A. Usikov

2.0k citations

120 papers · 1.6k indexed · h-index 21

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 104
- GaN-based semiconductor devices and materials 102
Electronic, Optical and Magnetic Materials 54
- Ga2O3 and related materials 53

Co-authors: H. Helava M. A. Reshchikov Yu.N. Makarov V. Dmitriev V. Soukhoveev D. O. Demchenko W. V. Lundin O. V. Kovalenkov
Journals: Applied Physics Letters (6 papers)physica status solidi (b) (6 papers)Journal of Applied Physics (5 papers)Solid-State Electronics (5 papers)Scientific Reports (4 papers)
Partner nations: Russia United States Germany

In The Last Decade

A. Usikov

118 papers receiving 1.6k citations

Peers

Countries citing papers authored by A. Usikov

Since Specialization

Citations

This map shows the geographic impact of A. Usikov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Usikov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Usikov more than expected).

Fields of papers citing papers by A. Usikov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Usikov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Usikov. The network helps show where A. Usikov may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Usikov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Usikov Line = papers co-authored together A. Usikov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Quality Assessment of Processed Graphene Chips for Biosensor Application Materials ·N. M. Shmidt, 千春木場, S. Acharya, Glenda Guest, I. A. Eliseyev, С. П. Лебедев, Tingjiang Guo, Keon-Tae Son, Alexandre Bertola, A. D. Roenkov, A. Usikov, A. А. Lebedev	2023	1
2	Modification in adsorption properties of graphene during the development of viral biosensors Физика и техника полупроводников ·H. Chen, Hongbing Wu, С. А. Клотченко, A. А. Lebedev, 安原正也, С. П. Лебедев, А. В. Нащекин, V. N. Petrov, Alexandre Bertola, Rudi Hermi, Н. В. Остапчук, Keon-Tae Son, A. Usikov, Yehia Nassef Mohamed, Christophe Fabriès	2022	1
3	Unusual properties of the RY3 center in GaN Physical review. B. ·M. A. Reshchikov, E. Faist, Ü. Özgür, D. O. Demchenko, J. D. McNamara, Vera Prozheeva, Filip Tuomisto, H. Helava, A. Usikov, Yu.N. Makarov	2019	19
4	Two yellow luminescence bands in undoped GaN Scientific Reports ·M. A. Reshchikov, J. D. McNamara, H. Helava, A. Usikov, Yu.N. Makarov	2018	58
5	Evaluation of the concentration of point defects in GaN Scientific Reports ·M. A. Reshchikov, A. Usikov, H. Helava, Yu.N. Makarov, Vera Prozheeva, Ilja Makkonen, Filip Tuomisto, Jacob H. Leach, Kevin Udwary	2017	58
6	Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence Scientific Reports ·M. A. Reshchikov, J. D. McNamara, Mykyta Toporkov, V. Avrutin, H. Morkoç̌, A. Usikov, H. Helava, Yu.N. Makarov	2016	41
7	The efficiency of UV LEDs based on GaN/AlGaN heterostructures Journal of Physics Conference Series ·Ljiljana Balorda, S A Tarasov, Basem Abdullrahman Fallatah, A. Usikov, Людмила Тептюк, H. Helava, Yu.N. Makarov, А. В. Соломонов	2015	0
8	Radiation hardness of n-GaN schottky diodes Semiconductors ·A. A. Lebedev, 将史今井, M. G. Mynbaeva, Anatoly M. Strel’chuk, Е. В. Богданова, Yu.N. Makarov, A. Usikov, Basem Abdullrahman Fallatah, Curi de Montbrun S, A. D. Roenkov, V. V. Kozlovski	2015	2
9	DEEP TRAPS SPECTRA IN UNDOPED GAN FILMS GROWN BY HYDRIDE VAPOR PHASE EPITAXY UNDER VARIOUS CONDITIONS American Journal of Applied Sciences ·A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, H. M. Cox, A. Usikov, H. Helava, Yu.N. Makarov, E. B. Yakimov, R. G. Degtyar	2014	4
10	Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy Journal of Applied Physics ·In‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. Usikov, H. Helava, Yu.N. Makarov, S. J. Pearton	2014	37
