D. Johnstone

1.1k total citations
52 papers, 938 citations indexed

About

D. Johnstone is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Johnstone has authored 52 papers receiving a total of 938 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 27 papers in Condensed Matter Physics and 22 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Johnstone's work include GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (21 papers) and Semiconductor Quantum Structures and Devices (14 papers). D. Johnstone is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (21 papers) and Semiconductor Quantum Structures and Devices (14 papers). D. Johnstone collaborates with scholars based in United States, Türkiye and Russia. D. Johnstone's co-authors include H. Morkoç̌, S. Doğan, M. A. Reshchikov, Ya. I. Alivov, Qi Fan, Jinqiao Xie, V. Avrutin, Norio Onojima, Jacob H. Leach and Y. K. Yeo and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

D. Johnstone

50 papers receiving 918 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Johnstone United States 20 602 486 342 337 235 52 938
Patrik Ščajev Lithuania 20 760 1.3× 615 1.3× 121 0.4× 129 0.4× 274 1.2× 86 1.0k
Vyacheslav Solovyov United States 19 210 0.3× 499 1.0× 713 2.1× 278 0.8× 114 0.5× 65 991
S. V. Samoilenkov Russia 12 297 0.5× 344 0.7× 348 1.0× 217 0.6× 57 0.2× 56 766
Tamara Isaacs‐Smith United States 19 1.0k 1.7× 246 0.5× 159 0.5× 259 0.8× 305 1.3× 81 1.2k
S. Nagai Japan 9 449 0.7× 463 1.0× 418 1.2× 225 0.7× 224 1.0× 19 894
E. V. Kalinina Russia 12 535 0.9× 463 1.0× 244 0.7× 302 0.9× 144 0.6× 43 821
U. Schoop United States 19 340 0.6× 428 0.9× 849 2.5× 319 0.9× 132 0.6× 39 1.1k
N. Nordell Sweden 20 1.9k 3.1× 204 0.4× 151 0.4× 298 0.9× 654 2.8× 66 2.0k
Takashi Manago Japan 15 381 0.6× 560 1.2× 240 0.7× 627 1.9× 666 2.8× 87 1.2k
I. K. Shmagin United States 11 391 0.6× 419 0.9× 795 2.3× 389 1.2× 360 1.5× 16 1.0k

Countries citing papers authored by D. Johnstone

Since Specialization
Citations

This map shows the geographic impact of D. Johnstone's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Johnstone with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Johnstone more than expected).

Fields of papers citing papers by D. Johnstone

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Johnstone. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Johnstone. The network helps show where D. Johnstone may publish in the future.

Co-authorship network of co-authors of D. Johnstone

This figure shows the co-authorship network connecting the top 25 collaborators of D. Johnstone. A scholar is included among the top collaborators of D. Johnstone based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Johnstone. D. Johnstone is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Cui, Yunlong, Pijush Bhattacharya, Vladimir Buliga, et al.. (2013). Defects in 6LiInSe2 neutron detector investigated by photo-induced current transient spectroscopy and photoluminescence. Applied Physics Letters. 103(9). 26 indexed citations
2.
DiLello, Nicole, D. Johnstone, & Judy L. Hoyt. (2012). Characterization of dark current in Ge-on-Si photodiodes. Journal of Applied Physics. 112(5). 31 indexed citations
3.
Alivov, Yahya, Zhaoyang Fan, & D. Johnstone. (2009). Titanium nanotubes grown by titanium anodization. Journal of Applied Physics. 106(3). 23 indexed citations
4.
Cui, Yunlong, Dave Caudel, Pijush Bhattacharya, et al.. (2009). Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence. Journal of Applied Physics. 105(5). 28 indexed citations
5.
Alivov, Ya. I., Bo Xiao, Qi Fan, et al.. (2008). Properties of isotype n-ZnO/n-GaN heterostructures studied by I–V–T and electron beam induced current methods. Journal of Physics Condensed Matter. 20(8). 85201–85201. 13 indexed citations
6.
He, Lei, et al.. (2006). Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy. Applied Physics Letters. 88(7). 19 indexed citations
7.
Ramaiah, Kodigala Subba, et al.. (2006). Studies of 4H-SiC wafer and its epitaxial layers grown by chemical vapor deposition. Physica B Condensed Matter. 391(1). 35–41. 3 indexed citations
8.
Johnstone, D., et al.. (2006). Surface spatial profiles of defects in GaN. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6121. 61210N–61210N. 3 indexed citations
9.
Litton, C. W., Ya. I. Alivov, D. Johnstone, et al.. (2006). The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices. Materials science forum. 527-529. 1571–1574. 1 indexed citations
10.
Ramaiah, Kodigala Subba, et al.. (2005). Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition. Journal of Applied Physics. 98(10). 12 indexed citations
11.
Johnstone, D., et al.. (2005). Comparison of deep levels in GaN grown by MBE, MOCVD, and HVPE. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5739. 7–7. 12 indexed citations
12.
Alivov, Ya. I., Ü. Özgür, S. Doğan, et al.. (2005). Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy. Applied Physics Letters. 86(24). 130 indexed citations
13.
Reshchikov, M. A., et al.. (2004). Transient photovoltage in GaN as measured by atomic force microscope tip. Journal of Applied Physics. 96(5). 2556–2560. 35 indexed citations
14.
Doğan, S., et al.. (2004). Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy. Applied Physics Letters. 84(16). 3070–3072. 38 indexed citations
15.
Doğan, S., D. Johnstone, Feng Yun, et al.. (2004). The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy. Applied Physics Letters. 85(9). 1547–1549. 39 indexed citations
16.
Johnstone, D., et al.. (2004). Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition. Applied Physics Letters. 85(18). 4058–4060. 13 indexed citations
17.
Reshchikov, M. A., et al.. (2003). Band bending near the surface in GaN as detected by a charge sensitive probe. MRS Proceedings. 798. 23 indexed citations
18.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2003). Defects and localized states in MBE-grown GaAs1−xNxsolid solutions prepared by molecular-beam epitaxy. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics. 83(21). 2531–2544. 1 indexed citations
19.
Doğan, S., Daming Huang, Lei He, et al.. (2003). Improvement of n-GaN Schottky diode rectifying characteristics using KOH etching. Applied Physics Letters. 82(20). 3556–3558. 29 indexed citations
20.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2002). Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions. Solid-State Electronics. 46(12). 2141–2146. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Patrik Ščajev Breakdown of academic impact, for papers by Vyacheslav Solovyov Breakdown of academic impact, for papers by S. V. Samoilenkov Breakdown of academic impact, for papers by Tamara Isaacs‐Smith Breakdown of academic impact, for papers by S. Nagai Breakdown of academic impact, for papers by E. V. Kalinina Breakdown of academic impact, for papers by U. Schoop Breakdown of academic impact, for papers by N. Nordell Breakdown of academic impact, for papers by Takashi Manago Breakdown of academic impact, for papers by I. K. Shmagin
Rankless by CCL
2026