Yoshihiro Irokawa

1.7k total citations
93 papers, 1.4k citations indexed

About

Yoshihiro Irokawa is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yoshihiro Irokawa has authored 93 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 73 papers in Condensed Matter Physics, 70 papers in Electrical and Electronic Engineering and 36 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yoshihiro Irokawa's work include GaN-based semiconductor devices and materials (73 papers), Semiconductor materials and devices (62 papers) and Ga2O3 and related materials (36 papers). Yoshihiro Irokawa is often cited by papers focused on GaN-based semiconductor devices and materials (73 papers), Semiconductor materials and devices (62 papers) and Ga2O3 and related materials (36 papers). Yoshihiro Irokawa collaborates with scholars based in Japan, United States and Taiwan. Yoshihiro Irokawa's co-authors include Takeshi Morikawa, Takeshi Ohwaki, F. Ren, S. J. Pearton, Yoshitaka Nakano, Tetsu Kachi, C. R. Abernathy, F. Ren, A. H. Onstine and Toshihide Nabatame and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Yoshihiro Irokawa

89 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yoshihiro Irokawa Japan 21 944 843 527 487 241 93 1.4k
Chung-Lin Wu Taiwan 17 437 0.5× 320 0.4× 288 0.5× 626 1.3× 211 0.9× 31 989
F. Z. Chien Taiwan 20 325 0.3× 361 0.4× 488 0.9× 760 1.6× 213 0.9× 60 1.3k
J. Borysiuk Poland 24 517 0.5× 626 0.7× 453 0.9× 881 1.8× 60 0.2× 111 1.6k
Mark E. White United States 25 774 0.8× 225 0.3× 476 0.9× 990 2.0× 135 0.6× 47 1.4k
N. Ben Sédrine Portugal 18 633 0.7× 279 0.3× 249 0.5× 789 1.6× 213 0.9× 67 1.2k
Chao An China 21 521 0.6× 287 0.3× 322 0.6× 669 1.4× 157 0.7× 73 1.2k
Xuemei Wu China 12 407 0.4× 978 1.2× 560 1.1× 736 1.5× 75 0.3× 21 1.4k
C. J. Youn South Korea 20 1.1k 1.2× 290 0.3× 804 1.5× 1.6k 3.3× 71 0.3× 82 1.8k
M. R. Mohammadizadeh Iran 22 244 0.3× 322 0.4× 263 0.5× 616 1.3× 330 1.4× 74 1.2k
Hironori Ofuchi Japan 17 556 0.6× 169 0.2× 306 0.6× 719 1.5× 370 1.5× 73 1.2k

Countries citing papers authored by Yoshihiro Irokawa

Since Specialization
Citations

This map shows the geographic impact of Yoshihiro Irokawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yoshihiro Irokawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yoshihiro Irokawa more than expected).

Fields of papers citing papers by Yoshihiro Irokawa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yoshihiro Irokawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yoshihiro Irokawa. The network helps show where Yoshihiro Irokawa may publish in the future.

Co-authorship network of co-authors of Yoshihiro Irokawa

This figure shows the co-authorship network connecting the top 25 collaborators of Yoshihiro Irokawa. A scholar is included among the top collaborators of Yoshihiro Irokawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yoshihiro Irokawa. Yoshihiro Irokawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hara, Masahiro, et al.. (2025). A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures. Materials Science in Semiconductor Processing. 196. 109606–109606.
2.
Chichibu, Shigefusa F., Kohei Shima, Akira Uedono, et al.. (2024). Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers. Journal of Applied Physics. 135(18). 7 indexed citations
3.
Irokawa, Yoshihiro, et al.. (2024). Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process. ECS Journal of Solid State Science and Technology. 13(8). 85003–85003. 1 indexed citations
4.
Irokawa, Yoshihiro, Akihiko Ohi, Toshihide Nabatame, & Yasuo Koide. (2024). Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen. ECS Journal of Solid State Science and Technology. 13(4). 45002–45002.
5.
Irokawa, Yoshihiro, et al.. (2021). Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates. Japanese Journal of Applied Physics. 60(6). 68003–68003. 1 indexed citations
6.
Nabatame, Toshihide, Yoshihiro Irokawa, Akihiko Ohi, et al.. (2019). Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN. 368–370. 2 indexed citations
7.
Kim, Jaemyung, Okkyun Seo, Chulho Song, et al.. (2019). Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography. CrystEngComm. 21(14). 2281–2285. 2 indexed citations
8.
Nabatame, Toshihide, Yoshihiro Irokawa, Akihiko Ohi, et al.. (2019). Characteristics of Al 2 O 3 /native oxide/n-GaN capacitors by post-metallization annealing. Semiconductor Science and Technology. 34(3). 34001–34001. 25 indexed citations
9.
Irokawa, Yoshihiro, Toshihide Nabatame, Akihiko Ohi, et al.. (2019). Hydrogen effect on Pt/Al 2 O 3 /GaN metal-oxide-semiconductor capacitors. Japanese Journal of Applied Physics. 58(10). 100915–100915. 6 indexed citations
10.
Nabatame, Toshihide, et al.. (2019). (Invited) Characteristics of Several High-k Gate Insulators for GaN Power Device. ECS Transactions. 92(4). 109–117. 4 indexed citations
11.
Song, Chulho, Yanna Chen, L. S. R. Kumara, et al.. (2018). Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates. CrystEngComm. 20(20). 2861–2867. 6 indexed citations
12.
Kim, Jaemyung, Okkyun Seo, Chulho Song, et al.. (2018). Characterization of a 4-inch GaN wafer by X-ray diffraction topography. CrystEngComm. 20(48). 7761–7765. 9 indexed citations
13.
Irokawa, Yoshihiro. (2011). Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces. Sensors. 11(1). 674–695. 27 indexed citations
14.
Matsuki, Nobuyuki, Yoshihiro Irokawa, Takuya Matsui, Michio Kondo, & Masatomo Sumiya. (2009). Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes. Applied Physics Express. 2(9). 92201–92201. 16 indexed citations
15.
Nakano, Yoshitaka, Yoshihiro Irokawa, & Masaki Takeguchi. (2008). Deep-Level Optical Spectroscopy Investigation of Band Gap States in AlGaN/GaN Hetero-Interfaces. Applied Physics Express. 1. 91101–91101. 28 indexed citations
16.
Irokawa, Yoshihiro, et al.. (2005). Activation characteristics of ion-implanted Si+ in AlGaN. Applied Physics Letters. 86(19). 15 indexed citations
17.
Kang, B. S., et al.. (2004). Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(2). 710–714. 18 indexed citations
18.
Irokawa, Yoshihiro, B. Luo, B. S. Kang, et al.. (2003). 2.6 A, 0.69 MW cm−2 single-chip bulk GaN p-i-n rectifier. Solid-State Electronics. 48(2). 359–361. 2 indexed citations
19.
Irokawa, Yoshihiro & Yoshitaka Nakano. (2002). Observation of inversion behavior in n-type GaN planar metal–insulator–semiconductor capacitor. Solid-State Electronics. 46(9). 1467–1469. 11 indexed citations
20.
Irokawa, Yoshihiro, et al.. (1996). RHEED-ISS study on the surface at high temperature. Surface Science. 367(1). 96–104. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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