K. Ip

5.9k total citations · 2 hit papers
54 papers, 3.6k citations indexed

About

K. Ip is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, K. Ip has authored 54 papers receiving a total of 3.6k indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Materials Chemistry, 33 papers in Electrical and Electronic Engineering and 19 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in K. Ip's work include ZnO doping and properties (45 papers), Gas Sensing Nanomaterials and Sensors (21 papers) and Ga2O3 and related materials (18 papers). K. Ip is often cited by papers focused on ZnO doping and properties (45 papers), Gas Sensing Nanomaterials and Sensors (21 papers) and Ga2O3 and related materials (18 papers). K. Ip collaborates with scholars based in United States, Russia and Australia. K. Ip's co-authors include S. J. Pearton, D. P. Norton, Young-Woo Heo, T. Steiner, F. Ren, M. Ivill, M. F. Chisholm, J. M. Zavada, M. E. Overberg and N. B. Smirnov and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

K. Ip

53 papers receiving 3.5k citations

Hit Papers

Recent advances in processing of ZnO 2004 2026 2011 2018 2004 2004 100 200 300 400 500

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Ip United States 28 3.3k 2.1k 1.4k 292 258 54 3.6k
Y. Lu United States 17 2.2k 0.7× 1.6k 0.7× 941 0.7× 202 0.7× 440 1.7× 42 2.6k
D.Z. Shen China 40 4.1k 1.2× 2.5k 1.2× 2.2k 1.5× 368 1.3× 353 1.4× 137 4.4k
X.W. Fan China 40 4.1k 1.3× 2.6k 1.2× 2.2k 1.5× 381 1.3× 487 1.9× 125 4.6k
E. Guziewicz Poland 30 2.5k 0.8× 1.8k 0.9× 956 0.7× 404 1.4× 237 0.9× 190 3.1k
T. Steiner United States 12 2.1k 0.6× 1.2k 0.6× 953 0.7× 206 0.7× 198 0.8× 27 2.3k
Е. М. Кайдашев Russia 17 2.6k 0.8× 1.6k 0.8× 1.1k 0.8× 164 0.6× 486 1.9× 66 3.0k
H. Alves Germany 19 3.1k 1.0× 1.8k 0.8× 1.7k 1.2× 329 1.1× 172 0.7× 39 3.3k
Y. Segawa Japan 18 3.3k 1.0× 1.8k 0.8× 1.7k 1.2× 407 1.4× 213 0.8× 31 3.5k
B. Claflin United States 21 1.7k 0.5× 1.5k 0.7× 961 0.7× 399 1.4× 159 0.6× 86 2.3k
Zhuxi Fu China 22 3.0k 0.9× 1.9k 0.9× 1.6k 1.1× 171 0.6× 233 0.9× 48 3.3k

Countries citing papers authored by K. Ip

Since Specialization
Citations

This map shows the geographic impact of K. Ip's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Ip with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Ip more than expected).

Fields of papers citing papers by K. Ip

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Ip. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Ip. The network helps show where K. Ip may publish in the future.

Co-authorship network of co-authors of K. Ip

This figure shows the co-authorship network connecting the top 25 collaborators of K. Ip. A scholar is included among the top collaborators of K. Ip based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Ip. K. Ip is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ip, K., et al.. (2013). Ka-Band High Power GaN SPDT Switch MMIC. 20 indexed citations
2.
Li, Ying, D. P. Norton, K. Ip, et al.. (2005). Low-resistance ohmic contacts to p-ZnMgO grown by pulsed-laser deposition. Applied Physics Letters. 86(19). 22 indexed citations
3.
Ip, K., Yuanjie Li, D. P. Norton, S. J. Pearton, & F. Ren. (2005). Low-resistance Au and Au∕Ni∕Au Ohmic contacts to p-ZnMgO. Applied Physics Letters. 87(7). 4 indexed citations
4.
Kim, Suku, B. S. Kang, F. Ren, et al.. (2004). Characteristics of Thin-Film p-ZnMgO/n-ITO Heterojunctions on Glass Substrates. Electrochemical and Solid-State Letters. 7(7). G145–G145. 4 indexed citations
5.
Kim, Suku, B. S. Kang, F. Ren, et al.. (2004). Contacts to p-type ZnMgO. Applied Physics Letters. 84(11). 1904–1906. 38 indexed citations
6.
Ip, K., Young-Woo Heo, Kwang Hyeon Baik, et al.. (2004). Carrier concentration dependence of Ti/Al/Pt/Au contact resistance on n-type ZnO. Applied Physics Letters. 84(4). 544–546. 65 indexed citations
7.
Lopatiuk, O., Leonid Chernyak, K. Ip, et al.. (2004). Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus. Applied Physics Letters. 86(1). 36 indexed citations
8.
Ip, K., Young-Woo Heo, D. P. Norton, et al.. (2004). Zn 0.9 Mg 0.1 O ∕ ZnO p – n junctions grown by pulsed-laser deposition. Applied Physics Letters. 85(7). 1169–1171. 77 indexed citations
9.
Ip, K., F. Ren, A. H. Onstine, et al.. (2004). Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning. Applied Physics Letters. 84(25). 5133–5135. 57 indexed citations
10.
Ip, K., R. M. Frazier, Young-Woo Heo, et al.. (2004). Ferromagnetism in Mn- and Co-implanted ZnO nanorods. 2. 16–19. 3 indexed citations
11.
Ip, K., Kwang Hyeon Baik, F. Ren, et al.. (2003). Stability of SiC Schottky Rectifiers to Rapid Thermal Annealing. Journal of The Electrochemical Society. 150(5). G293–G293. 5 indexed citations
12.
Heo, Young-Woo, et al.. (2003). Shallow donor formation in phosphorus-doped ZnO thin films. Applied Physics A. 78(1). 53–57. 46 indexed citations
13.
Ip, K., Kwang Hyeon Baik, Young-Woo Heo, et al.. (2003). Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(6). 2378–2381. 20 indexed citations
14.
Polyakov, A. Y., N. B. Smirnov, Е. А. Кожухова, et al.. (2003). Electrical characteristics of Au and Ag Schottky contacts on n-ZnO. Applied Physics Letters. 83(8). 1575–1577. 167 indexed citations
15.
Heo, Young-Woo, et al.. (2003). Transport properties of phosphorus-doped ZnO thin films. Applied Physics Letters. 83(6). 1128–1130. 130 indexed citations
16.
Polyakov, A. Y., N. B. Smirnov, Е. А. Кожухова, et al.. (2003). Properties of Au and Ag Schottky diodes prepared on undoped n-ZnO. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 21(5). 1603–1608. 22 indexed citations
17.
Ip, K., Kwang Hyeon Baik, Gil Yong Chung, et al.. (2002). Effects of Ar inductively coupled plasma exposure on 4H-SiC Schottky rectifiers. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(6). 2299–2302. 2 indexed citations
18.
Ip, K., et al.. (2002). High current bulk GaN Schottky rectifiers. Solid-State Electronics. 46(12). 2169–2172. 22 indexed citations
19.
Ip, K., James W. Johnson, S. N. G. Chu, et al.. (2001). Wet Chemical Etching of LiGaO[sub 2] and LiAlO[sub 2]. Electrochemical and Solid-State Letters. 4(6). C35–C35. 5 indexed citations
20.
Dang, G., H. Cho, K. Ip, et al.. (2001). Comparison of Dry and Wet Etch Processes for Patterning SiO[sub 2]/TiO[sub 2] Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers. Journal of The Electrochemical Society. 148(2). G25–G25. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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