In‐Hwan Lee

6.8k citations

273 papers · 5.8k indexed · h-index 39

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 133
- GaN-based semiconductor devices and materials 132
Electronic, Optical and Magnetic Materials 117
- Ga2O3 and related materials 107

Co-authors: A. Y. Polyakov Yeon‐Tae Yu Periyayya Uthirakumar S. J. Pearton N. B. Smirnov Dung Van Dao Rizwan Khan E. B. Yakimov
Journals: Journal of Applied Physics (22 papers)Journal of Alloys and Compounds (21 papers)Applied Physics Letters (19 papers)Journal of Crystal Growth (16 papers)ECS Journal of Solid State Science and Technology (8 papers)
Partner nations: South Korea Russia United States

In The Last Decade

In‐Hwan Lee

266 papers receiving 5.7k citations

Peers

Countries citing papers authored by In‐Hwan Lee

Since Specialization

Citations

This map shows the geographic impact of In‐Hwan Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by In‐Hwan Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites In‐Hwan Lee more than expected).

Fields of papers citing papers by In‐Hwan Lee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by In‐Hwan Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by In‐Hwan Lee. The network helps show where In‐Hwan Lee may publish in the future.

Co-authors

The 25 scholars most cited alongside In‐Hwan Lee, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with In‐Hwan Lee Line = papers co-authored together In‐Hwan Lee links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Damage‐Free Organic Passivation Layer for Improved Optical and Electrical Performance of InGaN/GaN Blue Micro‐LEDs Advanced Functional Materials ·Juyeol Kim, Yeong‐Hoon Cho, Sang‐Bum Kim, Taehwan Kim, Jiwon Park, Periyayya Uthirakumar, Youson Kim, Bohyun Lee, Junyeong Yang, Sung Gap Im, In‐Hwan Lee	2025	2
2	Introducing Cu2O (111) phase on Cu(OH)2 nanorods integrated Pd-cocatalyst for boosting acetone selectivity via photoelectrochemical CO2RR Environmental Research ·Periyayya Uthirakumar, Dasom Kim, Dung Van Dao, Kai Chen, Chul‐Ho Yun, Youn Jeong Jang, In‐Hwan Lee	2024	5
3	Role of surface treatments and localized surface plasmon nanoparticles on internal quantum efficiency of 800 nm diameter blue GaN/InGaN nano light emitting diodes Journal of Alloys and Compounds ·In‐Hwan Lee, Yeong-Hoon Cho, L. A. Alexanyan, М. Л. Скориков, A.A. Vasil'ev, A.A. Romanov, N. R. Matros, А. I. Kochkova, A. Y. Polyakov, S. J. Pearton	2024	2
4	LaCeOx coupled N-doped graphene/Ru single-atoms as a binary-site catalyst for efficient hydrogen evolution based on hydrogen spillover Applied Catalysis B: Environmental ·Dung Van Dao, Hyuk Choi, Sunny Yadav, Juan D. Jiménez, C. K. Kim, Tuan Van Nguyen, Kai Chen, Periyayya Uthirakumar, Quyet Van Le, Sanjaya D. Senanayake, Hyun You Kim, In‐Hwan Lee	2023	28
5	Transport and trap states in proton irradiated ultra-thick κ-Ga2O3 Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·A. Y. Polyakov, В. И. Николаев, А. И. Печников, E. B. Yakimov, П. Б. Лагов, Ivan Shchemerov, A.A. Vasil'ev, А. I. Kochkova, А. В. Черных, In‐Hwan Lee, S. J. Pearton	2023	9
6	Platinum single-atom catalysts anchored on a heterostructure cupric oxide/copper foam for accelerating photoelectrochemical hydrogen evolution reaction Nano Energy ·Hoki Son, Ji‐Hwan Lee, Periyayya Uthirakumar, Dung Van Dao, Aloysius Soon, Yeji Lee, In‐Hwan Lee	2023	21
7	Oxidation-Induced Changes in the Lattice Structure of YSZ Deposited by EB-PVD in High-Vacuum Conditions Processes ·Gye-Won Lee, In‐Hwan Lee, Yoon-Suk Oh	2023	1
8	Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3 Journal of Alloys and Compounds ·A. Y. Polyakov, A.A. Vasil'ev, Ivan Shchemerov, А. В. Черных, Igor Shetinin, E.V. Zhevnerov, А. I. Kochkova, П. Б. Лагов, Andrey Miakonkikh, Yu. S. Pavlov, U. A. Kobets, In‐Hwan Lee, Andrej Kuznetsov, S. J. Pearton	2023	8
9	Evaluation of Bearing Strength of Self-Tapping Screws according to the Grain Direction of Domestic Pinus densiflora Journal of the Korean Wood Science and Technology ·In‐Hwan Lee, Keon-ho Kim, Kug-Bo Shim	2022	10
10	Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3 Journal of Applied Physics ·A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov, A.A. Vasil'ev, А. I. Kochkova, А. В. Черных, П. Б. Лагов, Yu. S. Pavlov, V. S. Stolbunov, Т. V. Kulevoy, I. V. Borzykh, In‐Hwan Lee, F. Ren, S. J. Pearton	2021	14
11	Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si Applied Physics Letters ·Geunhwan Ryu, Seungwan Woo, Soo Seok Kang, Rafael Jumar Chu, Jae-Hoon Han, In‐Hwan Lee, Daehwan Jung, Won Jun Choi	2020	11
12	Defects at the surface of β-Ga2O3 produced by Ar plasma exposure APL Materials ·A. Y. Polyakov, In‐Hwan Lee, N. B. Smirnov, E. B. Yakimov, Ivan Shchemerov, А. В. Черных, А. I. Kochkova, A.A. Vasil'ev, Patrick H. Carey, F. Ren, David J. Smith, S. J. Pearton	2019	50
13	Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress Journal of Alloys and Compounds ·П. С. Вергелес, В. И. Орлов, A. Y. Polyakov, E. B. Yakimov, Taehwan Kim, In‐Hwan Lee	2018	18
14	Recombination properties of dislocations in GaN Journal of Applied Physics ·E. B. Yakimov, A. Y. Polyakov, In‐Hwan Lee, S. J. Pearton	2017	26
15	Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy Applied Physics Letters ·In‐Hwan Lee, A. Y. Polyakov, E. B. Yakimov, N. B. Smirnov, Ivan Shchemerov, С. А. Тарелкин, S. Didenko, K. I. Tapero, R. A. Zinovyev, S. J. Pearton	2017	28
16	Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments Journal of Applied Physics ·In‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov, П. Б. Лагов, R. A. Zinov'ev, E. B. Yakimov, К. Д. Щербачев, S. J. Pearton	2017	32
17	Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs Applied Physics Letters ·In‐Hwan Lee, A. Y. Polyakov, Sung-Min Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, Ivan Shchemerov, R. A. Zinovyev, С. А. Тарелкин, S. J. Pearton	2017	20
18	Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN Journal of Applied Physics ·In‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov, E. B. Yakimov, С. А. Тарелкин, Andrei V. Turutin, I. V. Shemerov, S. J. Pearton	2016	25
19	Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy Journal of Applied Physics ·A. Y. Polyakov, N. B. Smirnov, E. B. Yakimov, In‐Hwan Lee, S. J. Pearton	2016	26
20	P‐24: Design of Low‐Cost 2.2‐inch qVGA LTPS TFT‐LCD Panel SID Symposium Digest of Technical Papers ·Min‐Seok Shin, Jung‐Whan Choi, Yong‐Jae Kim, K. S. Kim, In‐Hwan Lee, Oh‐Kyong Kwon, Cheol‐Min Kim, Joon‐Ha Park, Il‐Gon Kim, Chi‐Woo Kim	2007	2

