N. M. Shmidt

495 total citations
53 papers, 431 citations indexed

About

N. M. Shmidt is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, N. M. Shmidt has authored 53 papers receiving a total of 431 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Condensed Matter Physics, 27 papers in Atomic and Molecular Physics, and Optics and 20 papers in Electrical and Electronic Engineering. Recurrent topics in N. M. Shmidt's work include GaN-based semiconductor devices and materials (40 papers), Semiconductor Quantum Structures and Devices (20 papers) and Ga2O3 and related materials (19 papers). N. M. Shmidt is often cited by papers focused on GaN-based semiconductor devices and materials (40 papers), Semiconductor Quantum Structures and Devices (20 papers) and Ga2O3 and related materials (19 papers). N. M. Shmidt collaborates with scholars based in Russia, United States and South Korea. N. M. Shmidt's co-authors include E. B. Yakimov, W. V. Lundin, A. S. Usikov, D. S. Poloskin, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, П. С. Вергелес, A. Usikov and B. Theys and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Physics Condensed Matter.

In The Last Decade

N. M. Shmidt

52 papers receiving 410 citations

Peers

N. M. Shmidt

CMP

EEE

EOMM

AMPO

D. I. Merkurisov Russia

V. M. Boĭko Russia

Tobias Meisch Germany

J.-Y. Duboz France

Juan A. Herbsommer United States

R. C. Tu Taiwan

K. W. West United States

Hiroya Kimura Japan

A. Fontserè Spain

Koji Uematsu Japan

D. I. Merkurisov Russia

N. M. Shmidt

296 ×0.9

CMP

217 ×0.9

EEE

209 ×1.1

EOMM

78 ×0.5

AMPO

82 ×0.9

Citations per year, relative to N. M. Shmidt N. M. Shmidt (= 1×) peers D. I. Merkurisov

Countries citing papers authored by N. M. Shmidt

Since Specialization

Citations

This map shows the geographic impact of N. M. Shmidt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. M. Shmidt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. M. Shmidt more than expected).

Fields of papers citing papers by N. M. Shmidt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. M. Shmidt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. M. Shmidt. The network helps show where N. M. Shmidt may publish in the future.

Co-authorship network of co-authors of N. M. Shmidt

This figure shows the co-authorship network connecting the top 25 collaborators of N. M. Shmidt. A scholar is included among the top collaborators of N. M. Shmidt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. M. Shmidt. N. M. Shmidt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Shmidt, N. M., et al.. (2024). Participation of Defects Localized at Heterointerfaces and Extended Defects in the Degradation of Nitride-Based Light-Emitting Devices. Optics and Spectroscopy. 132(2). 193–195. 1 indexed citations

Вергелес, П. С., N. M. Shmidt, & E. B. Yakimov. (2012). Influence of electron-beam irradiation in SEM on the cathodoluminescence and electron-beam-induced current in InGaN/GaN light-emitting diodes with a buried active region. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 6(6). 890–893. 5 indexed citations

Shmidt, N. M., et al.. (2011). Frequency and temperature dependences of capacitance-voltage characteristics of InGaN/GaN light-emitting structures with multiple quantum wells. Semiconductors. 45(2). 221–224. 6 indexed citations

Averkiev, N. S., et al.. (2009). Features of the recombination processes in InGaN/GaN based LEDs at high densities of injection current. Technical Physics Letters. 35(10). 922–924. 4 indexed citations

Ber, B. Ya., А. П. Васильев, А. Г. Колмаков, et al.. (2008). Surface monitoring of HEMT structures. Superlattices and Microstructures. 45(4-5). 332–336.

Shmidt, N. M., П. С. Вергелес, & E. B. Yakimov. (2007). EBIC characterization of light-emitting structures based on GaN. Semiconductors. 41(4). 491–494. 11 indexed citations

Ber, B. Ya., et al.. (2007). Comparative study of quantum efficiency of blue LED with different nanostructural arrangement. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(8). 2981–2985. 3 indexed citations

Emel’yanov, A. M., W. V. Lundin, V. N. Petrov, et al.. (2006). Correlation between luminescent properties and structure organization in AlGaN/GaN superlattices annealed after erbium ion implantation. Technical Physics. 51(12). 1600–1603. 1 indexed citations

Shmidt, N. M., et al.. (2005). SEM/EBIC investigations of extended defect system in GaN epilayers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(6). 1797–1801. 12 indexed citations

10.

Yakimov, E. B., et al.. (2003). Correlation of diffusion length and trap concentration with dislocation density in MOCVD-grown GaN. Physica B Condensed Matter. 340-342. 479–483. 5 indexed citations

11.

Shmidt, N. M., А. Г. Колмаков, W. V. Lundin, et al.. (2002). EBIC Characterization of III–Nitride Structures Using Multifractal Parameterization. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 457–460. 3 indexed citations

12.

Vlasenko, L. S., et al.. (2001). Surface gettering of background impurities and defects in GaAs wafers. Semiconductors. 35(2). 177–180. 5 indexed citations

13.

Emtsev, V. V., V. Yu. Davydov, E. E. Häller, et al.. (2001). Radiation-induced defects in n-type GaN and InN. Physica B Condensed Matter. 308-310. 58–61. 26 indexed citations

14.

Davydov, Denis, V. V. Emtsev, A. А. Lebedev, et al.. (2001). Electron Traps in Undoped GaN Layers Subjected to Gamma-Irradiation and Annealing. Materials science forum. 353-356. 799–802. 4 indexed citations

15.

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2001). Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire. Solid-State Electronics. 45(2). 255–259. 12 indexed citations

16.

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2000). Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 929–935. 4 indexed citations

17.

Shmidt, N. M., et al.. (1999). Surface Gettering Background Impurities and Defects in GaAs Plates. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 69-70. 279–284. 5 indexed citations

18.

Shmidt, N. M., V. V. Emtsev, I. L. Krestnikov, et al.. (1999). Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers. physica status solidi (b). 216(1). 533–536. 32 indexed citations

19.

Emtsev, V. V., V. Yu. Davydov, I. N. Goncharuk, et al.. (1997). Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN. Materials science forum. 258-263. 1143–1148. 14 indexed citations

20.

Krotkus, A., et al.. (1990). Time-resolved, hot-electron conductivity measurement using an electro-optic sampling technique. Applied Physics A. 51(4). 357–360. 17 indexed citations

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