T. Nigam

1.9k citations

58 papers · 1.4k indexed · h-index 22

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Silicon Carbide Semiconductor Technologies
Hardware and Architecture top 10%

Papers in

Electrical and Electronic Engineering 58
- Semiconductor materials and devices 55
- Advancements in Semiconductor Devices and Circuit Design 49
- Integrated Circuits and Semiconductor Failure Analysis 27
- Silicon Carbide Semiconductor Technologies 9
- Ferroelectric and Negative Capacitance Devices 7
- Electrostatic Discharge in Electronics 3
Hardware and Architecture 2

Co-authors: Marc Heyns A. Kerber Michel Depas G. Groeseneken R. Degraeve Paul Mertens Michel Houssa M. M. Heyns
Journals: Microelectronic Engineering (3 papers)Solid-State Electronics (3 papers)IEEE Transactions on Electron Devices (2 papers)IEEE Transactions on Device and Materials Reliability (1 paper)Applied Physics Letters (1 paper)
Partner nations: United States Belgium Germany

In The Last Decade

T. Nigam

55 papers receiving 1.3k citations

Peers

Countries citing papers authored by T. Nigam

Since Specialization

Citations

This map shows the geographic impact of T. Nigam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Nigam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Nigam more than expected).

Fields of papers citing papers by T. Nigam

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Nigam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Nigam. The network helps show where T. Nigam may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T. Nigam, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Nigam Line = papers co-authored together T. Nigam links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Optimized LDMOS Offering for Power Management and RF Applications S. Cimino, Ivelize Sánchez, J. Johnson, Huub B W Gort, Alex Burri, 積雄山森, P. Srinivasan, Р М Валеев, Jeovane Lopes de Freitas, de Ph. Jong, Jin Wei-bin, O. Bhavya, John Teare, T. Nigam, 管鑫	2022	0
2	Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area M. Toledano-Luque, Verena Walschaerts, Yong Sun, Nisha Jangra, John Teare, Mizuki Yamada, LI Zhao-wen, T. Nigam	2021	8
3	A Novel HCI Reliability Model for RF/mmWave Applications in FDSOI Technology 炫童王, Mizuki Yamada, Cárcamo García, S. ABBERGER, Asia H. AI-Mashhdani, Ralf Kern, T. Nigam, LI Zhao-wen	2020	10
4	Self-Heating Effects on Hot Carrier Degradation and its Impact on Ring-Oscillator Reliability Verena Walschaerts, Z. Chbili, A. Kerber, T. Nigam, Thayanne Gabrielly Ribeiro De Souza, Jin Wei-bin, Oky Syahputra, S. Cimino, D. Misra	2018	4
5	Bias temperature instability in scaled CMOS technologies: A circuit perspective Microelectronics Reliability ·A. Kerber, T. Nigam	2018	13
6	Device reliability metric for end-of-life performance optimization based on circuit level assessment A. Kerber, P. Srinivasan, S. Cimino, Verena Walschaerts, Skinner Patricia, Z. Chbili, Suresh Uppal, Rakesh Ranjan, Parthanarayan Hajra, Thayanne Gabrielly Ribeiro De Souza, Oky Syahputra, J. Johnson, F Guarin, T. Nigam, Margit Bartfeld-Feller	2017	25
7	Reliability-performance trade-off for work-function optimization in advanced node replacement metal gate technology Rakesh Ranjan, T. Nigam, Margit Bartfeld-Feller, O. Bhavya, M. Pusch	2016	8
8	HTOL SRAM Vmin shift considerations in scaled HKMG technologies Sriram Balasubramanian, Vivek Joshi, R. Bullens, R. Mann, 他谷康, L. McMillan, C. Weintraub, Gerhard Kurz, Gerhard Krause, A. Kerber, Margit Bartfeld-Feller, T. Nigam	2014	3
9	CMOS reliability: From discrete device degradation to circuit aging T. Nigam	2013	0
10	Accurate model for time-dependent dielectric breakdown of high-k metal gate stacks T. Nigam, A. Kerber, Peter Peumans	2009	95
11	TDDB failure distribution of metal gate/high-k CMOS devices on SOI substrates A. Kerber, E. Cartier, B.P. Linder, Siddarth Krishnan, T. Nigam	2009	35
12	Accurate product lifetime predictions based on device-level measurements T. Nigam, Margit Bartfeld-Feller, Sabine Fahl	2009	28
13	SRAM Variability and Supply Voltage Scaling Challenges R. Kapre, Tsuneyoshi OGISO, H. Puchner, Pedro Fraiha, T. Nigam, Latifa OKHAYA, M.V. Ramana Reddy, S. Lakshminarayanan, Ms. Aurobi Das -, R.B. Jr. Mailhot	2007	21
14	High power silicon RF LDMOSFET technology for 2.1 GHz power amplifier applications IEE Proceedings - Circuits Devices and Systems ·Sheng Xu, F. A. Baiocchi, H. Safar, James A. Lott, AES Cucinelli, Zhicheng Xie, T. Nigam, B.E. Jones, Bruce Thompson, J. Hanika, P. L. Gammel	2004	15
15	A fast and simple methodology for lifetime prediction of ultra-thin oxides T. Nigam, R. Degraeve, G. Groeseneken, Marc Heyns, H.E. Maes	2003	24
16	The Application of Solid Source Diffusion in the Vertical Replacement-Gate (VRG) MOSFET MRS Proceedings ·Sang‐Hyun Oh, J. M. Hergenrother, Don Monroe, T. Nigam, F. Klemens, A. Kornblit, W Mansfield, F.H. Baumann, H.‐J. Gossmann, Justyna Żychlińska, R. N. Kleiman, Silvana Guccione, Gary R. Weber, C.S. Rafferty	2000	1
17	Reliability of Ultra-thin Oxides for the Giga-bit generations European Solid-State Device Research Conference ·G. Groeseneken, R. Degraeve, T. Nigam, B. Kaczer, H.E. Maes	1999	5
18	The effect of elevated temperature on the reliability of very thin oxide films European Solid-State Device Research Conference ·B. Kaczer, R. Degraeve, イヨンジョン, T. Nigam, G. Groeseneken	1999	8
19	Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability R. Degraeve, イヨンジョン, B. Kaczer, T. Nigam, G. Groeseneken, A. Naem	1999	49
20	Constant current charge-to-breakdown: Still a valid tool to study the reliability of MOS structures? T. Nigam, R. Degraeve, G. Groeseneken, Marc Heyns, H.E. Maes	1998	66

About T. Nigam

T. Nigam is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Materials Chemistry, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 58 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (49 papers), Integrated Circuits and Semiconductor Failure Analysis (27 papers), Silicon Carbide Semiconductor Technologies (9 papers), Ferroelectric and Negative Capacitance Devices (7 papers), Electronic and Structural Properties of Oxides (5 papers), Electrostatic Discharge in Electronics (3 papers) and Thermal properties of materials (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.3k citations), Hardware and Architecture (36 citations), Electronic, Optical and Magnetic Materials (85 citations), Materials Chemistry (191 citations) and Condensed Matter Physics (33 citations). T. Nigam has collaborated with scholars based in United States, Belgium and Germany. Frequent co-authors include Marc Heyns, A. Kerber, Michel Depas, G. Groeseneken, R. Degraeve, Paul Mertens, Michel Houssa, M. M. Heyns, H.E. Maes and Peter Peumans. Their work appears in journals such as Microelectronic Engineering, Solid-State Electronics, IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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