A. P. Zhang

767 total citations
12 papers, 674 citations indexed

About

A. P. Zhang is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, A. P. Zhang has authored 12 papers receiving a total of 674 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Condensed Matter Physics, 12 papers in Electrical and Electronic Engineering and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in A. P. Zhang's work include GaN-based semiconductor devices and materials (12 papers), Semiconductor materials and devices (9 papers) and Silicon Carbide Semiconductor Technologies (7 papers). A. P. Zhang is often cited by papers focused on GaN-based semiconductor devices and materials (12 papers), Semiconductor materials and devices (9 papers) and Silicon Carbide Semiconductor Technologies (7 papers). A. P. Zhang collaborates with scholars based in United States, Russia and Taiwan. A. P. Zhang's co-authors include F. Ren, S. J. Pearton, G. Dang, X. A. Cao, J. M. Van Hove, R. J. Shul, L. Zhang, R. Hickman, Jung Han and J. W. Johnson and has published in prestigious journals such as Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and Electrochemical and Solid-State Letters.

In The Last Decade

A. P. Zhang

12 papers receiving 662 citations

Peers

A. P. Zhang

CMP

EEE

EOMM

AMPO

MC

J. Sewell United States

R. Hickman United States

Dave Bour United States

W. Imler United States

A. S. Zubrilov Russia

A.P. Zhang United States

Cory Lund United States

B. Schineller Germany

M. Tordjman France

Takeshi Eri Japan

J. Sewell United States

A. P. Zhang

401 ×0.6

CMP

503 ×1.0

EEE

200 ×0.8

EOMM

134 ×0.7

AMPO

127 ×0.8

MC

Citations per year, relative to A. P. Zhang A. P. Zhang (= 1×) peers J. Sewell

Countries citing papers authored by A. P. Zhang

Since Specialization

Citations

This map shows the geographic impact of A. P. Zhang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. P. Zhang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. P. Zhang more than expected).

Fields of papers citing papers by A. P. Zhang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. P. Zhang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. P. Zhang. The network helps show where A. P. Zhang may publish in the future.

Co-authorship network of co-authors of A. P. Zhang

This figure shows the co-authorship network connecting the top 25 collaborators of A. P. Zhang. A scholar is included among the top collaborators of A. P. Zhang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. P. Zhang. A. P. Zhang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

1.

Zhang, A. P., Jung Han, F. Ren, et al.. (2001). GaN Bipolar Junction Transistors with Regrown Emitters. Electrochemical and Solid-State Letters. 4(5). G39–G39. 7 indexed citations

2.

Zhang, A. P., J. W. Johnson, B. Luo, et al.. (2001). Vertical and lateral GaN rectifiers on free-standing GaN substrates. Applied Physics Letters. 79(10). 1555–1557. 61 indexed citations

3.

Zhang, A. P., J. W. Johnson, F. Ren, et al.. (2001). Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage. Applied Physics Letters. 78(6). 823–825. 84 indexed citations

4.

Zhang, A. P., G. Dang, F. Ren, et al.. (2000). Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers. Applied Physics Letters. 76(13). 1767–1769. 43 indexed citations

5.

Zhang, A. P., G. Dang, F. Ren, et al.. (2000). Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers. Applied Physics Letters. 76(25). 3816–3818. 33 indexed citations

6.

Cao, X. A., A. P. Zhang, G. Dang, et al.. (2000). Schottky diode measurements of dry etch damage in n- and p-type GaN. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(4). 1144–1148. 41 indexed citations

7.

Zhang, A. P., G. Dang, F. Ren, et al.. (2000). Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors. Applied Physics Letters. 76(20). 2943–2945. 21 indexed citations

8.

Zhang, A. P., G. Dang, F. Ren, et al.. (2000). Plasma damage in p-GaN. Journal of Electronic Materials. 29(3). 256–261. 30 indexed citations

9.

Chyi, Jen‐Inn, Chang‐Cheng Chuo, Nils C. Gerhardt, et al.. (1999). Growth and Device Performance of GaN Schottky Rectifiers. MRS Internet Journal of Nitride Semiconductor Research. 4(1). 19 indexed citations

10.

Cao, X. A., S. J. Pearton, A. P. Zhang, et al.. (1999). Electrical effects of plasma damage in p-GaN. Applied Physics Letters. 75(17). 2569–2571. 184 indexed citations

11.

Han, Jung, Albert G. Baca, R. J. Shul, et al.. (1999). Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor. Applied Physics Letters. 74(18). 2702–2704. 71 indexed citations

12.

Cao, X. A., S. J. Pearton, G. Dang, et al.. (1999). Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN. Applied Physics Letters. 75(26). 4130–4132. 80 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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