J. P. Bergman

5.1k citations

210 papers · 4.1k indexed · h-index 35

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 93
- GaN-based semiconductor devices and materials 92
Atomic and Molecular Physics, and Optics 122
- Semiconductor Quantum Structures and Devices 102
- Quantum and electron transport phenomena 21

Co-authors: Erik Janzén B. Ḿonemar Г. Позина Anne Henry Hiroshi Amano Isamu Akasaki Olof Kordina I. A. Buyanova
Journals: Applied Physics Letters (35 papers)physica status solidi (b) (19 papers)Journal of Applied Physics (15 papers)Journal of Crystal Growth (15 papers)Physical review. B, Condensed matter (13 papers)
Partner nations: Sweden Japan Russia

In The Last Decade

J. P. Bergman

207 papers receiving 4.0k citations

Peers

Countries citing papers authored by J. P. Bergman

Since Specialization

Citations

This map shows the geographic impact of J. P. Bergman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. P. Bergman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. P. Bergman more than expected).

Fields of papers citing papers by J. P. Bergman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. P. Bergman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. P. Bergman. The network helps show where J. P. Bergman may publish in the future.

Co-authors

The 25 scholars most cited alongside J. P. Bergman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. P. Bergman Line = papers co-authored together J. P. Bergman links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers APL Materials ·Misagh Ghezellou, Piyush Kumar, Marianne Etzelmüller Bathen, Robert Karsthof, E.Ö. Sveinbjörnsson, Ulrike Großner, J. P. Bergman, Lasse Vines, Jawad Ul‐Hassan	2023	15
2	Delay and distortion of slow light pulses by excitons in ZnO Physical Review B ·T. V. Shubina, M. M. Glazov, N. A. Gippius, А. А. Торопов, Delphine Lagarde, P. Disseix, J. Leymarie, Bernard Gil, Г. Позина, J. P. Bergman, B. Ḿonemar	2011	13
3	Characterization of the carrot defect in 4H-SiC epitaxial layers Journal of Crystal Growth ·Jawad Ul‐Hassan, Anne Henry, P.J. McNally, J. P. Bergman	2010	44
4	Evidence for Two Mg Related Acceptors in GaN Physical Review Letters ·B. Monemar, T. Paskova, Г. Позина, Carl Hemmingsson, J. P. Bergman, T. Kawashima, Hiroshi Amano, Isamu Akasaki, S. Figge, D. Hommel, A. Usui	2009	108
5	The dominant shallow 0.225 eV acceptor in GaN physica status solidi (b) ·B. Ḿonemar, T. Paskova, J. P. Bergman, S. Figge, J. Dennemarck, D. Hommel	2006	17
6	Photoluminescence of GaN/AlN superlattices grown by MOCVD Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·T. Paskova, J. P. Bergman, Vanya Darakchieva, B. Ḿonemar, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki	2005	8
7	Investigations of optical properties of active regions in vertical cavity surface emitting lasers grown by MBE Thin Solid Films ·K. Regiński, Tomasz J. Ochalski, J. Muszalski, M. Bugajski, J. P. Bergman, P. O. Holtz, B. Ḿonemar	2002	4
8	Structural defects in electrically degraded 4H-SiC p+/n−/n+ diodes Applied Physics Letters ·Per O. Å. Persson, Lars Hultman, H. Jacobson, J. P. Bergman, Erik Janzén, J.M. Molina-Aldareguía, W.J. Clegg, (unknown)	2002	72
9	Comment on “Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure” [Appl. Phys. Lett. 73, 2471 (1998)] Applied Physics Letters ·B. Ḿonemar, J. P. Bergman, P. O. Holtz	2000	2
10	Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells Journal of Applied Physics ·Г. Позина, J. P. Bergman, B. Ḿonemar, Tetsuya Takeuchi, Hiroshi Amano, Isamu Akasaki	2000	51
11	Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells MRS Internet Journal of Nitride Semiconductor Research ·J. Dalfors, J. P. Bergman, P. O. Holtz, B. Ḿonemar, Hiroshi Amano, Isamu Akasaki	1999	14
12	Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN Solid State Communications ·I. A. Buyanova, J. P. Bergman, B. Ḿonemar, Hiroshi Amano, Isamu Akasaki, A. Wysmołek, P. Łomiak, Jacek Baranowski, K. Pakuła, R. Stępniewski, K.P. Korona, I. Grzegory, Michał Boćkowski, S. Porowski	1998	13
13	The excitonic bandgap of GaN: Dependence on substrate Solid-State Electronics ·B. Ḿonemar, J. P. Bergman, I. A. Buyanova, Hiroshi Amano, Isamu Akasaki, Theeradetch Detchprohm, K. Hiramatsu, Nobuhiko Sawaki	1997	31
14	Electronic structure and temperature dependence of excitons in GaN Materials Science and Engineering B ·B. Ḿonemar, I. A. Buyanova, J. P. Bergman, Hiroshi Amano, Isamu Akasaki	1997	4
15	Evidence of Potential Fluctuations in Modulation Doped GaN/AlGaN Heterostructures MRS Proceedings ·A. V. Buyanov, Johanna Såndberg, J. P. Bergman, Bo E. Sernelius, P-O Holtz, B. Ḿonemar, Hiroshi Amano, Isamu Akasaki	1997	2
16	Interplay between localized and free exciton recombination in multi quantum well structures Journal of Crystal Growth ·M. Godlewski, J. P. Bergman, B. Ḿonemar, E. Kurtz, D. Hommel	1996	6
17	Temperature dependence of the minority carrier lifetime in GaAs/AlGaAs double heterostructures Journal of Applied Physics ·J. P. Bergman, C. Hallin, Erik Janzén	1995	16
18	High temperature optical properties of GaAs/AlGaAs double heterostructures Semiconductor Science and Technology ·C. Hallin, J. P. Bergman, Erik Janzén	1995	1
19	Exciton Lifetimes in GaN MRS Proceedings ·J. P. Bergman, Chris I. Harris, B. Ḿonemar, Hiroshi Amano, Isamu Akasaki	1995	7
20	Time-resolved decay of the blue emission in porous silicon Applied Physics Letters ·Chris I. Harris, Mikael Syväjärvi, J. P. Bergman, Olof Kordina, Anne Henry, B. Ḿonemar, Erik Janzén	1994	29

About J. P. Bergman

J. P. Bergman is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering and Acoustics and Ultrasonics, having authored 210 papers that have together received 4.1k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (102 papers), GaN-based semiconductor devices and materials (92 papers), Semiconductor materials and devices (67 papers), Ga2O3 and related materials (53 papers), Silicon Carbide Semiconductor Technologies (53 papers), ZnO doping and properties (32 papers), Quantum Dots Synthesis And Properties (30 papers) and Quantum and electron transport phenomena (21 papers). The work is most often cited by research in Condensed Matter Physics (1.6k citations), Electronic, Optical and Magnetic Materials (1.1k citations), Atomic and Molecular Physics, and Optics (1.8k citations), Electrical and Electronic Engineering (2.8k citations) and Materials Chemistry (1.1k citations). J. P. Bergman has collaborated with scholars based in Sweden, Japan and Russia. Frequent co-authors include Erik Janzén, B. Ḿonemar, Г. Позина, Anne Henry, Hiroshi Amano, Isamu Akasaki, Olof Kordina, I. A. Buyanova, Jawad Ul‐Hassan and Nguyên Tiên Són. Their work appears in journals such as Applied Physics Letters, physica status solidi (b), Journal of Applied Physics, Journal of Crystal Growth and Physical review. B, Condensed matter.

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