Semiconductor Science and Technology ·Bingjie Gao,Toshihide Nabatame,Yoshihiro Irokawa,Akihiko Ohi,Naoki Ikeda,Liwen Sang,Yasuo Koide,Tomoji Ohishi	2019	25
8	Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography CrystEngComm ·Jaemyung Kim,Okkyun Seo,Chulho Song,Satoshi Hiroi,Yanna Chen,Yoshihiro Irokawa,Toshihide Nabatame,Yasuo Koide,Osami Sakata	2019	2
9	Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN Bingjie Gao,Toshihide Nabatame,Yoshihiro Irokawa,Akihiko Ohi,Naoki Ikeda,Akira Uedono,Liwen Sang,Yasuo Koide,Tomoji Ohishi	2019	2
10	Hydrogen effect on Pt/Al ₂ O ₃ /GaN metal-oxide-semiconductor capacitors Japanese Journal of Applied Physics ·Yoshihiro Irokawa,Toshihide Nabatame,Akihiko Ohi,Naoki Ikeda,Osami Sakata,Yasuo Koide	2019	6
11	Characterization of a 4-inch GaN wafer by X-ray diffraction topography CrystEngComm ·Jaemyung Kim,Okkyun Seo,Chulho Song,Yanna Chen,Satoshi Hiroi,Yoshihiro Irokawa,Toshihide Nabatame,Yasuo Koide,Osami Sakata	2018	9
12	Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates CrystEngComm ·Sultan Althobaiti,Chulho Song,Yanna Chen,L. S. R. Kumara,Natalia Palina,Okkyun Seo,Satoshi Hiroi,Kentaro Kajiwara,Masato Hoshino,Kentaro Uesugi,Yoshihiro Irokawa,Toshihide Nabatame,Yasuo Koide,Osami Sakata	2018	6
13	Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates Nanoscale Research Letters ·A.A. Baibakoff,Kazutaka Mitsuishi,Toru Hara,Koji Kimoto,Yoshihiro Irokawa,Toshihide Nabatame,Shinya Takashima,Katsunori Ueno,Masaharu Edo,Yasuo Koide	2018	20
14	Low-energy ion scattering spectroscopy and reflection high-energy electron diffraction of native oxides on GaN(0001) Japanese Journal of Applied Physics ·Yoshihiro Irokawa,Taku Suzuki,Bingjie Gao,Akihiko Ohi,Toshihide Nabatame,Koji Kimoto,Tsuyoshi Ohnishi,Kazutaka Mitsuishi,Yasuo Koide	2017	19
15	Anomalous capacitance–voltage characteristics of Pt–AlGaN/GaN Schottky diodes exposed to hydrogen Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Yoshihiro Irokawa,Nobuyuki Matsuki,Masatomo Sumiya,Yoshiki Sakuma,Takashi Sekiguchi,Lara Pätzold,Shravani Deshmukh,Yoshitaka Nakano	2010	8
16	Electrical characterization of n ‐GaN epilayers using transparent polyaniline Schottky contacts Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Yoshitaka Nakano,Nobuyuki Matsuki,Yoshihiro Irokawa,Masatomo Sumiya	2010	3
17	Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes Applied Physics Express ·Nobuyuki Matsuki,Yoshihiro Irokawa,Takuya Matsui,Michio Kondo,Masatomo Sumiya	2009	16
18	Activation characteristics of ion-implanted Si+ in AlGaN Applied Physics Letters ·Yoshihiro Irokawa,Y. Miyazaki,Tetsu Kachi,S. J. Pearton,F. Ren	2005	15
19	Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface MRS Proceedings ·F. Ren,B. Luo,J. Kim,R. Mehandru,F. Ren,A. H. Onstine,C. R. Abernathy,S. J. Pearton,Robert Fitch,J. Gillespie,T. Jenkins,J. Sewell,D. Via,Antonio Crespo,Yoshihiro Irokawa	2003	1
20	Observation of inversion behavior in n-type GaN planar metal–insulator–semiconductor capacitor Solid-State Electronics ·Yoshihiro Irokawa,Yoshitaka Nakano	2002	11

About Yoshihiro Irokawa

Yoshihiro Irokawa is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Surfaces, Coatings and Films and Atomic and Molecular Physics, and Optics, having authored 93 papers that have together received 1.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (73 papers), Semiconductor materials and devices (62 papers), Ga2O3 and related materials (36 papers), Semiconductor materials and interfaces (19 papers), Silicon Carbide Semiconductor Technologies (14 papers), ZnO doping and properties (11 papers), Metal and Thin Film Mechanics (8 papers) and Gas Sensing Nanomaterials and Sensors (5 papers). The work is most often cited by research in Condensed Matter Physics (843 citations), Electronic, Optical and Magnetic Materials (527 citations), Electrical and Electronic Engineering (944 citations), Renewable Energy, Sustainability and the Environment (241 citations) and Materials Chemistry (487 citations). Yoshihiro Irokawa has collaborated with scholars based in Japan, United States and Taiwan. Frequent co-authors include Takeshi Morikawa, Takeshi Ohwaki, F. Ren, S. J. Pearton, Yoshitaka Nakano, Tetsu Kachi, F. Ren, C. R. Abernathy, A. H. Onstine and Yasuo Koide. Their work appears in journals such as Japanese Journal of Applied Physics, Applied Physics Letters, Journal of Applied Physics, Solid-State Electronics and Electrochemical and Solid-State Letters.

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