Shunro Fuke

2.4k total citations
75 papers, 2.1k citations indexed

About

Shunro Fuke is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Shunro Fuke has authored 75 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 38 papers in Condensed Matter Physics and 38 papers in Materials Chemistry. Recurrent topics in Shunro Fuke's work include GaN-based semiconductor devices and materials (38 papers), Semiconductor Quantum Structures and Devices (35 papers) and ZnO doping and properties (28 papers). Shunro Fuke is often cited by papers focused on GaN-based semiconductor devices and materials (38 papers), Semiconductor Quantum Structures and Devices (35 papers) and ZnO doping and properties (28 papers). Shunro Fuke collaborates with scholars based in Japan, United States and Czechia. Shunro Fuke's co-authors include Masatomo Sumiya, Kohji Ohtsuka, Hideomi Koinuma, M. Kawasaki, Yasushi Takano, K. Yoshimura, Hisashi Yoshikawa, Takahiro Kawashima, Sadao Adachi and Dongsheng Li and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Shunro Fuke

74 papers receiving 2.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shunro Fuke Japan 22 1.3k 1.2k 977 902 500 75 2.1k
Shih‐Chang Shei Taiwan 23 1.5k 1.1× 1.0k 0.8× 657 0.7× 876 1.0× 503 1.0× 104 1.9k
C. R. Abernathy United States 23 1.0k 0.8× 987 0.8× 604 0.6× 815 0.9× 366 0.7× 66 1.7k
E. J. Tarsa United States 17 1.8k 1.4× 1.2k 1.0× 1.1k 1.1× 980 1.1× 582 1.2× 31 2.4k
E. Iliopoulos Greece 27 1.5k 1.1× 819 0.7× 823 0.8× 622 0.7× 530 1.1× 86 1.9k
H. Angerer Germany 21 1.6k 1.3× 845 0.7× 737 0.8× 765 0.8× 623 1.2× 33 2.1k
M. Laügt France 27 1.8k 1.3× 1.3k 1.1× 1.2k 1.2× 820 0.9× 749 1.5× 67 2.5k
P. Bogusławski Poland 24 1.3k 1.0× 1.6k 1.3× 1.1k 1.2× 994 1.1× 965 1.9× 76 2.7k
J. Christen Germany 20 1.2k 0.9× 2.1k 1.7× 1.5k 1.5× 1.3k 1.5× 478 1.0× 66 2.9k
Xu‐Qiang Shen Japan 23 1.1k 0.8× 668 0.5× 614 0.6× 539 0.6× 537 1.1× 98 1.6k
S. A. Nikishin United States 28 1.9k 1.4× 874 0.7× 810 0.8× 1.1k 1.3× 942 1.9× 117 2.5k

Countries citing papers authored by Shunro Fuke

Since Specialization
Citations

This map shows the geographic impact of Shunro Fuke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shunro Fuke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shunro Fuke more than expected).

Fields of papers citing papers by Shunro Fuke

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shunro Fuke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shunro Fuke. The network helps show where Shunro Fuke may publish in the future.

