Xiaogen Yin

415 total citations
17 papers, 160 citations indexed

About

Xiaogen Yin is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Xiaogen Yin has authored 17 papers receiving a total of 160 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 6 papers in Biomedical Engineering and 5 papers in Materials Chemistry. Recurrent topics in Xiaogen Yin's work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Ferroelectric and Negative Capacitance Devices (7 papers). Xiaogen Yin is often cited by papers focused on Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Ferroelectric and Negative Capacitance Devices (7 papers). Xiaogen Yin collaborates with scholars based in China, Sweden and Singapore. Xiaogen Yin's co-authors include Huilong Zhu, Yongkui Zhang, Weixing Huang, Kunpeng Jia, Chen Li, Yangyang Li, Junjie Li, Zhenhua Wu, Junfeng Li and Guilei Wang and has published in prestigious journals such as Nano Letters, ACS Applied Materials & Interfaces and IEEE Electron Device Letters.

In The Last Decade

Xiaogen Yin

17 papers receiving 154 citations

Peers

Xiaogen Yin

EEE

AMPO

T. Salvetat France

Christian Renaux Belgium

Rajeewa Kumar Jaisawal India

Marie-Pierre Samson France

S. Morarka United States

Ilho Myeong South Korea

Evi Vrancken Belgium

B. To United States

Nathalie Deltimple France

Xinlv Duan China

T. Salvetat France

Xiaogen Yin

121 ×0.8

EEE

31 ×0.7

15 ×0.4

23 ×1.5

AMPO

3 ×0.8

Citations per year, relative to Xiaogen Yin Xiaogen Yin (= 1×) peers T. Salvetat

Countries citing papers authored by Xiaogen Yin

Since Specialization

Citations

This map shows the geographic impact of Xiaogen Yin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Xiaogen Yin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Xiaogen Yin more than expected).

Fields of papers citing papers by Xiaogen Yin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Xiaogen Yin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Xiaogen Yin. The network helps show where Xiaogen Yin may publish in the future.

Co-authorship network of co-authors of Xiaogen Yin

This figure shows the co-authorship network connecting the top 25 collaborators of Xiaogen Yin. A scholar is included among the top collaborators of Xiaogen Yin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Xiaogen Yin. Xiaogen Yin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

17 of 17 papers shown

Li, Chen, Huilong Zhu, Yongkui Zhang, et al.. (2021). First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates. Nano Letters. 21(11). 4730–4737. 22 indexed citations

Huang, Weixing, Huilong Zhu, Yongkui Zhang, et al.. (2021). Ferroelectric Vertical Gate-All-Around Field-Effect-Transistors With High Speed, High Density, and Large Memory Window. IEEE Electron Device Letters. 43(1). 25–28. 16 indexed citations

Huang, Weixing, Huilong Zhu, Yongkui Zhang, et al.. (2021). Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits. Microelectronics Journal. 114. 105110–105110. 10 indexed citations

Huang, Weixing, Huilong Zhu, Kunpeng Jia, et al.. (2020). Investigation of device-circuit for negative capacitance vertical nanowire FETs based on SPICE model. Semiconductor Science and Technology. 35(8). 85018–85018. 8 indexed citations

Huang, Weixing, Huilong Zhu, Zhenhua Wu, et al.. (2020). Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors. IEEE Journal of the Electron Devices Society. 8. 879–884. 22 indexed citations

Li, Chen, Huilong Zhu, Yongkui Zhang, et al.. (2020). Selective Digital Etching of Silicon–Germanium Using Nitric and Hydrofluoric Acids. ACS Applied Materials & Interfaces. 12(42). 48170–48178. 11 indexed citations

Yin, Xiaogen, Huilong Zhu, Guilei Wang, et al.. (2020). Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si _1−x Ge _x. ECS Journal of Solid State Science and Technology. 9(3). 34012–34012. 12 indexed citations

Huang, Weixing, Huilong Zhu, Yongkui Zhang, et al.. (2020). Investigation of ferroelectric field-effect transistors using a replacement metal gate process. Semiconductor Science and Technology. 36(3). 35003–35003. 2 indexed citations

Li, Chen, Hongxiao Lin, Junjie Li, et al.. (2020). Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application. Nanoscale Research Letters. 15(1). 225–225. 4 indexed citations

10.

Wang, Guilei, Xiaogen Yin, Zhigang Ji, et al.. (2020). Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal. Microelectronics Reliability. 107. 113627–113627. 5 indexed citations

11.

Zhu, Huilong, Yongkui Zhang, Guilei Wang, et al.. (2020). Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium. Nanomaterials. 10(9). 1715–1715. 3 indexed citations

12.

Huang, Weixing, Huilong Zhu, Kunpeng Jia, et al.. (2019). Simulations of VNW-FETs with Adjustable Spacer-Like Negative Capacitors Based on Experimental Data. ECS Journal of Solid State Science and Technology. 8(2). Q38–Q42. 7 indexed citations

13.

Yang, Hong, Yongliang Li, Huilong Zhu, Xiaogen Yin, & Anyan Du. (2019). Advanced TEM Application in 10nm below Technology Node Device Analysis. 1–4. 1 indexed citations

14.

Wang, Guilei, Mohammadreza Kolahdouz, Jun Luo, et al.. (2019). Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS). Journal of Materials Science Materials in Electronics. 31(1). 26–33. 8 indexed citations

15.

Li, Junjie, Yongliang Li, N. Zhou, et al.. (2019). Study of selective isotropic etching Si1−xGex in process of nanowire transistors. Journal of Materials Science Materials in Electronics. 31(1). 134–143. 19 indexed citations

16.

Zhu, Huilong, et al.. (2017). Influence of Dopants Profile on Random Dopant Fluctuation and Optimization for Bulk FinFET. ECS Journal of Solid State Science and Technology. 6(7). M79–M82. 1 indexed citations

17.

Zhu, Huilong, Sumei Wang, Yongbo Liu, et al.. (2017). Negative-Capacitance Characteristics in a Steady-State Ferroelectric Capacitor Made of Parallel Domains. IEEE Electron Device Letters. 38(8). 1176–1179. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact