A. M. Wowchak

1.2k total citations
61 papers, 990 citations indexed

About

A. M. Wowchak is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, A. M. Wowchak has authored 61 papers receiving a total of 990 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Condensed Matter Physics, 33 papers in Electronic, Optical and Magnetic Materials and 21 papers in Electrical and Electronic Engineering. Recurrent topics in A. M. Wowchak's work include GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (29 papers) and ZnO doping and properties (17 papers). A. M. Wowchak is often cited by papers focused on GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (29 papers) and ZnO doping and properties (17 papers). A. M. Wowchak collaborates with scholars based in United States, Russia and China. A. M. Wowchak's co-authors include P. P. Chow, A. M. Dabiran, J. M. Van Hove, B. Cui, S. J. Pearton, A. Osinsky, P. I. Cohen, J. N. Kuznia, N. B. Smirnov and A. Y. Polyakov and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

A. M. Wowchak

60 papers receiving 945 citations

Peers

Countries citing papers authored by A. M. Wowchak

Since Specialization

Citations

This map shows the geographic impact of A. M. Wowchak's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. M. Wowchak with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. M. Wowchak more than expected).

Fields of papers citing papers by A. M. Wowchak

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. M. Wowchak. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. M. Wowchak. The network helps show where A. M. Wowchak may publish in the future.

Co-authorship network of co-authors of A. M. Wowchak

This figure shows the co-authorship network connecting the top 25 collaborators of A. M. Wowchak. A scholar is included among the top collaborators of A. M. Wowchak based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. M. Wowchak. A. M. Wowchak is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si(111) on buffer growth conditions by MBE 2013 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Partha Mukhopadhyay, (unknown), A. M. Wowchak, A. M. Dabiran, P.D. Chow, Dhrubes Biswas	12
2	Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template 2012 ·Optics Express ·Junjun Xue, (unknown), Bin Liu, Huihui Lu, (unknown), Yi Zheng, B. Cui, A. M. Wowchak, A. M. Dabiran, (unknown), Jianping Zhang	8
3	Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer 2011 ·Journal of Applied Physics ·(unknown), (unknown), Z. G. Yin, (unknown), Jun Dong, (unknown), Shen Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, P. P. Chow	25
4	Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy 2010 ·Journal of Applied Physics ·A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Е. А. Кожухова, A. M. Dabiran, P. P. Chow, A. M. Wowchak, S. J. Pearton	4
5	Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes 2010 ·Applied Physics Letters ·Jingbi You, (unknown), (unknown), (unknown), Z. G. Yin, Hairen Tan, Wenjun Zhang, Paul K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, P. P. Chow	79
6	Direct deposition of GaN-based photocathodes on microchannel plates 2009 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·A. M. Dabiran, A. M. Wowchak, Peter Chow, Oswald H. W. Siegmund, Jeffrey S. Hull, James M. Malloy, Anton S. Tremsin	5
7	Electron irradiation of AlGaN∕GaN and AlN∕GaN heterojunctions 2008 ·Applied Physics Letters ·A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Alexander V. Markov, S. J. Pearton, A. M. Dabiran, A. M. Wowchak, B. Cui, A. Osinsky, P. P. Chow, N. G. Kolin, V. M. Boĭko, D. I. Merkurisov	15
8	Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures 2008 ·Applied Physics Letters ·A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, T. G. Yugova, Alexander V. Markov, A. M. Dabiran, A. M. Wowchak, B. Cui, Jun Xie, A. Osinsky, P. P. Chow, S. J. Pearton	17
9	Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors 2007 ·Applied Physics Letters ·A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Alexander V. Markov, A. M. Dabiran, A. M. Wowchak, A. Osinsky, B. Cui, P. P. Chow, S. J. Pearton	48
10	Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy 2007 ·Journal of The Electrochemical Society ·A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Alexander V. Markov, T. G. Yugova, Е. А. Петрова, A. M. Dabiran, A. M. Wowchak, A. Osinsky, P. P. Chow, S. J. Pearton, (unknown), В. Т. Бублик	18
11	ALD Al ₂ O ₃ passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC 2007 ·Electronics Letters ·Dae‐Hyeong Kim, V. Kumar, (unknown), A. M. Dabiran, A. M. Wowchak, A. Osinsky, I. Adesida	14
12	Conductivity and Hall effect characterization of highly resistive molecular-beam epitaxial GaN layers 2000 ·Journal of Applied Physics ·P. Kordoš, (unknown), (unknown), J. M. Van Hove, A. M. Wowchak, P. P. Chow	26
13	Bias-assisted photoelectrochemical etching of p-GaN at 300 K 2000 ·Applied Physics Letters ·(unknown), (unknown), M. I. Nathan, P. P. Chow, J. M. Van Hove, A. M. Wowchak, H. Morkoç	30
14	III-N light emitting diodes fabricated using RF nitrogen gas source MBE 1996 ·Journal of Crystal Growth ·J. M. Van Hove, (unknown), Erik Nelson, A. M. Wowchak, P. P. Chow	14
15	Visible Blind uv GaN Photovoltaic Detector Arrays Grown by rf Atomic Nitrogen Plasma MBE 1996 ·MRS Proceedings ·J. M. Van Hove, P. P. Chow, R. Hickman, A. M. Wowchak, Jody J. Klaassen, C. J. Polley	9
16	(111) InAs/GaInSb strained-layer superlattice growth investigation 1995 ·Journal of Crystal Growth ·(unknown), A. M. Wowchak, P. P. Chow, J. M. Van Hove	3
17	Epitaxy of FeAl films on GaAs(100) by molecular beam epitaxy 1990 ·Journal of Electronic Materials ·J. N. Kuznia, A. M. Wowchak, P. I. Cohen	5
18	Magnetic Domains in Epitaxial (100) Fe Thin Films 1989 ·MRS Proceedings ·(unknown), P. J. Ryan, J. N. Kuznia, A. M. Wowchak, P. I. Cohen, Robert M. White, G. A. Prinz, E. Dan Dahlberg	1
19	On the origin of RHEED intensity oscillations 1989 ·Journal of Crystal Growth ·G.S. Petrich, Paul Pukite, A. M. Wowchak, Gregory J. Whaley, P. I. Cohen, A. S. Arrott	27
20	Summary Abstract: Layer-by-layer evaporation of GaAs (001) 1985 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·J. M. Van Hove, Paul Pukite, Gregory J. Whaley, A. M. Wowchak, P. I. Cohen	17

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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