E. E. Zavarin

1.1k total citations
124 papers, 898 citations indexed

About

E. E. Zavarin is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, E. E. Zavarin has authored 124 papers receiving a total of 898 indexed citations (citations by other indexed papers that have themselves been cited), including 115 papers in Condensed Matter Physics, 57 papers in Atomic and Molecular Physics, and Optics and 50 papers in Electrical and Electronic Engineering. Recurrent topics in E. E. Zavarin's work include GaN-based semiconductor devices and materials (114 papers), Semiconductor Quantum Structures and Devices (48 papers) and Ga2O3 and related materials (36 papers). E. E. Zavarin is often cited by papers focused on GaN-based semiconductor devices and materials (114 papers), Semiconductor Quantum Structures and Devices (48 papers) and Ga2O3 and related materials (36 papers). E. E. Zavarin collaborates with scholars based in Russia, France and United States. E. E. Zavarin's co-authors include W. V. Lundin, A. F. Tsatsul’nikov, A. V. Sakharov, A. E. Nikolaev, M. A. Yagovkina, P. N. Brunkov, Р.А. Талалаев, E.V. Yakovlev, A. Usikov and V. Yu. Davydov and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Letters.

In The Last Decade

E. E. Zavarin

114 papers receiving 843 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. E. Zavarin Russia 16 682 355 348 306 300 124 898
J.J. Zhu China 17 802 1.2× 329 0.9× 274 0.8× 378 1.2× 410 1.4× 71 926
N. S. Averkiev Russia 14 586 0.9× 760 2.1× 388 1.1× 492 1.6× 274 0.9× 115 1.2k
Brianna Klein United States 20 513 0.8× 425 1.2× 817 2.3× 232 0.8× 344 1.1× 68 1.1k
Mark Teepe United States 17 725 1.1× 510 1.4× 389 1.1× 213 0.7× 279 0.9× 55 966
Shigeru Nakagawa United States 17 541 0.8× 617 1.7× 850 2.4× 262 0.9× 198 0.7× 75 1.4k
D.W. Treat United States 18 479 0.7× 670 1.9× 690 2.0× 199 0.7× 146 0.5× 72 1.0k
R. Langer Belgium 17 641 0.9× 548 1.5× 762 2.2× 306 1.0× 293 1.0× 87 1.2k
C. Bru‐Chevallier France 17 505 0.7× 725 2.0× 705 2.0× 357 1.2× 180 0.6× 75 1.1k
E. Litwin‐Staszewska Poland 23 1.2k 1.7× 908 2.6× 759 2.2× 608 2.0× 541 1.8× 103 1.7k
S. Elhamri United States 19 716 1.0× 906 2.6× 1.0k 2.9× 487 1.6× 390 1.3× 83 1.6k

Countries citing papers authored by E. E. Zavarin

Since Specialization
Citations

This map shows the geographic impact of E. E. Zavarin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. E. Zavarin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. E. Zavarin more than expected).

Fields of papers citing papers by E. E. Zavarin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. E. Zavarin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. E. Zavarin. The network helps show where E. E. Zavarin may publish in the future.

Co-authorship network of co-authors of E. E. Zavarin

This figure shows the co-authorship network connecting the top 25 collaborators of E. E. Zavarin. A scholar is included among the top collaborators of E. E. Zavarin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. E. Zavarin. E. E. Zavarin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sakharov, A. V., et al.. (2024). Stress Analysis of GaN-Based Heterostructures on Silicon Substrates. Semiconductors. 58(2). 99–102. 5 indexed citations
2.
Ivanov, A. А., V. V. Chaldyshev, E. E. Zavarin, et al.. (2023). Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure. Applied Physics Letters. 123(12).
3.
Ivanov, A. А., V. V. Chaldyshev, E. E. Zavarin, et al.. (2023). A GaN/AlGaN Resonance Bragg Structure. Bulletin of the Russian Academy of Sciences Physics. 87(6). 782–785.
4.
Zavarin, E. E., et al.. (2023). AlGaN HEMT Structures Grown on Miscut Si(111) Wafers. Materials. 16(12). 4265–4265. 1 indexed citations
5.
Ivanov, A. А., V. V. Chaldyshev, E. E. Zavarin, et al.. (2023). Critical Disorder in InGaN/GaN Resonant Bragg Structures. Bulletin of the Russian Academy of Sciences Physics. 87(6). 853–856.
6.
Ivanov, A. А., V. V. Chaldyshev, E. E. Zavarin, et al.. (2022). Critical spatial disorder in InGaN resonant Bragg structures. Applied Physics Letters. 121(4). 3 indexed citations
7.
Sakharov, A. V., et al.. (2021). Determination of hole diffusion length in n-GaN. Journal of Physics Conference Series. 2086(1). 12075–12075. 2 indexed citations
8.
Sakharov, A. V., et al.. (2021). Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures. Journal of Physics Conference Series. 2103(1). 12202–12202. 3 indexed citations
9.
Yakovlev, E.V., et al.. (2016). Stress‐dislocation management in MOVPE of GaN on SiC wafers. physica status solidi (a). 213(10). 2759–2763. 6 indexed citations
10.
Chaldyshev, V. V., W. V. Lundin, A. V. Sakharov, et al.. (2015). Resonant Bragg structures based on III-nitrides. Journal of materials research/Pratt's guide to venture capital sources. 30(5). 603–608. 7 indexed citations
11.
Lundin, W. V., A. E. Nikolaev, A. V. Sakharov, et al.. (2014). Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers. Semiconductors. 48(1). 53–57. 9 indexed citations
12.
Ustinov, V. M., A. F. Tsatsul’nikov, W. V. Lundin, et al.. (2012). Monolithic white LEDs: Approaches, technology, design. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 6(3). 501–504. 1 indexed citations
13.
Zavarin, E. E., A. F. Tsatsul’nikov, W. V. Lundin, et al.. (2010). Structural and optical properties of InAlN/GaN distributed Bragg reflectors. Semiconductors. 44(7). 949–953. 3 indexed citations
14.
Sakharov, A. V., W. V. Lundin, E. E. Zavarin, et al.. (2009). Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs. Semiconductors. 43(6). 812–817. 13 indexed citations
15.
Tsatsul’nikov, A. F., et al.. (2008). Energy characteristics of excitons in InGaN/GaN heterostructures. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6995. 699515–699515. 1 indexed citations
16.
Терещенко, О. Е., et al.. (2004). Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity. Physics of the Solid State. 46(10). 1949–1953. 44 indexed citations
17.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2003). Deep levels studies of AlGaN/GaN superlattices. Solid-State Electronics. 47(4). 671–676. 11 indexed citations
18.
Shmidt, N. M., А. Г. Колмаков, W. V. Lundin, et al.. (2002). EBIC Characterization of III–Nitride Structures Using Multifractal Parameterization. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 457–460. 3 indexed citations
19.
Lundin, W. V., A. V. Sakharov, A. F. Tsatsul’nikov, et al.. (2001). Growth and Characterization of AlGaN/GaN Superlattices. physica status solidi (a). 188(2). 885–888. 7 indexed citations
20.
Anderson, Arthur B., et al.. (1960). The Effect of Drying Conditions and Certain Pretreatments on Seasoning Stain in California Redwood. Forest Science. 6(4). 315–330. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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