Marek Skowroński

9.3k total citations · 1 hit paper
255 papers, 7.7k citations indexed

About

Marek Skowroński is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Marek Skowroński has authored 255 papers receiving a total of 7.7k indexed citations (citations by other indexed papers that have themselves been cited), including 222 papers in Electrical and Electronic Engineering, 65 papers in Atomic and Molecular Physics, and Optics and 55 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Marek Skowroński's work include Semiconductor materials and devices (113 papers), Silicon Carbide Semiconductor Technologies (111 papers) and Advanced Memory and Neural Computing (43 papers). Marek Skowroński is often cited by papers focused on Semiconductor materials and devices (113 papers), Silicon Carbide Semiconductor Technologies (111 papers) and Advanced Memory and Neural Computing (43 papers). Marek Skowroński collaborates with scholars based in United States, Sweden and Japan. Marek Skowroński's co-authors include S. Ha, David W. Greve, James A. Bain, M. Shin, L.B. Rowland, Weijin Qian, A. Y. Polyakov, J. Łagowski, H. Lendenmann and R. M. Feenstra and has published in prestigious journals such as Physical Review Letters, Nature Communications and Physical review. B, Condensed matter.

In The Last Decade

Marek Skowroński

249 papers receiving 7.5k citations

Hit Papers

Degradation of hexagonal ... 2006 2026 2012 2019 2006 100 200 300
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Degradation of hexagonal silicon-carbide-based bipolar devices
    2006 384 citations Marek Skowroński, S. Ha Journal of Applied Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Marek Skowroński United States 47 5.9k 2.1k 2.0k 2.0k 1.7k 255 7.7k
H. Bender Belgium 42 5.9k 1.0× 2.5k 1.2× 557 0.3× 2.8k 1.4× 970 0.6× 441 7.6k
Fabrizio Roccaforte Italy 46 5.9k 1.0× 2.6k 1.3× 2.4k 1.2× 2.8k 1.4× 1.5k 0.9× 345 7.9k
P. F. Carcia United States 32 3.4k 0.6× 2.6k 1.2× 1.0k 0.5× 2.9k 1.4× 2.0k 1.2× 84 6.2k
Chun‐Lin Jia Germany 53 4.2k 0.7× 1.1k 0.5× 1.1k 0.5× 7.5k 3.8× 3.5k 2.1× 271 10.1k
Christoph Adelmann Belgium 43 5.2k 0.9× 2.9k 1.4× 1.7k 0.8× 3.4k 1.7× 1.7k 1.0× 285 7.7k
M. Copel United States 52 7.3k 1.2× 3.5k 1.7× 438 0.2× 4.5k 2.3× 834 0.5× 159 9.6k
Sean W. King United States 33 2.6k 0.4× 712 0.3× 693 0.3× 1.7k 0.9× 1.4k 0.8× 194 4.0k
A. J. Kellock United States 42 2.5k 0.4× 1.9k 0.9× 692 0.3× 3.3k 1.6× 1.5k 0.9× 114 5.3k
V. Cimalla Germany 39 3.3k 0.6× 1.1k 0.5× 1.9k 1.0× 2.8k 1.4× 1.3k 0.8× 263 5.5k
Akira Sakai Japan 35 3.0k 0.5× 2.1k 1.0× 1.6k 0.8× 2.2k 1.1× 890 0.5× 310 5.6k

Countries citing papers authored by Marek Skowroński

Since Specialization
Citations

This map shows the geographic impact of Marek Skowroński's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Marek Skowroński with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Marek Skowroński more than expected).

Fields of papers citing papers by Marek Skowroński

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Marek Skowroński. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Marek Skowroński. The network helps show where Marek Skowroński may publish in the future.