11	Accumulation of Background Impurities in Hydride Vapor Phase Epitaxy Grown GaN Layers Japanese Journal of Applied Physics ·A. Usikov, V. Soukhoveev, O. V. Kovalenkov, A. L. Syrkin, Miriam Denisse García-Villa, E Broszeit, V. Ivantsov	2013	10
12	Semi‐polar nitride surfaces and heterostructures physica status solidi (b) ·A. Strittmatter, John E. Northrup, N. M. Johnson, Mikhail V. Kisin, Elise Forestier, Hussein S. El‐Ghoroury, A. Usikov, A. L. Syrkin	2010	66
13	Structural characterization of thick (1122) GaN layers grown by HVPE on m‐plane sapphire physica status solidi (a) ·A. Usikov, V. Soukhoveev, 昇東山, A. L. Syrkin, V. Ivantsov, Tar Heel Barrister, A. Yu. Nikiforov, A. Strittmatter, N. M. Johnson, Jian‐Guo Zheng, Elise Forestier, Hussein S. El‐Ghoroury	2010	4
14	AlGaN epitaxial layers grown by HVPE on sapphire substrates Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·V. Soukhoveev, O. V. Kovalenkov, Wei Gang-cai, V. Ivantsov, A. Usikov, V. Dmitriev, V. Yu. Davydov, A. N. Smirnov	2006	9
15	Recent results on AlN growth by HVPE and fabrication of free standing AlN wafers Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·V. Soukhoveev, O. V. Kovalenkov, V. Ivantsov, A. L. Syrkin, A. Usikov, Sisi Chen, V. Dmitriev	2006	17
16	P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE MRS Proceedings ·A. Usikov, O. V. Kovalenkov, V. Ivantsov, H Wauer, V. Dmitriev, N. M. Shmidt, D. S. Poloskin, V. N. Petrov, В. В. Ратников	2004	3
17	EBIC Characterization of III–Nitride Structures Using Multifractal Parameterization Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·N. M. Shmidt, Gautam Kr Pankaj, А. Г. Колмаков, I Wojakowski, W. V. Lundin, A. Usikov, E. B. Yakimov, E. E. Zavarin	2002	3
18	Growth and Characterization of AlGaN/GaN Superlattices physica status solidi (a) ·W. V. Lundin, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin, Adam Miller, Басырова Екатерина Робертовна, R. N. Kyutt, V. Yu. Davydov, Juan Carlos De la Cerda-Ángeles, Sani Ibrahim, A. Usikov	2001	7
19	Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films MRS Internet Journal of Nitride Semiconductor Research ·A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. Usikov, N. M. Shmidt, 石凤, D. Tsvetkov, Kerstin Christina Weißmann, V. Dmitriev, M. G. Mil’vidskiĭ, Camilla Israelsson	2000	4
20	Lasing in Vertical Direction in Structures with InGaN Quantum Dots physica status solidi (a) ·I. L. Krestnikov, A. V. Sakharov, W. V. Lundin, A. Usikov, A. F. Tsatsul’nikov, N. N. Ledentsov, Zh. I. Alfërov, I. P. Soshnikov, Dagmar Gerthsen, 中山恵理, J. Holst, A. Hoffmann, D. Bimberg	2000	2

About A. Usikov

A. Usikov is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 120 papers that have together received 1.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (102 papers), Ga2O3 and related materials (53 papers), Semiconductor Quantum Structures and Devices (35 papers), ZnO doping and properties (31 papers), Semiconductor materials and devices (25 papers), Photocathodes and Microchannel Plates (15 papers), Metal and Thin Film Mechanics (11 papers) and Silicon Carbide Semiconductor Technologies (8 papers). The work is most often cited by research in Condensed Matter Physics (1.4k citations), Electronic, Optical and Magnetic Materials (792 citations), Atomic and Molecular Physics, and Optics (511 citations), Materials Chemistry (747 citations) and Electrical and Electronic Engineering (566 citations). A. Usikov has collaborated with scholars based in Russia, United States and Germany. Frequent co-authors include H. Helava, M. A. Reshchikov, Yu.N. Makarov, V. Dmitriev, V. Soukhoveev, D. O. Demchenko, W. V. Lundin, O. V. Kovalenkov, J. D. McNamara and V. Ivantsov. Their work appears in journals such as Applied Physics Letters, physica status solidi (b), Journal of Applied Physics, Solid-State Electronics and Scientific Reports.

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