Paolo Pavan

5.8k total citations · 1 hit paper
217 papers, 3.9k citations indexed

About

Paolo Pavan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanical Engineering. According to data from OpenAlex, Paolo Pavan has authored 217 papers receiving a total of 3.9k indexed citations (citations by other indexed papers that have themselves been cited), including 193 papers in Electrical and Electronic Engineering, 27 papers in Materials Chemistry and 18 papers in Mechanical Engineering. Recurrent topics in Paolo Pavan's work include Semiconductor materials and devices (141 papers), Advanced Memory and Neural Computing (85 papers) and Advancements in Semiconductor Devices and Circuit Design (71 papers). Paolo Pavan is often cited by papers focused on Semiconductor materials and devices (141 papers), Advanced Memory and Neural Computing (85 papers) and Advancements in Semiconductor Devices and Circuit Design (71 papers). Paolo Pavan collaborates with scholars based in Italy, United States and Germany. Paolo Pavan's co-authors include Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, Enrico Zanoni, P. Olivo, R. Bez, B. Eitan, I. Bloom, G. Bersuker and Nicolò Zagni and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Paolo Pavan

210 papers receiving 3.8k citations

Hit Papers

Flash memory cells-an overview 1997 2026 2006 2016 1997 100 200 300 400 500
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Flash memory cells-an overview
    1997 517 citations Paolo Pavan, Enrico Zanoni et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Paolo Pavan Italy 29 3.5k 682 276 273 267 217 3.9k
Lan Wei Canada 24 1.7k 0.5× 394 0.6× 146 0.5× 344 1.3× 243 0.9× 95 2.1k
Kai Ni United States 39 4.9k 1.4× 1.7k 2.5× 221 0.8× 137 0.5× 290 1.1× 258 6.0k
Luca Larcher Italy 43 6.6k 1.9× 2.0k 2.9× 280 1.0× 220 0.8× 481 1.8× 269 7.1k
Ya‐Chin King Taiwan 26 3.1k 0.9× 516 0.8× 210 0.8× 153 0.6× 257 1.0× 230 3.3k
E. Nowak France 34 5.5k 1.6× 922 1.4× 465 1.7× 158 0.6× 658 2.5× 176 5.8k
Mitsumasa Koyanagi Japan 31 4.1k 1.2× 312 0.5× 376 1.4× 140 0.5× 838 3.1× 379 4.4k
Edwin C. Kan United States 29 2.5k 0.7× 910 1.3× 446 1.6× 209 0.8× 966 3.6× 180 3.6k
Vijay Narayanan United States 39 5.4k 1.5× 1.6k 2.3× 842 3.1× 418 1.5× 653 2.4× 232 6.3k
Gouri Sankar Kar Belgium 34 3.8k 1.1× 1.5k 2.2× 1.4k 5.0× 130 0.5× 259 1.0× 315 4.6k
Yue Zhang China 35 2.9k 0.8× 1.4k 2.1× 1.8k 6.5× 183 0.7× 406 1.5× 229 4.6k

Countries citing papers authored by Paolo Pavan

Since Specialization
Citations

This map shows the geographic impact of Paolo Pavan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Paolo Pavan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Paolo Pavan more than expected).

Fields of papers citing papers by Paolo Pavan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Paolo Pavan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Paolo Pavan. The network helps show where Paolo Pavan may publish in the future.