Co-authorship network of co-authors of Shunro Fuke

This figure shows the co-authorship network connecting the top 25 collaborators of Shunro Fuke. A scholar is included among the top collaborators of Shunro Fuke based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shunro Fuke. Shunro Fuke is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sumiya, Masatomo, Naoki Ohashi, Masaki Takeguchi, et al.. (2010). Fabrication and hard X-ray photoemission analysis of photocathodes with sharp solar-blind sensitivity using AlGaN films grown on Si substrates. Applied Surface Science. 256(14). 4442–4446. 42 indexed citations
2.
Takano, Yasushi, Takuya Okamoto, Tatsuya Takagi, & Shunro Fuke. (2009). Influence of PH3 Preflow Time on Initial Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy. IEICE Transactions on Electronics. E92-C(12). 1443–1448. 6 indexed citations
3.
Matsumura, Hisashi, Shunro Fuke, Takayuki Tamaki, et al.. (2008). Selective growth of GaN on sapphire substrates treated with focused femtosecond laser pulses. Journal of Crystal Growth. 310(24). 5278–5281. 3 indexed citations
4.
Takano, Yasushi, et al.. (2005). Temperature dependence of threading dislocation density in In0.2Ga0.8As layers grown on GaAs substrates by metalorganic-vapor phase epitaxy. Journal of Crystal Growth. 282(1-2). 36–44. 3 indexed citations
5.
Takano, Yasushi, et al.. (2004). Metalorganic Vapor Phase Epitaxy of InAs Layers on GaAs Substrates Using Low-Temperature Growth of InGaAs Graded Buffer Layers. Japanese Journal of Applied Physics. 43(7B). L944–L944. 8 indexed citations
6.
Takano, Yasushi, et al.. (2002). Low temperature growth of InGaAs layers on misoriented GaAs substrates by metalorganic vapor phase epitaxy. Applied Physics Letters. 80(12). 2054–2056. 10 indexed citations
7.
Li, Dongsheng, Masatomo Sumiya, Shunro Fuke, et al.. (2001). Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy. Journal of Applied Physics. 90(8). 4219–4223. 300 indexed citations
8.
Sumiya, Masatomo, K. Yoshimura, Takahiro Ito, et al.. (2000). Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate. Journal of Applied Physics. 88(2). 1158–1165. 120 indexed citations
9.
Sumiya, Masatomo, K. Yoshimura, Kohji Ohtsuka, & Shunro Fuke. (2000). Dependence of impurity incorporation on the polar direction of GaN film growth. Applied Physics Letters. 76(15). 2098–2100. 148 indexed citations
10.
Takano, Yasushi, et al.. (2000). Structural Investigation of Metalorganic Chemical-Vapor-Deposition-Grown InGaAs Layers on Misoriented GaAs Substrates. Japanese Journal of Applied Physics. 39(9A). L901–L901. 9 indexed citations
11.
Li, Dongsheng, Masatomo Sumiya, K. Yoshimura, et al.. (2000). Characteristics of the GaN Polar Surface during an Etching Process in KOH Solution. physica status solidi (a). 180(1). 357–362. 32 indexed citations
12.
Sumiya, Masatomo, et al.. (1999). Growth of GaN layer on 6H-SiC substrates using a GaN buffer layer. 99(64). 31–36. 1 indexed citations
13.
Sumiya, Masatomo, Shunro Fuke, Tomonori Kato, et al.. (1998). Properties of amorphous carbon films characterized by laser desorption time of flight mass spectroscopy. Journal of Non-Crystalline Solids. 227-230. 632–635.
14.
Sumiya, Masatomo, Tsuyoshi Ohnishi, M. Tanaka, et al.. (1998). Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire. MRS Proceedings. 537. 1 indexed citations
15.
Takano, Yasushi, et al.. (1996). Two-step growth of InP on GaAs substrates by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 169(4). 621–624. 18 indexed citations
16.
Fuke, Shunro, et al.. (1990). Strain relaxation of GaAs layers grown on heavily In-doped substrates by organometallic vapor phase epitaxy. Journal of Applied Physics. 68(3). 1013–1017. 4 indexed citations
17.
Fuke, Shunro, et al.. (1989). Some properties of organometallic vapor-phase epitaxial grown GaAs layers on In-doped GaAs substrates. Journal of Applied Physics. 65(10). 3877–3882. 3 indexed citations
18.
Fuke, Shunro, et al.. (1989). Substrate effect on the deposition of Zn3P2 thin films prepared by a hot-wall method. Journal of Applied Physics. 65(2). 564–566. 10 indexed citations
19.
Fuke, Shunro, et al.. (1986). Some properties of Zn3P2 polycrystalline films prepared by hot-wall deposition. Journal of Applied Physics. 60(7). 2368–2371. 16 indexed citations
20.
Fuke, Shunro, et al.. (1986). Indium doping effects on vapor-phase growth of ZnS on GaP. Journal of Applied Physics. 59(5). 1761–1763. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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