D. Johnstone

1.1k citations

52 papers · 938 indexed · h-index 20

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 27
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 10
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 21
- Silicon Carbide Semiconductor Technologies 14
- Advanced Semiconductor Detectors and Materials 7
Materials Chemistry top 10%
- ZnO doping and properties 12
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 14
- Semiconductor materials and interfaces 12

Co-authors: H. Morkoç̌S. Doğan M. A. Reshchikov Ya. I. Alivov Qi Fan Jinqiao Xie V. Avrutin Norio Onojima
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters (17 papers)Journal of Applied Physics (7 papers)Solid-State Electronics (3 papers)
Partner nations: United States Türkiye Russia

In The Last Decade

D. Johnstone

50 papers receiving 918 citations

Peers

Countries citing papers authored by D. Johnstone

Since Specialization

Citations

This map shows the geographic impact of D. Johnstone's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Johnstone with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Johnstone more than expected).

Fields of papers citing papers by D. Johnstone

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Johnstone. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Johnstone. The network helps show where D. Johnstone may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. Johnstone, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Johnstone Line = papers co-authored together D. Johnstone links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Defects in 6LiInSe2 neutron detector investigated by photo-induced current transient spectroscopy and photoluminescence Applied Physics Letters ·Yunlong Cui,Pijush Bhattacharya,Vladimir Buliga,E. Tupitsyn,Emmanuel Rowe,Brenden Wiggins,D. Johnstone,Ashley C. Stowe,A. Bürger	2013	26
2	Characterization of dark current in Ge-on-Si photodiodes Journal of Applied Physics ·Nicole DiLello,D. Johnstone,Judy L. Hoyt	2012	31
3	Titanium nanotubes grown by titanium anodization Journal of Applied Physics ·Yahya Alivov,Zhaoyang Fan,D. Johnstone	2009	23
4	Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence Journal of Applied Physics ·Yunlong Cui,Dave Caudel,Pijush Bhattacharya,A. Bürger,Krishna C. Mandal,D. Johnstone,S. A. Payne	2009	28
5	Properties of isotype n-ZnO/n-GaN heterostructures studied by I–V–T and electron beam induced current methods Journal of Physics Condensed Matter ·Ya. I. Alivov,Bo Xiao,Erin Holowaychuk,Qi Fan,H. Morkoç̌,D. Johnstone,O. Lopatiuk‐Tirpak,Leonid Chernyak,Tomás Núñez	2008	13
6	Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy Applied Physics Letters ·Lei He,Ana Saffar,Jun Xie,Martı́n Muñoz,D. Johnstone,H. Morkoç	2006	19
7	Studies of 4H-SiC wafer and its epitaxial layers grown by chemical vapor deposition Physica B Condensed Matter ·Kodigala Subba Ramaiah,I. Bhat,T. Paul Chow,G.M. Jarratt,E. Fred Schubert,D. Johnstone	2006	3
8	Surface spatial profiles of defects in GaN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·D. Johnstone,Erin Holowaychuk,Jun Xie,Y. Fu,C. W. Litton,H. Morkoç̌	2006	3
9	The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices Materials science forum ·C. W. Litton,Ya. I. Alivov,D. Johnstone,Ümit Özgür,V. Avrutin,Qi Fan,Erin Holowaychuk,Kai Zhu,H. Morkoç̌	2006	1
10	Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition Journal of Applied Physics ·Kodigala Subba Ramaiah,Irshad Ul Haq Bhat,T. P. Chow,Hélène Ollat,E. Fred Schubert,D. Johnstone,Erin Holowaychuk	2005	12
11	Comparison of deep levels in GaN grown by MBE, MOCVD, and HVPE Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·D. Johnstone,Gao Ying-ying,S. Doğan,Y. T. Moon,Feng Yun,H. Morkoç̌	2005	12
12	Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters ·Ya. I. Alivov,Ü. Özgür,S. Doğan,D. Johnstone,V. Avrutin,Norio Onojima,西田歳明,Jinqiao Xie,Qi Fan,H. Morkoç̌	2005	130
13	Transient photovoltage in GaN as measured by atomic force microscope tip Journal of Applied Physics ·M. A. Reshchikov,Ceferino L. Follosco,D. Johnstone,H. Morkoç̌	2004	35
14	Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy Applied Physics Letters ·Bernie. Zak,S. Doğan,Ceferino L. Follosco,M. A. Reshchikov,D. Johnstone,H. Morkoç̌	2004	38
15	The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy Applied Physics Letters ·S. Doğan,D. Johnstone,Feng Yun,Ceferino L. Follosco,Jacob H. Leach,A. A. Baski,H. Morkoç̌,Koïta Kadidia,B. N. Ganguly	2004	39
16	Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition Applied Physics Letters ·D. Johnstone,S. Doğan,Jacob H. Leach,Štěpán Skripnik,Yue Fu,Tanzina Akhter,H. Morkoç̌	2004	13
17	Band bending near the surface in GaN as detected by a charge sensitive probe MRS Proceedings ·Ceferino L. Follosco,M. A. Reshchikov,D. Johnstone,H. Morkoç̌	2003	23
18	Defects and localized states in MBE-grown GaAs_1−xN_xsolid solutions prepared by molecular-beam epitaxy The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics ·A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,В. Т. Бублик,A. Botchkarev,James A. Griffin,D. Johnstone,T. Steiner,S. Noor Mohammad	2003	1
19	Improvement of n-GaN Schottky diode rectifying characteristics using KOH etching Applied Physics Letters ·سمیرا سادات نوری زاده,S. Doğan,Neil D. Reznik,Daming Huang,Lei He,D. Johnstone,H. Morkoç,R. J. Molnar	2003	29
20	Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions Solid-State Electronics ·A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,A. Botchkarev,近藤慶一,Mohamed M. Fahmi,James A. Griffin,J. Q. Zhu,S. Noor Mohammad,D. Johnstone,В. Т. Бублик,Mukul Madaan,Ebrahimzadeh Ataollah	2002	6

About D. Johnstone

D. Johnstone is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 52 papers that have together received 938 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (21 papers), Semiconductor Quantum Structures and Devices (14 papers), Silicon Carbide Semiconductor Technologies (14 papers), Semiconductor materials and interfaces (12 papers), ZnO doping and properties (12 papers), Ga2O3 and related materials (10 papers) and Advanced Semiconductor Detectors and Materials (7 papers). The work is most often cited by research in Condensed Matter Physics (342 citations), Electronic, Optical and Magnetic Materials (337 citations), Electrical and Electronic Engineering (602 citations), Materials Chemistry (486 citations) and Atomic and Molecular Physics, and Optics (235 citations). D. Johnstone has collaborated with scholars based in United States, Türkiye and Russia. Frequent co-authors include H. Morkoç̌, S. Doğan, M. A. Reshchikov, Ya. I. Alivov, Qi Fan, Jinqiao Xie, V. Avrutin, Norio Onojima, Jacob H. Leach and Y. K. Yeo. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Solid-State Electronics, Journal of Electronic Materials and Superlattices and Microstructures.

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