Co-authorship network of co-authors of Marek Skowroński

This figure shows the co-authorship network connecting the top 25 collaborators of Marek Skowroński. A scholar is included among the top collaborators of Marek Skowroński based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Marek Skowroński. Marek Skowroński is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Skowroński, Marek, et al.. (2023). Density of amorphous sputtered Ge2Sb2Te5 thin films. AIP Advances. 13(1). 4 indexed citations
2.
Bonifacio, Cecile S., et al.. (2023). Precise Final Thinning by Concentrated Ar Ion Beam Milling of Plan View TEM Specimens from Phase Change Memory Device Prepared in Xe Plasma FIB. Proceedings - International Symposium for Testing and Failure Analysis. 84741. 309–316. 1 indexed citations
3.
Ramer, Georg, Dasheng Li, Brian D. Hoskins, et al.. (2019). Spontaneous current constriction in threshold switching devices. Nature Communications. 10(1). 1628–1628. 62 indexed citations
4.
Picard, Yoosuf N., et al.. (2014). In situ biasing TEM investigation of resistive switching events in TiO<inf>2</inf>-based RRAM. 5E.5.1–5E.5.5. 4 indexed citations
5.
Skowroński, Marek, et al.. (2007). Perspectives on inorganic, organic, and biological crystal growth : from fundamentals to applications : based on the lectures presented at the 13th International Summer School on Crystal Growth, Park City, Utah 5-11 August 2007. American Institute of Physics eBooks. 4 indexed citations
6.
Zhang, Xuan, Marek Skowroński, Robert E. Stahlbush, et al.. (2007). Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy. Journal of Applied Physics. 102(9). 62 indexed citations
7.
Skowroński, Marek, et al.. (2007). Perspectives on Inorganic, Organic, and Biological Crystal Growth: From Fundamentals to Applications. 916. 35 indexed citations
8.
Glembocki, O. J., Marek Skowroński, S. M. Prokes, D. Kurt Gaskill, & Joshua D. Caldwell. (2006). Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC. Materials science forum. 527-529. 347–350. 8 indexed citations
9.
Benamara, Mourad, Xuan Zhang, Marek Skowroński, et al.. (2005). Structure of the carrot defect in 4H-SiC epitaxial layers. Applied Physics Letters. 86(2). 73 indexed citations
10.
Polyakov, A. Y., et al.. (2005). Nonuniformities of electrical resistivity in undoped 6H-SiC wafers. Journal of Applied Physics. 97(11). 21 indexed citations
11.
Skowroński, Marek, et al.. (2002). Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions. Applied Physics Letters. 80(5). 749–751. 167 indexed citations
12.
Ha, S., Noel T. Nuhfer, Marc De Graef, Gregory S. Rohrer, & Marek Skowroński. (2000). Origin of Threading Dislocation Arrays in SiC Boules Grown by PVT. Materials science forum. 338-342. 477–480. 11 indexed citations
13.
Vetter, William M., et al.. (2000). X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers. Materials science forum. 338-342. 473–476. 4 indexed citations
14.
Heydemann, V.D., Edward Sanchez, Gregory S. Rohrer, & Marek Skowroński. (1997). The Structural Evolution Of Lely Seeds During The Initial Stages Of Sic Sublimation Growth. MRS Proceedings. 483. 3 indexed citations
15.
Qian, Weijin, Marek Skowroński, G. Augustine, et al.. (1995). Characterization of Polishing‐Related Surface Damage in (0001) Silicon Carbide Substrates. Journal of The Electrochemical Society. 142(12). 4290–4294. 51 indexed citations
16.
Skowroński, Marek, et al.. (1991). Signature of the gallium-oxygen-gallium defect in GaAs by deep level transient spectroscopy measurements. Applied Physics Letters. 58(8). 859–861. 46 indexed citations
17.
Skowroński, Marek. (1987). On the Origin of EL2 Intracenter Absorption Band in GaAs. MRS Proceedings. 104. 3 indexed citations
18.
Gatos, H. C., Marek Skowroński, L. M. Pawlowicz, & J. Łagowski. (1984). Oxygen in GaAs - Direct and indirect effects. NASA STI/Recon Technical Report A. 85. 1 indexed citations
19.
Kamińska, M., Marek Skowroński, J. Łagowski, J. M. Parsey, & H. C. Gatos. (1983). Intracenter transitions in the dominant deep level (EL2) in GaAs. Applied Physics Letters. 43(3). 302–304. 163 indexed citations
20.
Gurney, T R, et al.. (1964). DISCUSSION. FACTORS GOVERNING THE CHOICE BETWEEN REPAIRING, STRENGTHENING, AND RECONSTRUCTING RAILWAY GIRDER BRIDGES.. Proceedings of the Institution of Civil Engineers. 28(4). 570–598.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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