N. M. Shmidt

570 total citations
70 papers, 437 citations indexed

About

N. M. Shmidt is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, N. M. Shmidt has authored 70 papers receiving a total of 437 indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Condensed Matter Physics, 37 papers in Atomic and Molecular Physics, and Optics and 35 papers in Electrical and Electronic Engineering. Recurrent topics in N. M. Shmidt's work include GaN-based semiconductor devices and materials (43 papers), Semiconductor Quantum Structures and Devices (29 papers) and Semiconductor materials and devices (17 papers). N. M. Shmidt is often cited by papers focused on GaN-based semiconductor devices and materials (43 papers), Semiconductor Quantum Structures and Devices (29 papers) and Semiconductor materials and devices (17 papers). N. M. Shmidt collaborates with scholars based in Russia, United States and South Korea. N. M. Shmidt's co-authors include E. B. Yakimov, В. В. Ратников, M. E. Levinshteĭn, A. Usikov, M. M. Sobolev, W. V. Lundin, A. Y. Polyakov, S. J. Pearton, N. B. Smirnov and А. Г. Колмаков and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

N. M. Shmidt

67 papers receiving 411 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. M. Shmidt Russia 12 304 213 191 136 105 70 437
Kamran Forghani United States 15 279 0.9× 228 1.1× 274 1.4× 202 1.5× 138 1.3× 44 531
L. Considine Ireland 12 316 1.0× 282 1.3× 344 1.8× 270 2.0× 159 1.5× 40 638
Kartik Senapati India 12 276 0.9× 157 0.7× 92 0.5× 190 1.4× 177 1.7× 48 454
S. Ruffenach France 12 305 1.0× 263 1.2× 201 1.1× 278 2.0× 178 1.7× 27 542
Mark Beeler France 12 303 1.0× 193 0.9× 123 0.6× 136 1.0× 137 1.3× 15 387
J. S. Horwitz United States 12 191 0.6× 141 0.7× 146 0.8× 229 1.7× 163 1.6× 31 446
L. E. C. van de Leemput Netherlands 12 298 1.0× 360 1.7× 147 0.8× 104 0.8× 100 1.0× 22 604
M. Razeghi France 10 191 0.6× 246 1.2× 266 1.4× 144 1.1× 151 1.4× 32 471
Q. K. Xue Japan 8 132 0.4× 260 1.2× 170 0.9× 144 1.1× 51 0.5× 15 431
R. Opitz Germany 7 88 0.3× 221 1.0× 179 0.9× 149 1.1× 74 0.7× 14 392

Countries citing papers authored by N. M. Shmidt

Since Specialization
Citations

This map shows the geographic impact of N. M. Shmidt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. M. Shmidt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. M. Shmidt more than expected).

Fields of papers citing papers by N. M. Shmidt

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. M. Shmidt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. M. Shmidt. The network helps show where N. M. Shmidt may publish in the future.

