T. N. Fogarty

420 total citations
21 papers, 371 citations indexed

About

T. N. Fogarty is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Condensed Matter Physics. According to data from OpenAlex, T. N. Fogarty has authored 21 papers receiving a total of 371 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 8 papers in Electronic, Optical and Magnetic Materials and 7 papers in Condensed Matter Physics. Recurrent topics in T. N. Fogarty's work include Ga2O3 and related materials (8 papers), Semiconductor materials and devices (8 papers) and GaN-based semiconductor devices and materials (7 papers). T. N. Fogarty is often cited by papers focused on Ga2O3 and related materials (8 papers), Semiconductor materials and devices (8 papers) and GaN-based semiconductor devices and materials (7 papers). T. N. Fogarty collaborates with scholars based in United States, Australia and Germany. T. N. Fogarty's co-authors include R. Wilkins, K. K. Allums, F. Ren, R. Dwivedi, S. J. Pearton, C. R. Abernathy, B. Luo, Albert G. Baca, J. W. Johnson and A. M. Dabiran and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment.

In The Last Decade

T. N. Fogarty

21 papers receiving 355 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. N. Fogarty United States 9 263 247 200 101 78 21 371
Y. Otoki Japan 6 244 0.9× 277 1.1× 147 0.7× 79 0.8× 83 1.1× 13 334
D. I. Merkurisov Russia 11 217 0.8× 296 1.2× 209 1.0× 82 0.8× 78 1.0× 24 361
R. Li United States 7 265 1.0× 307 1.2× 114 0.6× 68 0.7× 98 1.3× 12 362
Erdem Arkun United States 11 284 1.1× 279 1.1× 114 0.6× 77 0.8× 101 1.3× 27 370
Quentin Diduck United States 9 412 1.6× 328 1.3× 126 0.6× 100 1.0× 114 1.5× 31 490
U. K. Mishra United States 6 223 0.8× 325 1.3× 136 0.7× 127 1.3× 133 1.7× 15 388
G. Curatola Italy 13 552 2.1× 381 1.5× 156 0.8× 89 0.9× 126 1.6× 35 649
C. J. Merz United States 9 182 0.7× 199 0.8× 104 0.5× 141 1.4× 121 1.6× 13 332
S. Lavanga Italy 12 213 0.8× 301 1.2× 123 0.6× 121 1.2× 61 0.8× 37 389
Kazuhide Sumiyoshi Japan 5 205 0.8× 322 1.3× 167 0.8× 72 0.7× 125 1.6× 10 342

Countries citing papers authored by T. N. Fogarty

Since Specialization
Citations

This map shows the geographic impact of T. N. Fogarty's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. N. Fogarty with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. N. Fogarty more than expected).

Fields of papers citing papers by T. N. Fogarty

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. N. Fogarty. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. N. Fogarty. The network helps show where T. N. Fogarty may publish in the future.

Co-authorship network of co-authors of T. N. Fogarty

This figure shows the co-authorship network connecting the top 25 collaborators of T. N. Fogarty. A scholar is included among the top collaborators of T. N. Fogarty based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. N. Fogarty. T. N. Fogarty is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fogarty, T. N., et al.. (2020). Innovations In Pre College Outreach: Scouts Explorer Posts. Papers on Engineering Education Repository (American Society for Engineering Education). 8.708.1–8.708.4. 1 indexed citations
2.
Allums, K. K., Andrew Gerger, F. Ren, et al.. (2007). Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes. Journal of Electronic Materials. 36(4). 519–523. 8 indexed citations
3.
Khanna, Rohit, K. K. Allums, C. R. Abernathy, et al.. (2004). Effects of high-dose 40MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes. Applied Physics Letters. 85(15). 3131–3133. 31 indexed citations
4.
Luo, B., F. Ren, K. K. Allums, et al.. (2003). Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Solid-State Electronics. 47(6). 1015–1020. 28 indexed citations
5.
Luo, B., Jihyun Kim, F. Ren, et al.. (2003). Effect of High-Energy Proton Irradiation on DC Characteristics and Current Collapse in MgO and Sc[sub 2]O[sub 3] Passivated AlGaN/GaN HEMTs. Electrochemical and Solid-State Letters. 6(3). G31–G31. 16 indexed citations
6.
Luo, B., Jihyun Kim, F. Ren, et al.. (2003). Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 82(9). 1428–1430. 33 indexed citations
7.
Luo, B., J. W. Johnson, F. Ren, et al.. (2002). Effects of High Energy Proton Irradiation on DC Performance of GaAs Metal-Semiconductor Field Effect Transistors. Journal of The Electrochemical Society. 149(4). G236–G236. 2 indexed citations
8.
Kim, Jihyun, F. Ren, Gil Yong Chung, et al.. (2002). High energy proton irradiation effects on SiC Schottky rectifiers. Applied Physics Letters. 81(13). 2385–2387. 41 indexed citations
9.
Luo, B., J. W. Johnson, F. Ren, et al.. (2002). Proton and Gamma-Ray Irradiation Effects on InGaP/GaAs Heterojunction Bipolar Transistors. Journal of The Electrochemical Society. 149(4). G213–G213. 3 indexed citations
10.
Luo, B., J. W. Johnson, F. Ren, et al.. (2002). High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors. Journal of Electronic Materials. 31(5). 437–441. 48 indexed citations
11.
Lenahan, Patrick M., et al.. (2001). Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface. Applied Physics Letters. 79(20). 3266–3268. 7 indexed citations
12.
Kim, Myung‐Hee Y., John Wilson, L. Heilbronn, et al.. (2001). Radiation protection using Martian surface materials in human exploration of Mars.. PubMed. 17 Suppl 1. 81–3. 3 indexed citations
13.
Lenahan, Patrick M., et al.. (2001). Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process. IEEE Transactions on Nuclear Science. 48(6). 2131–2135. 21 indexed citations
14.
Luo, B., J. W. Johnson, F. Ren, et al.. (2001). dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 79(14). 2196–2198. 102 indexed citations
15.
Wilkins, R., W. P. Kirk, R. T. Bate, et al.. (1999). Ionization and displacement damage irradiation studies of quantum devices: resonant tunneling diodes and two-dimensional electron gas transistors. IEEE Transactions on Nuclear Science. 46(6). 1702–1707. 4 indexed citations
16.
Wilkins, R., et al.. (1999). Application of radiation sources to simulate the radiation environment in low earth orbit: results on optoelectronic devices for International Space Station. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 422(1-3). 591–594. 4 indexed citations
17.
Fogarty, T. N., et al.. (1998). Commercial devices in space-single event effects on Earth. 36th AIAA Aerospace Sciences Meeting and Exhibit. 1 indexed citations
18.
Kloesel, Kevin A., et al.. (1990). Single event upset and total dose radiation effects on rad-hard SRAMs. Journal of Electronic Materials. 19(7). 689–697. 1 indexed citations
19.
Yaney, D.S., T. N. Fogarty, R. Porter, David B. Fraser, & S. P. Murarka. (1980). Fabrication of a 64K dynamic MOS RAM with tantalum silicide replacing polysilicon. 844–844. 1 indexed citations
20.
Fogarty, T. N., David B. Fraser, & Valentine Wn. (1978). Abstract: MOS metallization via automatic ’’S-Gun’’ planetary deposition system. Journal of Vacuum Science and Technology. 15(2). 178–178. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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