A. P. Zhang

767 citations

12 papers · 674 indexed · h-index 11

Condensed Matter Physics top 2%
Electrical and Electronic Engineering top 10%
Electronic, Optical and Magnetic Materials top 10%
Atomic and Molecular Physics, and Optics top 10%
Materials Chemistry

Co-authors: F. Ren S. J. Pearton G. Dang X. A. Cao J. M. Van Hove R. J. Shul L. Zhang R. Hickman
Topics: GaN-based semiconductor devices and materials (12 papers)Semiconductor materials and devices (9 papers)Silicon Carbide Semiconductor Technologies (7 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Electrochemical and Solid-State Letters
Partner nations: United States Russia Taiwan

In The Last Decade

A. P. Zhang

12 papers receiving 662 citations

Peers

Countries citing papers authored by A. P. Zhang

Since Specialization

Citations

This map shows the geographic impact of A. P. Zhang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. P. Zhang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. P. Zhang more than expected).

Fields of papers citing papers by A. P. Zhang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. P. Zhang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. P. Zhang. The network helps show where A. P. Zhang may publish in the future.

Co-authorship network of co-authors of A. P. Zhang

This figure shows the co-authorship network connecting the top 25 collaborators of A. P. Zhang. A scholar is included among the top collaborators of A. P. Zhang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. P. Zhang. A. P. Zhang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

#	Work	Indexed citations
1	GaN Bipolar Junction Transistors with Regrown Emitters 2001 ·Electrochemical and Solid-State Letters ·A. P. Zhang,Jung Han,F. Ren,Karen Elizabeth Waldrip,C. R. Abernathy,B. Luo,G. Dang,J. W. Johnson,(unknown),S. J. Pearton	7
2	Vertical and lateral GaN rectifiers on free-standing GaN substrates 2001 ·Applied Physics Letters ·A. P. Zhang,J. W. Johnson,B. Luo,F. Ren,S. J. Pearton,(unknown),(unknown),Jen‐Inn Chyi	61
3	Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage 2001 ·Applied Physics Letters ·A. P. Zhang,J. W. Johnson,F. Ren,Jung Han,A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,Joan M. Redwing,(unknown),S. J. Pearton	84
4	Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers 2000 ·Applied Physics Letters ·A. P. Zhang,G. Dang,F. Ren,Jung Han,A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,Joan M. Redwing,X. A. Cao,S. J. Pearton	43
5	Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers 2000 ·Applied Physics Letters ·A. P. Zhang,G. Dang,F. Ren,Jung Han,A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,Joan M. Redwing,H. Cho,S. J. Pearton	33
6	Schottky diode measurements of dry etch damage in n- and p-type GaN 2000 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·X. A. Cao,A. P. Zhang,G. Dang,F. Ren,S. J. Pearton,R. J. Shul,L. Zhang	41
7	Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors 2000 ·Applied Physics Letters ·A. P. Zhang,G. Dang,F. Ren,Jung Han,Albert G. Baca,R. J. Shul,H. Cho,C. Monier,X. A. Cao,C. R. Abernathy,S. J. Pearton	21
8	Plasma damage in p-GaN 2000 ·Journal of Electronic Materials ·(unknown),A. P. Zhang,G. Dang,F. Ren,S. J. Pearton,J. M. Van Hove,R. Hickman,R. J. Shul,L. Zhang	30
9	Growth and Device Performance of GaN Schottky Rectifiers 1999 ·MRS Internet Journal of Nitride Semiconductor Research ·Jen‐Inn Chyi,(unknown),Chang‐Cheng Chuo,Nils C. Gerhardt,G. Dang,A. P. Zhang,F. Ren,X. A. Cao,S. J. Pearton,S. N. G. Chu,R. G. Wilson	19
10	Electrical effects of plasma damage in p-GaN 1999 ·Applied Physics Letters ·X. A. Cao,S. J. Pearton,A. P. Zhang,G. Dang,F. Ren,R. J. Shul,L. Zhang,R. Hickman,J. M. Van Hove	184
11	Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor 1999 ·Applied Physics Letters ·Jung Han,Albert G. Baca,R. J. Shul,C. G. Willison,L. Zhang,F. Ren,A. P. Zhang,G. Dang,S. M. Donovan,X. A. Cao,H. Cho,K. B. Jung,C. R. Abernathy,S. J. Pearton,R. G. Wilson	71
12	Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN 1999 ·Applied Physics Letters ·X. A. Cao,S. J. Pearton,G. Dang,A. P. Zhang,F. Ren,J. M. Van Hove	80

About A. P. Zhang

A. P. Zhang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 12 papers that have together received 674 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (12 papers), Semiconductor materials and devices (9 papers) and Silicon Carbide Semiconductor Technologies (7 papers). The work is most often cited by research in Condensed Matter Physics (620 citations), Electronic, Optical and Magnetic Materials (254 citations) and Electrical and Electronic Engineering (484 citations). A. P. Zhang has collaborated with scholars based in United States, Russia and Taiwan. Frequent co-authors include F. Ren, S. J. Pearton, G. Dang, X. A. Cao, J. M. Van Hove, R. J. Shul, L. Zhang, R. Hickman, Jung Han and J. W. Johnson. Their work appears in journals such as Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and Electrochemical and Solid-State Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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