И.П. Никитина

1.3k total citations
57 papers, 1.0k citations indexed

About

И.П. Никитина is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, И.П. Никитина has authored 57 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 26 papers in Condensed Matter Physics and 21 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in И.П. Никитина's work include GaN-based semiconductor devices and materials (26 papers), Silicon Carbide Semiconductor Technologies (25 papers) and Ga2O3 and related materials (18 papers). И.П. Никитина is often cited by papers focused on GaN-based semiconductor devices and materials (26 papers), Silicon Carbide Semiconductor Technologies (25 papers) and Ga2O3 and related materials (18 papers). И.П. Никитина collaborates with scholars based in Russia, United States and Ukraine. И.П. Никитина's co-authors include Konstantin Vassilevski, V. Dmitriev, V. Yu. Davydov, A. N. Smirnov, N. S. Averkiev, M. A. Jacobson, O. Semchinova, I. N. Goncharuk, D. K. Nelson and Anatoli Polkovnikov and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

И.П. Никитина

51 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
И.П. Никитина Russia 16 606 504 462 417 251 57 1.0k
Martin Frentrup United Kingdom 19 684 1.1× 277 0.5× 330 0.7× 391 0.9× 158 0.6× 65 825
Ziguang Ma China 13 506 0.8× 387 0.8× 436 0.9× 275 0.7× 266 1.1× 59 833
Hironori Okumura Japan 16 518 0.9× 394 0.8× 436 0.9× 539 1.3× 85 0.3× 48 849
Xiantong Zheng China 14 434 0.7× 217 0.4× 431 0.9× 324 0.8× 168 0.7× 57 730
E. Richter Germany 17 724 1.2× 418 0.8× 445 1.0× 456 1.1× 228 0.9× 69 919
U. Chowdhury United States 19 892 1.5× 587 1.2× 283 0.6× 497 1.2× 257 1.0× 45 1.1k
K. Domen Japan 20 593 1.0× 593 1.2× 494 1.1× 302 0.7× 509 2.0× 42 1.1k
T. Böttcher Germany 12 865 1.4× 293 0.6× 482 1.0× 394 0.9× 266 1.1× 33 971
Zhonghai Yu United States 18 380 0.6× 665 1.3× 736 1.6× 385 0.9× 187 0.7× 50 1.1k
Yingfeng He China 12 396 0.7× 300 0.6× 325 0.7× 233 0.6× 160 0.6× 35 645

Countries citing papers authored by И.П. Никитина

Since Specialization
Citations

This map shows the geographic impact of И.П. Никитина's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by И.П. Никитина with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites И.П. Никитина more than expected).

Fields of papers citing papers by И.П. Никитина

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by И.П. Никитина. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by И.П. Никитина. The network helps show where И.П. Никитина may publish in the future.

Co-authorship network of co-authors of И.П. Никитина

This figure shows the co-authorship network connecting the top 25 collaborators of И.П. Никитина. A scholar is included among the top collaborators of И.П. Никитина based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with И.П. Никитина. И.П. Никитина is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Никитина, И.П., et al.. (2025). NEW UKRAINIAN SCHOOL: AI IMPLEMENTATION IN EDUCATION. 67(6). 101–108.
2.
Никитина, И.П., et al.. (2024). THE IMPACT OF AI ON TEACHERS: SUPPORT OR REPLACEMENT?. 65(4). 93–99. 1 indexed citations
3.
Никитина, И.П., et al.. (2024). CHAT GPT IN THE PARADIGM OF MODERN EDUCATION. Polonia University Scientific Journal. 61(6). 100–106. 1 indexed citations
4.
Lebedev, A. А., V. Yu. Davydov, С. П. Лебедев, et al.. (2023). Study of Heavily Doped n-3C-SiC Epitaxial Films Grown on 6H-SiC Semi-Insulating Substrates by Sublimation Method. Semiconductors. 57(2). 121–124. 1 indexed citations
5.
Никитина, И.П., et al.. (2023). GLOBALIZATION OF EDUCATION: VITAL APPROACHES IN STEM EDUCATION. Polonia University Scientific Journal. 59(4). 73–80.
6.
Никитина, И.П., et al.. (2023). GLOBALIZATION OF EDUCATION: MODERN EXPERIENCE. Polonia University Scientific Journal. 56(1). 216–223. 4 indexed citations
7.
Mynbaeva, M. G., et al.. (2023). Templates for Homoepitaxial Growth of 3C-SiC Obtained by Direct Bonding of Silicon Carbide Wafers of Differing Polytype. Semiconductors. 57(6). 305–309. 1 indexed citations
8.
Никитина, И.П., et al.. (2022). CHALLENGES OF STEM EDUCATION. KELM (Knowledge Education Law Management). 34–38.
9.
Никитина, И.П., et al.. (2022). IMPLEMENTATION OF STEM EDUCATION SYSTEM IN UKRAINE. Polonia University Scientific Journal. 51(2). 108–114. 2 indexed citations
10.
Kalinina, E. V., et al.. (2022). Irradiation with Argon Ions of Cr/4H-SiC Photodetectors. Semiconductors. 56(3). 184–188. 2 indexed citations
11.
Kalinina, E. V., et al.. (2019). Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers. Semiconductors. 53(6). 844–849. 6 indexed citations
12.
Lebedev, A. А., et al.. (2019). A Study of the Influence Exerted by Structural Defects on Photoluminescence Spectra in n-3C-SiC. Technical Physics Letters. 45(6). 557–559. 2 indexed citations
13.
Никитина, И.П., et al.. (2017). Model of One-Zone Direct-Current Electric Drive with Elastic Coupling. Institutional Repository National Mining University of Ukraine (National Mining University of Ukraine).
14.
Николаев, В. И., А. И. Печников, С. И. Степанов, et al.. (2016). Epitaxial growth of (2¯01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy. Materials Science in Semiconductor Processing. 47. 16–19. 56 indexed citations
15.
Polyakov, A. Y., A. V. Govorkov, N. B. Smirnov, et al.. (2001). Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SiC by hydride vapor phase epitaxy. Solid-State Electronics. 45(2). 249–253. 9 indexed citations
16.
Melnik, Yu., D. Tsvetkov, А. И. Печников, et al.. (2001). Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy. physica status solidi (a). 188(1). 463–466. 21 indexed citations
17.
Polyakov, A. Y., N. B. Smirnov, S. J. Pearton, et al.. (2001). Fermi level dependence of hydrogen diffusivity in GaN. Applied Physics Letters. 79(12). 1834–1836. 34 indexed citations
18.
Saddow, Stephen E., M. G. Mynbaeva, И.П. Никитина, et al.. (2000). Structural Characterization Of Sic Epitaxial Layers Grown On Porous Sic Substrates. MRS Proceedings. 640. 2 indexed citations
19.
Vassilevski, Konstantin, et al.. (1997). Ti/Ni ohmic contacts to n-type gallium nitride. Materials Science and Engineering B. 43(1-3). 292–295. 6 indexed citations
20.
Никитина, И.П., et al.. (1995). Structural analysis of 4H-SiC layers grown on 6H-SiC and 15R-SiC substrates. Journal of Crystal Growth. 152(4). 292–299. 2 indexed citations

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