Co-authorship network of co-authors of N. M. Shmidt

This figure shows the co-authorship network connecting the top 25 collaborators of N. M. Shmidt. A scholar is included among the top collaborators of N. M. Shmidt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. M. Shmidt. N. M. Shmidt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Polyakov, A. Y., I. Shchemerov, A.A. Vasil'ev, et al.. (2024). Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation. APL Materials. 12(12). 1 indexed citations
2.
Shmidt, N. M., I. A. Eliseyev, С. П. Лебедев, et al.. (2023). Quality Assessment of Processed Graphene Chips for Biosensor Application. Materials. 16(16). 5628–5628. 1 indexed citations
3.
Карташова, А. П., et al.. (2023). Contribution of Zone Fluctuation Potential and Disordering of Heteroboundaries to the Decreased Efficiency of Nitride-Based Leds. Journal of Applied Spectroscopy. 90(1). 24–28. 1 indexed citations
4.
Shmidt, N. M., A. Usikov, А. В. Нащекин, et al.. (2021). Investigation of the Morphology and Electrical Properties of Graphene Used in the Development of Biosensors for Detection of Influenza Viruses. Biosensors. 12(1). 8–8. 3 indexed citations
5.
Shmidt, N. M., et al.. (2020). Temperature-Dependent Decrease in Efficiency in Power Blue InGaN/GaN LEDs. Technical Physics Letters. 46(12). 1253–1256. 1 indexed citations
6.
Shmidt, N. M., et al.. (2019). The impact of the surface morphology on optical features of the green emitting InGaN/GaN multiple quantum wells. Journal of Crystal Growth. 520. 82–84. 4 indexed citations
7.
Lee, In‐Hwan, A. Y. Polyakov, N. M. Shmidt, et al.. (2017). Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs. Applied Physics Letters. 111(6). 20 indexed citations
8.
Levinshteĭn, M. E., M. M. Kulagina, V. N. Petrov, et al.. (2015). Nanomaterial disordering in AlGaN/GaN UV LED structures. Journal of Physics Conference Series. 643. 12128–12128. 3 indexed citations
9.
Levinshteĭn, M. E., et al.. (2014). Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs. Journal of Crystal Growth. 401. 302–304. 8 indexed citations
10.
Вергелес, П. С., et al.. (2011). Effect of low energy electron irradiation on optical properties of InGaN/GaN light emitting structures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(4). 1265–1268. 10 indexed citations
11.
Shmidt, N. M., et al.. (2010). Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures. Solid State Communications. 151(3). 208–211. 17 indexed citations
12.
Хвостиков, В. П., et al.. (2007). GaSb Applications for Solar Thermophotovoltaic Conversion. AIP conference proceedings. 890. 139–148. 3 indexed citations
13.
Карташова, А. П., А. Г. Колмаков, W. V. Lundin, et al.. (2005). Surface control of light‐emitting structures based on III‐nitrides. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(2). 837–840. 7 indexed citations
14.
Usikov, A., O. V. Kovalenkov, V. Ivantsov, et al.. (2004). P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE. MRS Proceedings. 831. 3 indexed citations
15.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2003). Deep levels studies of AlGaN/GaN superlattices. Solid-State Electronics. 47(4). 671–676. 11 indexed citations
16.
Shmidt, N. M., et al.. (2002). Peculiarities of defect and impurity behaviour in gallium arsenide during surface gettering. Journal of Physics Condensed Matter. 14(48). 13105–13109. 4 indexed citations
17.
Krestnikov, I. L., W. V. Lundin, A. V. Sakharov, et al.. (2001). Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices. Physics-Uspekhi. 44(8). 815–816. 4 indexed citations
18.
Jmerik, V. N., S. V. Sorokin, T. V. Shubina, et al.. (2000). Electrically stable p-type doping of ZnSe grown by molecular beam epitaxy with different nitrogen activators. Journal of Crystal Growth. 214-215. 502–506. 7 indexed citations
19.
Shmidt, N. M., W. V. Lundin, A. V. Sakharov, et al.. (2000). Ultraviolet photodetectors based on GaN and Al x Ga 1-x N epitaxial layers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4340. 92–92. 3 indexed citations
20.
Alfërov, Zh. I., et al.. (1983). Highly efficient ultraviolet photodetector. Technical Physics Letters. 9. 1516–1519. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Kamran Forghani Breakdown of academic impact, for papers by L. Considine Breakdown of academic impact, for papers by Kartik Senapati Breakdown of academic impact, for papers by S. Ruffenach Breakdown of academic impact, for papers by Mark Beeler Breakdown of academic impact, for papers by J. S. Horwitz Breakdown of academic impact, for papers by L. E. C. van de Leemput Breakdown of academic impact, for papers by M. Razeghi Breakdown of academic impact, for papers by Q. K. Xue Breakdown of academic impact, for papers by R. Opitz
Rankless by CCL
2026