Co-authorship network of co-authors of Paolo Pavan

This figure shows the co-authorship network connecting the top 25 collaborators of Paolo Pavan. A scholar is included among the top collaborators of Paolo Pavan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Paolo Pavan. Paolo Pavan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zagni, Nicolò, G. Verzellesi, Carlo De Santi, et al.. (2024). Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs. IEEE Transactions on Power Electronics. 39(11). 14295–14303. 2 indexed citations
2.
Zagni, Nicolò, G. Verzellesi, Carlo De Santi, et al.. (2024). Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD. Journal of Semiconductors. 45(3). 32501–32501. 7 indexed citations
3.
Meneghini, Matteo, Nicolò Zagni, Matteo Buffolo, et al.. (2024). Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC. SPIRE - Sciences Po Institutional REpository. 1–4. 1 indexed citations
4.
Zagni, Nicolò, G. Verzellesi, Carlo De Santi, et al.. (2023). Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors. IEEE Transactions on Electron Devices. 71(3). 1561–1566. 8 indexed citations
5.
Zanotti, Tommaso, et al.. (2023). Ultra-low power logic in memory with commercial grade memristors and FPGA-based smart-IMPLY architecture. Microelectronic Engineering. 280. 112062–112062. 5 indexed citations
6.
Ranjan, Alok, Francesco Maria Puglisi, Joel Molina‐Reyes, et al.. (2022). Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO2 Using Defect Nanospectroscopy. ACS Applied Electronic Materials. 4(8). 3909–3921. 6 indexed citations
7.
Pavan, Paolo, et al.. (2022). The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena. IRIS UNIMORE (University of Modena and Reggio Emilia). 1–6. 8 indexed citations
8.
Zagni, Nicolò, Alessandro Chini, Francesco Maria Puglisi, et al.. (2021). “Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs. IEEE Transactions on Electron Devices. 68(2). 697–703. 53 indexed citations
9.
Cioni, Marcello, Alessandro Bertacchini, Nicolò Zagni, et al.. (2021). Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs. Electronics. 10(4). 441–441. 13 indexed citations
10.
Zagni, Nicolò, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, & G. Verzellesi. (2021). On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs. Micromachines. 12(6). 709–709. 13 indexed citations
11.
Zagni, Nicolò, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, & G. Verzellesi. (2020). The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs. Journal of Computational Electronics. 19(4). 1555–1563. 16 indexed citations
12.
Zagni, Nicolò, Alessandro Chini, Francesco Maria Puglisi, et al.. (2020). Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs. IRIS UNIMORE (University of Modena and Reggio Emilia). 1–5. 12 indexed citations
13.
Ranjan, Alok, Nagarajan Raghavan, Francesco Maria Puglisi, et al.. (2019). Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics. IEEE Electron Device Letters. 40(8). 1321–1324. 20 indexed citations
14.
Puglisi, Francesco Maria, Nicolò Zagni, Luca Larcher, & Paolo Pavan. (2018). Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design. IEEE Transactions on Electron Devices. 65(7). 2964–2972. 58 indexed citations
15.
Larcher, Luca, Andrea Padovani, Francesco Maria Puglisi, & Paolo Pavan. (2018). Extracting Atomic Defect Properties From Leakage Current Temperature Dependence. IEEE Transactions on Electron Devices. 65(12). 5475–5480. 21 indexed citations
16.
Ranjan, Alok, Francesco Maria Puglisi, Nagarajan Raghavan, et al.. (2018). Random telegraph noise in 2D hexagonal boron nitride dielectric films. Applied Physics Letters. 112(13). 22 indexed citations
17.
Puglisi, Francesco Maria, Alok Ranjan, Nagarajan Raghavan, et al.. (2017). Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations. Journal of Applied Physics. 122(2). 6 indexed citations
18.
Raghavan, Nagarajan, Francesco Maria Puglisi, S. J. O’Shea, et al.. (2016). Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy. Journal of Applied Physics. 119(8). 16 indexed citations
19.
Zanoni, Enrico, Alessandra Fabbro, L. Vendrame, et al.. (1994). A Physics-Based, Accurate Spice Model of Impact-Ionization Effects in Bipolar Transistors. IRIS UNIMORE (University of Modena and Reggio Emilia). 181–184. 4 indexed citations
20.
Verzellesi, G., et al.. (1993). A Compact Method for Measuring Parasitic Resistances in Bipolar Transistors. IRIS UNIMORE (University of Modena and Reggio Emilia). 433–436. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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