A. Botchkarev

6.2k total citations · 1 hit paper
102 papers, 5.0k citations indexed

About

A. Botchkarev is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, A. Botchkarev has authored 102 papers receiving a total of 5.0k indexed citations (citations by other indexed papers that have themselves been cited), including 91 papers in Condensed Matter Physics, 66 papers in Electrical and Electronic Engineering and 43 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in A. Botchkarev's work include GaN-based semiconductor devices and materials (91 papers), Semiconductor materials and devices (54 papers) and Ga2O3 and related materials (43 papers). A. Botchkarev is often cited by papers focused on GaN-based semiconductor devices and materials (91 papers), Semiconductor materials and devices (54 papers) and Ga2O3 and related materials (43 papers). A. Botchkarev collaborates with scholars based in United States, Italy and Russia. A. Botchkarev's co-authors include H. Morkoç̌, H. Morkoç, A. Salvador, S. Noor Mohammad, Özgür Aktaş, Angus Rockett, G. Martin, Z. Fan, Wook Kim and W. Kim and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. Botchkarev

99 papers receiving 4.9k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

1996 576 citations G. Martin, A. Botchkarev et al. Applied Physics Letters profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
A. Botchkarev	4.2k	2.4k	2.0k	1.9k	1.6k	102	5.0k
O. Briot	2.3k 0.6×	837 0.4×	1.1k 0.6×	1.1k 0.6×	1.3k 0.8×	153	2.9k
A. Georgakilas	1.8k 0.4×	1.3k 0.5×	928 0.5×	947 0.5×	863 0.5×	202	2.7k
K. H. Ploog	2.0k 0.5×	1.1k 0.5×	1.4k 0.7×	927 0.5×	1.4k 0.9×	78	3.0k
J. Frandon	1.3k 0.3×	515 0.2×	592 0.3×	519 0.3×	779 0.5×	76	1.8k
A. Rar	728 0.2×	473 0.2×	312 0.2×	342 0.2×	745 0.5×	50	1.8k
R.L. Aulombard	786 0.2×	720 0.3×	651 0.3×	387 0.2×	724 0.5×	108	1.5k
F. Demangeot	1.2k 0.3×	467 0.2×	456 0.2×	519 0.3×	833 0.5×	68	1.7k
M. A. Renucci	976 0.2×	621 0.3×	701 0.4×	441 0.2×	798 0.5×	71	1.7k
B. Jenichen	1.2k 0.3×	932 0.4×	1.6k 0.8×	1.1k 0.6×	1.6k 1.0×	160	3.0k
T. G. Andersson	678 0.2×	1.1k 0.5×	1.2k 0.6×	457 0.2×	514 0.3×	118	1.9k

Countries citing papers authored by A. Botchkarev

Since Specialization

Citations

This map shows the geographic impact of A. Botchkarev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Botchkarev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Botchkarev more than expected).

Fields of papers citing papers by A. Botchkarev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Botchkarev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Botchkarev. The network helps show where A. Botchkarev may publish in the future.

Co-authorship network of co-authors of A. Botchkarev

This figure shows the co-authorship network connecting the top 25 collaborators of A. Botchkarev. A scholar is included among the top collaborators of A. Botchkarev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Botchkarev. A. Botchkarev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Botchkarev, A., James A. Griffin, N. B. Smirnov, et al.. (2006). Optical properties of GaAs_1−xN_xalloys grown by molecular beam epitaxy. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics. 86(23). 3477–3486. 3 indexed citations

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2003). Defects and localized states in MBE-grown GaAs_1−xN_xsolid solutions prepared by molecular-beam epitaxy. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics. 83(21). 2531–2544. 1 indexed citations

Aktaş, Özgür, Z. Fan, A. Botchkarev, et al.. (2002). High-transconductance GaN MODFETs. 205–208. 5 indexed citations

Bairamov, B. H., et al.. (1999). Direct evidence of tensile strain in wurtzite structuren−GaNlayers grown onn−Si(111)using AlN buffer layers. Physical review. B, Condensed matter. 60(24). 16741–16746. 38 indexed citations

Fang, Z-Q., D. C. Look, W. Kim, et al.. (1998). Deep centers in n-GaN grown by reactive molecular beam epitaxy. Applied Physics Letters. 72(18). 2277–2279. 117 indexed citations

Hamdani, F., et al.. (1997). Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO. Applied Physics Letters. 71(21). 3111–3113. 37 indexed citations

Mair, R., K. C. Zeng, J. Y. Lin, et al.. (1997). Photoluminescence Properties Of Gan/AlGaN Multiple Quantum Well Microdisks. MRS Proceedings. 482.

Hamdani, F., A. Botchkarev, W. Kim, et al.. (1997). Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy. Applied Physics Letters. 70(4). 467–469. 81 indexed citations

Schmidt, T. J., Xing Yang, W. Shan, et al.. (1996). Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy. Applied Physics Letters. 68(13). 1820–1822. 41 indexed citations

10.

Martin, G., A. Botchkarev, Angus Rockett, & H. Morkoç. (1996). Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy. Applied Physics Letters. 68(18). 2541–2543. 576 indexed citations breakdown →

11.

Look, D. C., D. C. Reynolds, W. Kim, et al.. (1996). Deep-center hopping conduction in GaN. Journal of Applied Physics. 80(5). 2960–2963. 83 indexed citations

12.

Ruvimov, S., Z. Liliental-Weber, J. Washburn, et al.. (1996). Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN. Applied Physics Letters. 69(11). 1556–1558. 253 indexed citations

13.

Ruvimov, S., Z. Liliental‐Weber, J. Washburn, et al.. (1996). Tem Structure Characterization Of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts For n-GaN. MRS Proceedings. 423. 4 indexed citations

14.

Salvador, A., et al.. (1996). Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia. Applied Physics Letters. 69(18). 2692–2694. 45 indexed citations

15.

Fan, Zhifang, S. Noor Mohammad, Özgür Aktaş, et al.. (1996). Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistors. Applied Physics Letters. 69(9). 1229–1231. 44 indexed citations

16.

Tsen, K. T., R. P. Joshi, D. K. Ferry, et al.. (1996). Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN. Applied Physics Letters. 68(21). 2990–2992. 59 indexed citations

17.

Morkoç̌, H., A. Botchkarev, A. Salvador, & B. Sverdlov. (1995). GaN based III–V nitrides by molecular beam epitaxy. Journal of Crystal Growth. 150. 887–891. 30 indexed citations

18.

Smith, M., G. D. Chen, J. Y. Lin, et al.. (1995). Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy. Applied Physics Letters. 66(25). 3474–3476. 30 indexed citations

19.

Reed, J., Z. Fan, Guangjun Gao, A. Botchkarev, & H. Morkoç̌. (1994). GaAs metal insulator semiconductor capacitors and high transconductance metal insulator semiconductor field effect transistors. Applied Physics Letters. 64(20). 2706–2708. 25 indexed citations

20.

Huang, Fengyi, Gang Zhou, Z. Fan, et al.. (1993). Optical-gain enhancement in resonant-cavity heterojunction bipolar phototransistor through emitter-edge thinning. Electronics Letters. 29(9). 807–808. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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