A. Botchkarev

6.2k total citations · 1 hit paper
102 papers, 5.0k citations indexed

About

A. Botchkarev is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, A. Botchkarev has authored 102 papers receiving a total of 5.0k indexed citations (citations by other indexed papers that have themselves been cited), including 91 papers in Condensed Matter Physics, 66 papers in Electrical and Electronic Engineering and 43 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in A. Botchkarev's work include GaN-based semiconductor devices and materials (91 papers), Semiconductor materials and devices (54 papers) and Ga2O3 and related materials (43 papers). A. Botchkarev is often cited by papers focused on GaN-based semiconductor devices and materials (91 papers), Semiconductor materials and devices (54 papers) and Ga2O3 and related materials (43 papers). A. Botchkarev collaborates with scholars based in United States, Italy and Russia. A. Botchkarev's co-authors include H. Morkoç̌, H. Morkoç, A. Salvador, S. Noor Mohammad, Özgür Aktaş, Angus Rockett, G. Martin, Z. Fan, Wook Kim and W. Kim and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. Botchkarev

99 papers receiving 4.9k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

1996 576 citations G. Martin, A. Botchkarev et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by A. Botchkarev

Since Specialization

Citations

This map shows the geographic impact of A. Botchkarev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Botchkarev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Botchkarev more than expected).

Fields of papers citing papers by A. Botchkarev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Botchkarev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Botchkarev. The network helps show where A. Botchkarev may publish in the future.

Co-authorship network of co-authors of A. Botchkarev

This figure shows the co-authorship network connecting the top 25 collaborators of A. Botchkarev. A scholar is included among the top collaborators of A. Botchkarev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Botchkarev. A. Botchkarev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Optical properties of GaAs_1−xN_xalloys grown by molecular beam epitaxy 2006 ·The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics ·(unknown), A. Botchkarev, James A. Griffin, N. B. Smirnov, A. V. Govorkov, A. Y. Polyakov, J. M. Zavada, A. Christou, S. Noor Mohammad	3
2	Defects and localized states in MBE-grown GaAs_1−xN_xsolid solutions prepared by molecular-beam epitaxy 2003 ·The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics ·A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, В. Т. Бублик, A. Botchkarev, James A. Griffin, D. Johnstone, T. Steiner, S. Noor Mohammad	1
3	High-transconductance GaN MODFETs 2002 ·Özgür Aktaş, (unknown), Z. Fan, (unknown), A. Botchkarev, A. Salvador, B. Sverdlov, S. Noor Mohammad, H. Morkoç̌	5
4	Effects of the spontaneous polarization and piezoelectric fields on the luminescence spectra of GaN/Al0.15Ga0.85N quantum wells 2000 ·Physica E Low-dimensional Systems and Nanostructures ·(unknown), A. Passaseo, Massimo Longo, D. Cannoletta, R. Cingolani, M. Lomascolo, A. Bonfiglió, Aldo Di Carlo, Fabio Della Sala, Paolo Lugli, A. Botchkarev, H. Morkoç̌	10
5	Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy 1998 ·Journal of Applied Physics ·Wook Kim, A. Botchkarev, H. Morkoç̌, Z.-Q. Fang, D. C. Look, David J. Smith	10
6	Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO 1997 ·Applied Physics Letters ·F. Hamdani, A. Botchkarev, H. Tang, (unknown), H. Morkoç̌	37
7	Photoluminescence Properties Of Gan/AlGaN Multiple Quantum Well Microdisks 1997 ·MRS Proceedings ·R. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, Baowei Zhang, Lun Dai, H. Tang, A. Botchkarev, W. Kim, H. Morkoç̌	0
8	Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy 1996 ·Applied Physics Letters ·T. J. Schmidt, Xing Yang, W. Shan, J. J. Song, A. Salvador, W. Kim, Özgür Aktaş, A. Botchkarev, H. Morkoç̌	41
9	Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy breakdown → 1996 ·Applied Physics Letters ·G. Martin, A. Botchkarev, Angus Rockett, H. Morkoç	576
10	Tem Structure Characterization Of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts For n-GaN 1996 ·MRS Proceedings ·S. Ruvimov, Z. Liliental‐Weber, J. Washburn, K. J. Duxstad, (unknown), Z. Fan, S. Noor Mohammad, W. Kim, A. Botchkarev, (unknown)	4
11	Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistors 1996 ·Applied Physics Letters ·Zhifang Fan, S. Noor Mohammad, Özgür Aktaş, A. Botchkarev, A. Salvador, H. Morkoç̌	44
12	Optical studies of epitaxial GaN-based materials 1996 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown), W. Shan, T. J. Schmidt, Xing Yang, Arthur Fischer, Sung‐Ho Hwang, Bahman Taheri, B. Goldenberg, R. D. Horning, (unknown), W. Kim, Özgür Aktaş, A. Botchkarev, H. Morkoç̌	8
13	Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia 1996 ·Applied Physics Letters ·A. Salvador, (unknown), Özgür Aktaş, A. Botchkarev, (unknown), H. Morkoç	45
14	Very low resistance multilayer Ohmic contact to n-GaN 1996 ·Applied Physics Letters ·Zhifang Fan, S. Noor Mohammad, Wook Kim, Özgür Aktaş, A. Botchkarev, H. Morkoç	370
15	Ohmic contacts and schottky barriers to n-GaN 1996 ·Journal of Electronic Materials ·Z. Fan, S. Noor Mohammad, W. Kim, Özgür Aktaş, A. Botchkarev, (unknown), H. Morkoç̌, K. J. Duxstad, E. E. Häller	32
16	GaN based III–V nitrides by molecular beam epitaxy 1995 ·Journal of Crystal Growth ·H. Morkoç̌, A. Botchkarev, A. Salvador, B. Sverdlov	30
17	Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy 1995 ·Applied Physics Letters ·M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. Sverdlov, A. Botchkarev, H. Morkoç	30
18	Valence-band discontinuity between GaN and AIN measured by x-ray photoemission spectroscopy 1995 ·Journal of Electronic Materials ·G. Martin, S. Strite, A. Botchkarev, Anchal Agarwal, Angus Rockett, Walter R. L. Lambrecht, B. Segall, H. Morkoç̌	13
19	Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy 1994 ·Applied Physics Letters ·G. Martin, S. Strite, A. Botchkarev, Anchal Agarwal, Angus Rockett, H. Morkoç̌, Walter R. L. Lambrecht, B. Segall	192
20	GaAs metal insulator semiconductor capacitors and high transconductance metal insulator semiconductor field effect transistors 1994 ·Applied Physics Letters ·J. Reed, Z. Fan, Guangjun Gao, A. Botchkarev, H. Morkoç̌	25

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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