H. Helava

1.6k total citations
79 papers, 1.3k citations indexed

About

H. Helava is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, H. Helava has authored 79 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Condensed Matter Physics, 35 papers in Electronic, Optical and Magnetic Materials and 31 papers in Electrical and Electronic Engineering. Recurrent topics in H. Helava's work include GaN-based semiconductor devices and materials (56 papers), Ga2O3 and related materials (32 papers) and ZnO doping and properties (23 papers). H. Helava is often cited by papers focused on GaN-based semiconductor devices and materials (56 papers), Ga2O3 and related materials (32 papers) and ZnO doping and properties (23 papers). H. Helava collaborates with scholars based in Russia, United States and South Korea. H. Helava's co-authors include Yu.N. Makarov, A. Usikov, M. A. Reshchikov, D. O. Demchenko, E. N. Mokhov, J. D. McNamara, A. D. Roenkov, M.G. Ramm, T. Yu. Chemekova and A.S. Segal and has published in prestigious journals such as Physical Review Letters, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

H. Helava

76 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Helava Russia 20 1.0k 606 583 487 262 79 1.3k
M. Smith United States 19 891 0.9× 451 0.7× 574 1.0× 585 1.2× 535 2.0× 69 1.4k
H. De Witte Germany 19 756 0.7× 423 0.7× 432 0.7× 600 1.2× 353 1.3× 97 1.3k
R. Dahal United States 22 1.1k 1.1× 802 1.3× 1.3k 2.2× 722 1.5× 395 1.5× 54 2.3k
P. Berberich Germany 21 875 0.9× 350 0.6× 484 0.8× 326 0.7× 551 2.1× 54 1.3k
A. Usoskin Germany 20 919 0.9× 296 0.5× 340 0.6× 371 0.8× 163 0.6× 87 1.2k
R. Semerad Germany 20 1.0k 1.0× 294 0.5× 282 0.5× 374 0.8× 289 1.1× 53 1.2k
С. В. Иванов Russia 18 1.4k 1.3× 793 1.3× 883 1.5× 725 1.5× 1.0k 3.9× 109 2.1k
S.E. Babcock United States 22 781 0.8× 345 0.6× 574 1.0× 487 1.0× 679 2.6× 84 1.6k
B. H. Moeckly United States 19 1.1k 1.1× 457 0.8× 356 0.6× 279 0.6× 523 2.0× 62 1.4k
J. A. Parrell United States 27 1.4k 1.4× 455 0.8× 170 0.3× 315 0.6× 250 1.0× 62 1.8k

Countries citing papers authored by H. Helava

Since Specialization
Citations

This map shows the geographic impact of H. Helava's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Helava with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Helava more than expected).

Fields of papers citing papers by H. Helava

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Helava. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Helava. The network helps show where H. Helava may publish in the future.

Co-authorship network of co-authors of H. Helava

This figure shows the co-authorship network connecting the top 25 collaborators of H. Helava. A scholar is included among the top collaborators of H. Helava based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Helava. H. Helava is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Reshchikov, M. A., Ü. Özgür, D. O. Demchenko, et al.. (2019). Unusual properties of the RY3 center in GaN. Physical review. B.. 100(4). 19 indexed citations
2.
Reshchikov, M. A., J. D. McNamara, H. Helava, A. Usikov, & Yu.N. Makarov. (2018). Two yellow luminescence bands in undoped GaN. Scientific Reports. 8(1). 8091–8091. 58 indexed citations
3.
Reshchikov, M. A., A. Usikov, H. Helava, et al.. (2017). Evaluation of the concentration of point defects in GaN. Scientific Reports. 7(1). 9297–9297. 58 indexed citations
4.
Reshchikov, M. A., J. D. McNamara, Mykyta Toporkov, et al.. (2016). Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence. Scientific Reports. 6(1). 37511–37511. 41 indexed citations
5.
Tarasov, S A, et al.. (2015). The efficiency of UV LEDs based on GaN/AlGaN heterostructures. Journal of Physics Conference Series. 661. 12038–12038.
6.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2014). DEEP TRAPS SPECTRA IN UNDOPED GAN FILMS GROWN BY HYDRIDE VAPOR PHASE EPITAXY UNDER VARIOUS CONDITIONS. American Journal of Applied Sciences. 11(9). 1714–1721. 4 indexed citations
7.
Lee, In‐Hwan, A. Y. Polyakov, N. B. Smirnov, et al.. (2014). Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy. Journal of Applied Physics. 115(22). 37 indexed citations
8.
Polyakov, A. Y., N. B. Smirnov, E. B. Yakimov, et al.. (2014). Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy. Journal of Alloys and Compounds. 617. 200–206. 12 indexed citations
9.
Karpov, S. Yu., M.S. Ramm, E. N. Mokhov, et al.. (2004). Modeling of facet formation in SiC bulk crystal growth. Journal of Crystal Growth. 266(1-3). 313–319. 11 indexed citations
10.
Karpov, S. Yu., M.S. Ramm, E. N. Mokhov, et al.. (2004). Faceted Growth of SiC Bulk Crystals. Materials science forum. 457-460. 63–66. 2 indexed citations
11.
Nikishin, S. A., B. Borisov, A. Chandolu, et al.. (2004). Short-period superlattices of AlN∕Al0.08Ga0.92N grown on AlN substrates. Applied Physics Letters. 85(19). 4355–4357. 19 indexed citations
12.
Owens, Alan, et al.. (2003). Optical characterization of ultra‐pure GaAs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1024–1027. 10 indexed citations
13.
Mokhov, E. N., A. D. Roenkov, Yu. A. Vodakov, et al.. (2003). Growth of AlN Bulk Crystals by Sublimation Sandwich Method. Materials science forum. 433-436. 979–982. 5 indexed citations
14.
Grekhov, I. V., et al.. (2003). Ion-beam mixing at Ni/n-6H–SiC interface under irradiation by H+-ions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 215(3-4). 385–388. 4 indexed citations
15.
Mokhov, E. N., M.G. Ramm, A. D. Roenkov, et al.. (2003). Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation. Materials science forum. 433-436. 29–32. 7 indexed citations
16.
Karpov, S. Yu., M.S. Ramm, E. N. Mokhov, et al.. (2002). Modeling Analysis of Free-Spreading Sublimation Growth of SiC Crystals. MRS Proceedings. 742. 3 indexed citations
17.
Gassmann, Andrea, T. Suski, N. Newman, et al.. (1996). Homoepitaxial growth of GaN using molecular beam epitaxy. Journal of Applied Physics. 80(4). 2195–2198. 30 indexed citations
18.
Helava, H., et al.. (1991). <title>High-power waveform generation using photoconductive switches</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1378. 60–69. 4 indexed citations
19.
Creedon, J., et al.. (1985). The reflex switch: A new vacuum opening switch for use with magnetic energy storge. Journal of Applied Physics. 57(5). 1582–1588. 5 indexed citations
20.
Coppi, B., A. Gondhalekar, H. Helava, et al.. (1977). High-density and collisional plasma regimes in the Alcator programme. 1. 247–256. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by M. Smith Breakdown of academic impact, for papers by H. De Witte Breakdown of academic impact, for papers by R. Dahal Breakdown of academic impact, for papers by P. Berberich Breakdown of academic impact, for papers by A. Usoskin Breakdown of academic impact, for papers by R. Semerad Breakdown of academic impact, for papers by С. В. Иванов Breakdown of academic impact, for papers by S.E. Babcock Breakdown of academic impact, for papers by B. H. Moeckly Breakdown of academic impact, for papers by J. A. Parrell
Rankless by CCL
2026