Oleg Laboutin

962 total citations
51 papers, 811 citations indexed

About

Oleg Laboutin is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Oleg Laboutin has authored 51 papers receiving a total of 811 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Condensed Matter Physics, 34 papers in Electrical and Electronic Engineering and 28 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Oleg Laboutin's work include GaN-based semiconductor devices and materials (47 papers), Ga2O3 and related materials (27 papers) and Semiconductor materials and devices (24 papers). Oleg Laboutin is often cited by papers focused on GaN-based semiconductor devices and materials (47 papers), Ga2O3 and related materials (27 papers) and Semiconductor materials and devices (24 papers). Oleg Laboutin collaborates with scholars based in United States, South Korea and United Kingdom. Oleg Laboutin's co-authors include Yu Cao, Wayne Johnson, J. W. Johnson, Huili Grace Xing, Patrick Fay, Guowang Li, Ronghua Wang, Gregory L. Snider, F. Ren and S. J. Pearton and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Crystal Growth.

In The Last Decade

Oleg Laboutin

49 papers receiving 765 citations

Peers

Countries citing papers authored by Oleg Laboutin

Since Specialization

Citations

This map shows the geographic impact of Oleg Laboutin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Oleg Laboutin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Oleg Laboutin more than expected).

Fields of papers citing papers by Oleg Laboutin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Oleg Laboutin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Oleg Laboutin. The network helps show where Oleg Laboutin may publish in the future.

Co-authorship network of co-authors of Oleg Laboutin

This figure shows the co-authorship network connecting the top 25 collaborators of Oleg Laboutin. A scholar is included among the top collaborators of Oleg Laboutin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Oleg Laboutin. Oleg Laboutin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors 2018 ·ECS Journal of Solid State Science and Technology ·A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov, Jiancheng Yang, F. Ren, Chien-Fong Lo, Oleg Laboutin, J. W. Johnson, S. J. Pearton	9
2	Thermal Effects between Carbon-Doped GaN and AlGaN Back-Barrier in AlGaN/GaN HEMTs on Si (111) Substrates 2017 ·ECS Journal of Solid State Science and Technology ·Chien-Fong Lo, (unknown), Oleg Laboutin, H. Marchand, (unknown), Wayne Johnson	2
3	GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes 2016 ·Materials Science in Semiconductor Processing ·(unknown), (unknown), (unknown), Oleg Laboutin, Roger E. Welser, L. J. Guido	5
4	(Invited) GaN HEMT Fabrication in a 200mm Si Foundry Environment: The Time Has Come 2014 ·ECS Transactions ·J. R. LaRoche, (unknown), (unknown), W. E. Hoke, Yu Cao, (unknown), (unknown), G. Gebara, T. A. Kennedy, (unknown), Oleg Laboutin, C. Y. Fong, (unknown), Wayne Johnson, T.E. Kazior, Jonathan P. Comeau	1
5	(Invited) Development of 4 Inch and 6 Inch GaN-on-Si for High-Voltage Operation 2014 ·ECS Transactions ·C. F. Lo, Oleg Laboutin, (unknown), Kevin O’Connor, (unknown), (unknown)	2
6	Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam 2014 ·Applied Physics Letters ·Akira Uedono, Tatsuya Fujishima, Yu Cao, Yang Zhang, (unknown), Shoji Ishibashi, Masatomo Sumiya, Oleg Laboutin, Wayne Johnson, Tomás Palacios	18
7	Device Delay in GaN Transistors Under High Drain Bias Conditions 2013 ·IEEE Electron Device Letters ·Dong Seup Lee, Oleg Laboutin, Yu Cao, J. W. Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, Tomás Palacios	4
8	Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions 2013 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·(unknown), Lu Liu, F. Ren, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Е. А. Кожухова, N. G. Kolin, V. M. Boĭko, (unknown), (unknown), Chien-Fong Lo, Oleg Laboutin, Yu Cao, J. W. Johnson, (unknown), (unknown), S. J. Pearton	25
9	High linearity nanowire channel GaN HEMTs 2013 ·Dong Seup Lee, Han Wang, Allen Hsu, M. Azize, Oleg Laboutin, Yu Cao, Wayne Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, Tomás Palacios	1
10	Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation 2013 ·Ronghua Wang, (unknown), Jia Guo, Bo Song, Jai Verma, Zongyang Hu, Yuanzheng Yue, Kazuki Nomoto, Satyaki Ganguly, Sergei Rouvimov, Xiaoqin Gao, Oleg Laboutin, Yu Cao, Wayne Johnson, Patrick Fay, Debdeep Jena, Huili Grace Xing	9
11	Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability 2012 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Lu Liu, Chien-Fong Lo, Yuyin Xi, F. Ren, S. J. Pearton, Oleg Laboutin, Yu Cao, J. W. Johnson, Ivan I. Kravchenko	13
12	Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors 2012 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Chien-Fong Lo, Lu Liu, F. Ren, S. J. Pearton, F. Ren, Hong-Yeol Kim, Jihyun Kim, Oleg Laboutin, Yu Cao, J. W. Johnson, Ivan I. Kravchenko	9
13	Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation 2012 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Chien-Fong Lo, Lu Liu, (unknown), F. Ren, Casey M. Schwarz, Elena Flitsiyan, Leonid Chernyak, Hong-Yeol Kim, Jihyun Kim, (unknown), Oleg Laboutin, Yu Cao, J. W. Johnson, S. J. Pearton	5
14	193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors 2012 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·(unknown), Chien-Fong Lo, Lu Liu, Camilo Vélez, F. Ren, S. J. Pearton, (unknown), Michael R. Johnson, Lin Zhou, David J. Smith, Jihyun Kim, Oleg Laboutin, Yu Cao, J. W. Johnson	5
15	Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization 2011 ·ECS Transactions ·Chien-Fong Lo, Lu Liu, (unknown), Ryan Davies, F. Ren, S. J. Pearton, Ivan I. Kravchenko, Oleg Laboutin, Yu Cao, Wayne Johnson, F. Ren	2
16	Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors 2011 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Chien-Fong Lo, Lu Liu, (unknown), F. Ren, Oleg Laboutin, Yu Cao, J. W. Johnson, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, (unknown), A. I. Belogorokhov, S. J. Pearton	14
17	210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation 2011 ·IEEE Electron Device Letters ·Ronghua Wang, Guowang Li, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory L. Snider, Patrick Fay, Debdeep Jena, Huili Grace Xing	87
18	Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures 2011 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·C. F. Lo, Lu Liu, (unknown), F. Ren, V. Crăciun, S. J. Pearton, Young-Woo Heo, Oleg Laboutin, J. W. Johnson	15
19	High-efficiency InN-based quantum dot solar cells for defense applications 2010 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Roger E. Welser, Ashok K. Sood, Yash R. Puri, Oleg Laboutin, L. J. Guido, Nibir K. Dhar, P. S. Wijewarnasuriya	1
20	Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications 2006 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Ashok K. Sood, R. Singh, Yash R. Puri, (unknown), Oleg Laboutin, P.M. DeLuca, (unknown), Jie Deng, James C. M. Hwang	0

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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