David W. Greve
Impact in
- Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
-
- Ga2O3 and related materials
Papers in
-
- GaN-based semiconductor devices and materials 35
-
- Ultrasonics and Acoustic Wave Propagation 59
- Co-authors
- R. M. FeenstraIrving J. OppenheimArthur R. SmithMiltiadis K. HatalisJohn E. NorthrupJörg NeugebauerMarek SkowrońskiM. Shin
- Journals
- Journal of Applied Physics (16 papers)Applied Physics Letters (8 papers)MRS Internet Journal of Nitride Semiconductor Research (6 papers)IEEE Transactions on Electron Devices (6 papers)Journal of Electronic Materials (6 papers)
- Partner nations
- United StatesGermanyRussia
In The Last Decade
David W. Greve
202 papers receiving 4.6k citations
Peers
Comparison fields: 5 of 94
- Condensed Matter Physics 1.9k
- Electronic, Optical and Magnetic Materials 1.0k
- Mechanics of Materials 1.2k
- Electrical and Electronic Engineering 2.6k
- Bioengineering 215
Countries citing papers authored by David W. Greve
This map shows the geographic impact of David W. Greve's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by David W. Greve with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites David W. Greve more than expected).
Fields of papers citing papers by David W. Greve
This network shows the impact of papers produced by David W. Greve. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by David W. Greve. The network helps show where David W. Greve may publish in the future.
Co-authors
The 25 scholars most cited alongside David W. Greve, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2024 | 0 | |
| 2 | 2022 | 1 | |
| 3 | 2020 | 36 | |
| 4 | 2015 | 98 | |
| 5 | 2015 | 1 | |
| 6 | Identifying Pipe Degradation in a Highly Dynamic Environment Using Singular Value Decomposition | 2013 | 4 |
| 7 | 2012 | 14 | |
| 8 | 2011 | 19 | |
| 9 | 2010 | 1 | |
| 10 | Multiphysics Simulation of the Effect of Sensing and Spacer Layers on SAW Velocity | 2009 | 4 |
| 11 | 2007 | 8 | |
| 12 | 2006 | 1 | |
| 13 | 2004 | 18 | |
| 14 | 2003 | 19 | |
| 15 | 2003 | 36 | |
| 16 | 2002 | 4 | |
| 17 | Decomposition of B 2 H 6 on Ni(100) | 1997 | 2 |
| 18 | 1997 | 36 | |
| 19 | 1992 | 9 | |
| 20 | 1982 | 12 |
About David W. Greve
David W. Greve is a scholar working on Condensed Matter Physics, Mechanics of Materials, Bioengineering, Biomedical Engineering and Electrical and Electronic Engineering, having authored 208 papers that have together received 4.8k indexed citations. Recurring topics across this work include Acoustic Wave Resonator Technologies (59 papers), Ultrasonics and Acoustic Wave Propagation (59 papers), Semiconductor materials and devices (44 papers), GaN-based semiconductor devices and materials (35 papers), Non-Destructive Testing Techniques (28 papers), Thin-Film Transistor Technologies (20 papers), Advanced MEMS and NEMS Technologies (17 papers) and Silicon and Solar Cell Technologies (17 papers). The work is most often cited by research in Condensed Matter Physics (1.9k citations), Electronic, Optical and Magnetic Materials (1.0k citations), Mechanics of Materials (1.2k citations), Electrical and Electronic Engineering (2.6k citations) and Bioengineering (215 citations). David W. Greve has collaborated with scholars based in United States, Germany and Russia. Frequent co-authors include R. M. Feenstra, Irving J. Oppenheim, Arthur R. Smith, Miltiadis K. Hatalis, John E. Northrup, Jörg Neugebauer, Marek Skowroński, M. Shin, Paul R. Ohodnicki and Jagannath Devkota. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, MRS Internet Journal of Nitride Semiconductor Research, IEEE Transactions on Electron Devices and Journal of Electronic Materials.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.