Veeraraghavan Basker

656 total citations
16 papers, 182 citations indexed

About

Veeraraghavan Basker is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, Veeraraghavan Basker has authored 16 papers receiving a total of 182 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 4 papers in Biomedical Engineering and 3 papers in Surfaces, Coatings and Films. Recurrent topics in Veeraraghavan Basker's work include Advancements in Semiconductor Devices and Circuit Design (12 papers), Semiconductor materials and devices (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). Veeraraghavan Basker is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (12 papers), Semiconductor materials and devices (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). Veeraraghavan Basker collaborates with scholars based in United States. Veeraraghavan Basker's co-authors include Huimei Zhou, Dechao Guo, P. Jamison, N. Loubet, Huiming Bu, Bala Haran, Vamsi Paruchuri, H. Bu, J. Li and Supratik Guha and has published in prestigious journals such as IEEE Electron Device Letters.

In The Last Decade

Veeraraghavan Basker

15 papers receiving 168 citations

Peers

Veeraraghavan Basker
K. Petrarca United States
B. To United States
Jan Hoentschel Germany
P. Saunders United States
V. Basker United States
J. Mazurier France
M. Marin France
S. Mehta United States
K. Okano Japan
Xiaogen Yin China
K. Petrarca United States
Veeraraghavan Basker
Citations per year, relative to Veeraraghavan Basker Veeraraghavan Basker (= 1×) peers K. Petrarca

Countries citing papers authored by Veeraraghavan Basker

Since Specialization
Citations

This map shows the geographic impact of Veeraraghavan Basker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Veeraraghavan Basker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Veeraraghavan Basker more than expected).

Fields of papers citing papers by Veeraraghavan Basker

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Veeraraghavan Basker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Veeraraghavan Basker. The network helps show where Veeraraghavan Basker may publish in the future.

Co-authorship network of co-authors of Veeraraghavan Basker

This figure shows the co-authorship network connecting the top 25 collaborators of Veeraraghavan Basker. A scholar is included among the top collaborators of Veeraraghavan Basker based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Veeraraghavan Basker. Veeraraghavan Basker is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
2.
Schmidt, Daniel, Andrew Greene, Julien Frougier, et al.. (2021). Nanosheet metrology opportunities for technology readiness. 55–55. 1 indexed citations
3.
Seshadri, Indira, Prateek Hundekar, Jingyun Zhang, et al.. (2021). Performance of stacked nanosheet gate all around FET’s with EUV patterned gate and sheets. 28–28. 3 indexed citations
4.
Mochizuki, Shinichi, Maruf Bhuiyan, Huimei Zhou, et al.. (2020). Stacked Gate-All-Around Nanosheet pFET with Highly Compressive Strained Si1-xGex Channel. 2.3.1–2.3.4. 30 indexed citations
5.
Shen, Tian, Kôji Watanabe, Huimei Zhou, et al.. (2020). A new technique for evaluating stacked nanosheet inner spacer TDDB reliability. 1–5. 7 indexed citations
6.
Kong, Dexin, Daniel Schmidt, Julien Frougier, et al.. (2020). Development of SiGe Indentation Process Control to Enable Stacked Nanosheet FET Technology. 1–5. 3 indexed citations
7.
Xie, Ruilong, Heng Wu, Julien Frougier, et al.. (2020). Parasitic Resistance Reduction for Aggressively Scaled Stacked Nanosheet Transistors. 31–33. 1 indexed citations
8.
9.
Bao, R., Kôji Watanabe, Jian Guo, et al.. (2019). Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power Applications. 11.2.1–11.2.4. 26 indexed citations
10.
Wang, Miaomiao, Jingyun Zhang, Huimei Zhou, et al.. (2019). Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor. 1–6. 22 indexed citations
11.
Kong, Dexin, Chi‐Chun Liu, Soon‐Cheon Seo, et al.. (2018). In-line characterization of non-selective SiGe nodule defects with scatterometry enabled by machine learning. 35–35. 5 indexed citations
12.
13.
Maitra, K., A. Khakifirooz, Veeraraghavan Basker, et al.. (2011). Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- $\kappa$/Metal-Gate nFinFETs for High-Performance Logic Applications. IEEE Electron Device Letters. 32(6). 713–715. 19 indexed citations
14.
Wang, Miaomiao, Kangguo Cheng, A. Khakifirooz, et al.. (2010). HOT-carrier degradation in undoped-body ETSOI FETS and SOI FINFETS. 9. 1099–1104. 4 indexed citations
15.
Maitra, K., Chung-Hsun Lin, A. Kerber, et al.. (2010). Extraction of Effective Oxide Thickness for SOI FINFETs With High- $\kappa$/Metal Gates Using the Body Effect. IEEE Electron Device Letters. 31(7). 650–652. 4 indexed citations
16.
Cartier, E., F. R. McFeely, Vijay Narayanan, et al.. (2005). Role of oxygen vacancies in V/sub BF//V/sub t/ stability of pFET metals on HfO/sub 2/. 230–231. 52 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Breakdown of academic impact, for papers by K. Petrarca Breakdown of academic impact, for papers by B. To Breakdown of academic impact, for papers by Jan Hoentschel Breakdown of academic impact, for papers by P. Saunders Breakdown of academic impact, for papers by V. Basker Breakdown of academic impact, for papers by J. Mazurier Breakdown of academic impact, for papers by M. Marin Breakdown of academic impact, for papers by S. Mehta Breakdown of academic impact, for papers by K. Okano Breakdown of academic impact, for papers by Xiaogen Yin
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2026