About In‐Hwan Lee

In‐Hwan Lee is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment and Nuclear Energy and Engineering, having authored 273 papers that have together received 5.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (132 papers), ZnO doping and properties (117 papers), Ga2O3 and related materials (107 papers), Advanced Photocatalysis Techniques (47 papers), Semiconductor materials and devices (35 papers), Semiconductor Quantum Structures and Devices (28 papers), Gas Sensing Nanomaterials and Sensors (26 papers) and Copper-based nanomaterials and applications (21 papers). The work is most often cited by research in Condensed Matter Physics (2.3k citations), Electronic, Optical and Magnetic Materials (2.0k citations), Renewable Energy, Sustainability and the Environment (1.2k citations), Materials Chemistry (3.4k citations) and Bioengineering (346 citations). In‐Hwan Lee has collaborated with scholars based in South Korea, Russia and United States. Frequent co-authors include A. Y. Polyakov, Yeon‐Tae Yu, Periyayya Uthirakumar, S. J. Pearton, N. B. Smirnov, Dung Van Dao, Rizwan Khan, E. B. Yakimov, Lee‐Woon Jang and Cheul‐Ro Lee. Their work appears in journals such as Journal of Applied Physics, Journal of Alloys and Compounds, Applied Physics Letters, Journal of Crystal Growth and ECS Journal of Solid State Science and Technology.

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