S. Arulkumaran

4.0k citations

137 papers · 3.3k indexed · h-index 33

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 124
- GaN-based semiconductor devices and materials 124
Electronic, Optical and Magnetic Materials 59
- Ga2O3 and related materials 59

Co-authors: Geok Ing Ng Takashi Egawa Hiroyasu Ishikawa T. Jimbo S. Vicknesh Y. K. T. Maung Kumud Ranjan Yuichi Sano
Journals: Applied Physics Letters (28 papers)Applied Physics Express (13 papers)Japanese Journal of Applied Physics (12 papers)IEEE Electron Device Letters (7 papers)physica status solidi (a) (6 papers)
Partner nations: Singapore Japan India

In The Last Decade

S. Arulkumaran

133 papers receiving 3.2k citations

Peers

Countries citing papers authored by S. Arulkumaran

Since Specialization

Citations

This map shows the geographic impact of S. Arulkumaran's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Arulkumaran with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Arulkumaran more than expected).

Fields of papers citing papers by S. Arulkumaran

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Arulkumaran. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Arulkumaran. The network helps show where S. Arulkumaran may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Arulkumaran, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Arulkumaran Line = papers co-authored together S. Arulkumaran links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures Applied Physics Letters ·С. А. Иванов, S. Arulkumaran, Francesco La Tona, Geok Ing Ng	2025	0
2	First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding physica status solidi (a) ·Salma Coello-Juárez, Francesco La Tona, Yue Wang, Yulia Lekina, Kumud Ranjan, Arumabaduge Harshini Niranjali Fernando, 金英红, Kenneth E. Lee, S. Arulkumaran, Geok Ing Ng	2024	0
3	Change of chemical bonding properties at SiNx/GaN/AlGaN interface with SiH4 flow rate and its impact on the carrier transport properties of MIS-diodes Materials Science and Engineering B ·С. А. Иванов, S. Arulkumaran, Dinesh Mani, Salma Coello-Juárez, Francesco La Tona, Faiza Manji, Geok Ing Ng	2024	3
4	Multi-channel AlN/GaN Schottky barrier diodes Applied Physics Express ·Salma Coello-Juárez, Faiza Manji, Qingyun Xie, Francesco La Tona, Hui Teng Tan, С. А. Иванов, Siyu Liu, Kumud Ranjan, Jens H. Hjelmstad, S. Arulkumaran, Chee Lip Gan, Geok Ing Ng	2024	1
5	Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs Applied Surface Science ·С. А. Иванов, Salma Coello-Juárez, S. Arulkumaran, Geok Ing Ng	2024	2
6	Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress Microelectronics Reliability ·A. L. Norbis, Yu Gao, 任宗明, Wardhana Aji Sasangka, Jens H. Hjelmstad, Sriyanto Sriyanto, S. Arulkumaran, Geok Ing Ng, Carl V. Thompson, Chee Lip Gan	2023	1
7	Non-linear thermal resistance model for the simulation of high power GaN-based devices Semiconductor Science and Technology ·А.О. Надточій, I. Íñiguez-de-la-Torre, S. Pérez, Kumud Ranjan, Michaelis Pazianas, 郎敏, 理恵石井, K. Radhakrishnan, S. Arulkumaran, Geok Ing Ng, T. González, J. Mateos	2021	10
8	Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate Electronics ·Kari Abspoel, S. Arulkumaran, Y. Dikme, 요시다 아쯔노리, Geok Ing Ng	2020	8
9	Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors Micromachines ·요시다 아쯔노리, S. Arulkumaran, Geok Ing Ng, Shugo Nitta, J. Kennedy, Hiroshi Amano	2020	21
10	Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency Sensors ·요시다 아쯔노리, S. Arulkumaran, Kumud Ranjan, Geok Ing Ng, Peter P. Murmu, J. Kennedy, Shugo Nitta, Yoshio Honda, Manato Deki, Hiroshi Amano	2019	10
11	GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates AIP Advances ·요시다 아쯔노리, S. Arulkumaran, Geok Ing Ng, Kumud Ranjan, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano	2019	13
12	Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer Japanese Journal of Applied Physics ·N Nakamura, S. Arulkumaran, Geok Ing Ng, Kumud Ranjan, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano	2019	8
13	Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation Kumud Ranjan, Geok Ing Ng, S. Arulkumaran, S. Vicknesh, S. C. Foo	2019	3
14	Study on the Temperature Dependence of the Microwave-Noise Characteristics in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Zhihong Liu, Geok Ing Ng, S. Arulkumaran	2010	7
15	Temperature-dependent microwave noise characteristics of AlGaN/GaN HEMTs on silicon substrate Wissam M Elfallal, S. Arulkumaran, Geok Ing Ng, Tingting Xu	2008	1
16	Surface passivation effects in AlGaN/GaN HEMTs on high-resistivity Si substrate S. Arulkumaran	2007	6
17	High temperature power performance of AlGaN∕GaN high-electron-mobility transistors on high-resistivity silicon Applied Physics Letters ·S. Arulkumaran, Geok Ing Ng, Hitesh Vaishnav, Tugçe Bozkurt	2007	30
18	Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate Thin Solid Films ·S. Arulkumaran, Zixin Liu, Geok Ing Ng, Wai Chye Cheong, Ruosheng Zeng, J. Bu, H. Wang, K. Radhakrishnan, Y.Z. Saakyan	2006	56
19	Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors Applied Physics Letters ·S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa, T. Jimbo	2003	81
20	Improved electrical properties on the anodic oxide/InP interface for MOS structures Journal of Electronic Materials ·糸井達典, N. Dharmarasu, S. Arulkumaran, P. Jayavel, J. Kumar	1998	5

About S. Arulkumaran

S. Arulkumaran is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 137 papers that have together received 3.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (124 papers), Semiconductor materials and devices (83 papers), Ga2O3 and related materials (59 papers), Semiconductor Quantum Structures and Devices (23 papers), Silicon Carbide Semiconductor Technologies (22 papers), ZnO doping and properties (18 papers), Radio Frequency Integrated Circuit Design (17 papers) and Semiconductor materials and interfaces (14 papers). The work is most often cited by research in Condensed Matter Physics (3.0k citations), Electronic, Optical and Magnetic Materials (1.5k citations), Electrical and Electronic Engineering (2.4k citations), Atomic and Molecular Physics, and Optics (735 citations) and Materials Chemistry (749 citations). S. Arulkumaran has collaborated with scholars based in Singapore, Japan and India. Frequent co-authors include Geok Ing Ng, Takashi Egawa, Hiroyasu Ishikawa, T. Jimbo, S. Vicknesh, Y. K. T. Maung, Kumud Ranjan, Yuichi Sano, M. Umeno and S. C. Foo. Their work appears in journals such as Applied Physics Letters, Applied Physics Express, Japanese Journal of Applied Physics, IEEE Electron Device Letters and physica status solidi (a).

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