Bala Haran

4.4k total citations · 2 hit papers
44 papers, 3.0k citations indexed

About

Bala Haran is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Bala Haran has authored 44 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 11 papers in Electronic, Optical and Magnetic Materials and 11 papers in Materials Chemistry. Recurrent topics in Bala Haran's work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Advancements in Battery Materials (10 papers). Bala Haran is often cited by papers focused on Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Advancements in Battery Materials (10 papers). Bala Haran collaborates with scholars based in United States and Germany. Bala Haran's co-authors include Branko N. Popov, Ralph E. White, Premanand Ramadass, Gang Ning, Parthasarathy Gomadam, Basker Veeraraghavan, R.A. Guidotti, Prabhu Ganesan, Ramaraja P. Ramasamy and Lj. Arsov and has published in prestigious journals such as Journal of The Electrochemical Society, Journal of Power Sources and Corrosion Science.

In The Last Decade

Bala Haran

40 papers receiving 2.8k citations

Hit Papers

Development of First Principles Capacity Fade Model for L... 2003 2026 2010 2018 2004 2003 200 400 600
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Development of First Principles Capacity Fade Model for Li-Ion Cells
    2004 657 citations Premanand Ramadass, Bala Haran et al. profile →
  2. Capacity fade study of lithium-ion batteries cycled at high discharge rates
    2003 530 citations Gang Ning, Bala Haran et al. Journal of Power Sources profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Bala Haran United States 21 2.6k 2.1k 280 275 184 44 3.0k
Rohit Bhagat United Kingdom 28 2.2k 0.8× 1.8k 0.8× 315 1.1× 347 1.3× 551 3.0× 74 2.9k
Monica Marinescu United Kingdom 29 4.5k 1.7× 3.6k 1.7× 356 1.3× 333 1.2× 375 2.0× 65 5.0k
I. Villarreal Spain 21 2.2k 0.8× 2.1k 1.0× 591 2.1× 155 0.6× 123 0.7× 39 2.9k
Simon E. J. O’Kane United Kingdom 12 2.6k 1.0× 2.0k 0.9× 332 1.2× 140 0.5× 166 0.9× 18 2.8k
Jan Philipp Schmidt Germany 25 2.5k 0.9× 1.8k 0.9× 264 0.9× 205 0.7× 462 2.5× 47 2.9k
Xuejuan Zhao China 13 2.4k 0.9× 2.2k 1.1× 118 0.4× 152 0.6× 146 0.8× 20 2.9k
Jingyi Chen China 11 1.9k 0.7× 1.7k 0.8× 143 0.5× 123 0.4× 170 0.9× 25 2.2k
Yuqiong Kang China 16 2.3k 0.9× 1.3k 0.6× 210 0.8× 367 1.3× 597 3.2× 29 2.6k
Laisuo Su United States 24 1.7k 0.7× 1.1k 0.5× 261 0.9× 161 0.6× 217 1.2× 59 2.0k

Countries citing papers authored by Bala Haran

Since Specialization
Citations

This map shows the geographic impact of Bala Haran's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bala Haran with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bala Haran more than expected).

Fields of papers citing papers by Bala Haran

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bala Haran. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bala Haran. The network helps show where Bala Haran may publish in the future.

Co-authorship network of co-authors of Bala Haran

This figure shows the co-authorship network connecting the top 25 collaborators of Bala Haran. A scholar is included among the top collaborators of Bala Haran based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bala Haran. Bala Haran is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Chen, Zhijun, et al.. (2023). Materials Enabled Memory Scaling and New Architectures. 1–4. 2 indexed citations
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Peethala, B., Devika Sil, Nicholas A. Lanzillo, et al.. (2021). Metal Wet Recess Challenges and Solutions for beyond 7nm Fully Aligned Via Integration. 1–3. 1 indexed citations
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Nguyen, S., H. Shobha, Huai Huang, et al.. (2021). Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects. b35. 1–2. 3 indexed citations
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Mochizuki, Shinichi, Maruf Bhuiyan, Huimei Zhou, et al.. (2020). Stacked Gate-All-Around Nanosheet pFET with Highly Compressive Strained Si1-xGex Channel. 2.3.1–2.3.4. 30 indexed citations
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Xie, Ruilong, Heng Wu, Julien Frougier, et al.. (2020). Parasitic Resistance Reduction for Aggressively Scaled Stacked Nanosheet Transistors. 31–33. 1 indexed citations
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Bao, R., Kôji Watanabe, Jian Guo, et al.. (2019). Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power Applications. 11.2.1–11.2.4. 26 indexed citations
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Mochizuki, Shinichi, Richard G. Southwick, J. Li, et al.. (2017). A comparative study of strain and Ge content in Si<inf>1−x</inf>Ge<inf>x</inf> channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs. 37.2.1–37.2.4. 20 indexed citations
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Lee, Choonghyun, Richard G. Southwick, P. Jamison, et al.. (2017). Interface engineering of Si<inf>1−x</inf>Ge<inf>x</inf> gate stacks for high performance dual channel CMOS. 36. 573–576. 1 indexed citations
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Gluschenkov, Oleg, Jody Fronheiser, Juntao Li, et al.. (2016). Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology. IEEE Electron Device Letters. 37(11). 1371–1374. 47 indexed citations
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Sleight, J.W., Isaac Lauer, O. Dokumaci, et al.. (2006). Challenges and Opportunities for High Performance 32 nm CMOS Technology. 1–4. 36 indexed citations
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Veeraraghavan, Basker, et al.. (2003). Development of a Novel Electrochemical Method to Deposit High Corrosion Resistant Silicate Layers on Metal Substrates. Electrochemical and Solid-State Letters. 6(2). B4–B4. 13 indexed citations
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Ning, Gang, Bala Haran, & Branko N. Popov. (2003). Capacity fade study of lithium-ion batteries cycled at high discharge rates. Journal of Power Sources. 117(1-2). 160–169. 530 indexed citations breakdown →
19.
Ganesan, Prabhu, et al.. (2002). Study of cobalt-doped lithium–nickel oxides as cathodes for MCFC. Journal of Power Sources. 111(1). 109–120. 28 indexed citations
20.
Ramadass, Premanand, Bala Haran, Ralph E. White, & Branko N. Popov. (2002). Capacity fade of Sony 18650 cells cycled at elevated temperatures. Journal of Power Sources. 112(2). 614–620. 243 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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