N. G. Kolin

864 total citations
57 papers, 722 citations indexed

About

N. G. Kolin is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, N. G. Kolin has authored 57 papers receiving a total of 722 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 31 papers in Condensed Matter Physics and 27 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in N. G. Kolin's work include GaN-based semiconductor devices and materials (31 papers), Ga2O3 and related materials (25 papers) and Semiconductor materials and devices (21 papers). N. G. Kolin is often cited by papers focused on GaN-based semiconductor devices and materials (31 papers), Ga2O3 and related materials (25 papers) and Semiconductor materials and devices (21 papers). N. G. Kolin collaborates with scholars based in Russia, United States and South Korea. N. G. Kolin's co-authors include V. N. Brudnyı̆, A. Y. Polyakov, S. J. Pearton, N. B. Smirnov, A. V. Govorkov, V. M. Boĭko, D. I. Merkurisov, Alexander V. Markov, In‐Hwan Lee and Е. А. Кожухова and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

N. G. Kolin

53 papers receiving 692 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. G. Kolin Russia 16 518 422 356 215 189 57 722
L. Polenta Italy 15 397 0.8× 469 1.1× 234 0.7× 237 1.1× 199 1.1× 41 725
Karl Engl Germany 10 378 0.7× 262 0.6× 154 0.4× 241 1.1× 200 1.1× 20 659
В. В. Ратников Russia 16 561 1.1× 318 0.8× 285 0.8× 230 1.1× 380 2.0× 79 799
C.J. Collins United States 13 496 1.0× 258 0.6× 339 1.0× 218 1.0× 145 0.8× 23 650
Manato Deki Japan 18 805 1.6× 645 1.5× 427 1.2× 195 0.9× 261 1.4× 70 1.0k
Ines Pietzonka Germany 14 395 0.8× 419 1.0× 109 0.3× 433 2.0× 199 1.1× 56 726
M. R. Gokhale India 15 301 0.6× 283 0.7× 182 0.5× 317 1.5× 302 1.6× 59 651
M. Salvato Italy 18 529 1.0× 150 0.4× 291 0.8× 291 1.4× 403 2.1× 96 968
Shin Hashimoto United States 18 409 0.8× 518 1.2× 296 0.8× 370 1.7× 197 1.0× 45 843
T. Yamamoto Japan 16 252 0.5× 227 0.5× 171 0.5× 138 0.6× 335 1.8× 30 636

Countries citing papers authored by N. G. Kolin

Since Specialization
Citations

This map shows the geographic impact of N. G. Kolin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. G. Kolin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. G. Kolin more than expected).

Fields of papers citing papers by N. G. Kolin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. G. Kolin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. G. Kolin. The network helps show where N. G. Kolin may publish in the future.

Co-authorship network of co-authors of N. G. Kolin

This figure shows the co-authorship network connecting the top 25 collaborators of N. G. Kolin. A scholar is included among the top collaborators of N. G. Kolin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. G. Kolin. N. G. Kolin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Brudnyı̆, V. N., et al.. (2018). Neutron irradiation-induced modification of electrical and structural properties of GaN epifilms grown on Al2O3 (0001) substrate. Semiconductor Science and Technology. 33(9). 95011–95011. 4 indexed citations
2.
Liu, Lu, F. Ren, A. Y. Polyakov, et al.. (2013). Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(2). 25 indexed citations
3.
Brudnyı̆, V. N., et al.. (2012). Electrical properties of electron-irradiated epitaxial n-GaN films. Russian Physics Journal. 55(1). 53–57. 1 indexed citations
4.
Lee, In‐Hwan, A. Y. Polyakov, N. B. Smirnov, et al.. (2011). Deep electron and hole traps in neutron transmutation doped n-GaN. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(4). 18 indexed citations
5.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2009). Alpha particle detection with GaN Schottky diodes. Journal of Applied Physics. 106(10). 35 indexed citations
6.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2008). Electron irradiation of AlGaN∕GaN and AlN∕GaN heterojunctions. Applied Physics Letters. 93(15). 15 indexed citations
7.
Brudnyı̆, V. N., А. V. Kosobutsky, & N. G. Kolin. (2008). The charge neutrality level and the fermi level pinning in A3N (BN, AlN, GaN, InN) nitrides. Russian Physics Journal. 51(12). 1270–1278. 15 indexed citations
8.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2007). Electron Irradiation Effects in GaN∕InGaN Multiple Quantum Well Structures. Journal of The Electrochemical Society. 155(1). H31–H31. 15 indexed citations
9.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2007). Fast neutron irradiation effects in n-GaN. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(2). 436–442. 58 indexed citations
10.
Brudnyı̆, V. N., et al.. (2007). Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors. Russian Physics Journal. 50(5). 429–434. 2 indexed citations
11.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2006). Neutron irradiation effects in p-GaN. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(5). 2256–2261. 33 indexed citations
12.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2006). Neutron irradiation effects in undoped n-AlGaN. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(3). 1094–1097. 9 indexed citations
13.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2006). Fermi level pinning in heavily neutron-irradiated GaN. Journal of Applied Physics. 100(9). 34 indexed citations
14.
Boĭko, V. M., et al.. (2005). Electrical and structural properties of InSb crystals irradiated with reactor neutrons. Physica B Condensed Matter. 371(2). 272–279. 4 indexed citations
15.
Boĭko, V. M., et al.. (2005). Structure of InP single crystals irradiated with reactor neutrons. Physica B Condensed Matter. 373(1). 82–89. 6 indexed citations
16.
Brudnyı̆, V. N., et al.. (2003). Electronic properties of irradiated semiconductors. A model of the fermi level pinning. Semiconductors. 37(5). 537–545. 12 indexed citations
17.
Kolin, N. G., et al.. (2000). Electrical properties of transmutation-doped indium phosphide. Semiconductors. 34(2). 150–154. 1 indexed citations
18.
Brudnyı̆, V. N., N. G. Kolin, & Alexey Potapov. (1993). Deep trapping centers in n-type GaAs bombarded with fast neutrons. Semiconductors. 27(2). 145–147. 1 indexed citations
19.
Brudnyı̆, V. N., et al.. (1986). Electrical Properties and Positron Annihilation in Neutron-Irradiated n-InP. physica status solidi (a). 93(1). 195–200. 8 indexed citations
20.
Kolin, N. G., et al.. (1980). Influence of fast-neutron irradiation on the properties of gallium arsenide doped with various impurities. 132(2). 264–270. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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