N. Planes

1.9k total citations
56 papers, 804 citations indexed

About

N. Planes is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Biomedical Engineering. According to data from OpenAlex, N. Planes has authored 56 papers receiving a total of 804 indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 5 papers in Hardware and Architecture and 4 papers in Biomedical Engineering. Recurrent topics in N. Planes's work include Advancements in Semiconductor Devices and Circuit Design (44 papers), Semiconductor materials and devices (44 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). N. Planes is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (44 papers), Semiconductor materials and devices (44 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). N. Planes collaborates with scholars based in France, Belgium and Switzerland. N. Planes's co-authors include M. Haond, Denis Flandre, Valeriya Kilchytska, Babak Kazemi Esfeh, Jean‐Pierre Raskin, F. Arnaud, V. Barral, H. Brut, S. Haendler and J. Camassel and has published in prestigious journals such as Physical review. B, Condensed matter, IEEE Transactions on Electron Devices and Electronics Letters.

In The Last Decade

N. Planes

53 papers receiving 775 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Planes France 17 781 56 51 49 39 56 804
S. Mudanai United States 16 809 1.0× 78 1.4× 77 1.5× 92 1.9× 51 1.3× 37 835
L. Tosti France 15 773 1.0× 87 1.6× 95 1.9× 60 1.2× 62 1.6× 32 805
S. Ramey United States 15 684 0.9× 60 1.1× 44 0.9× 115 2.3× 45 1.2× 50 732
N. Lindert United States 12 790 1.0× 111 2.0× 46 0.9× 45 0.9× 45 1.2× 16 823
Jeffrey B. Johnson United States 12 415 0.5× 41 0.7× 32 0.6× 41 0.8× 21 0.5× 49 431
Jeff A. Babcock United States 8 867 1.1× 35 0.6× 66 1.3× 68 1.4× 96 2.5× 19 904
P. Oldiges United States 16 637 0.8× 76 1.4× 50 1.0× 41 0.8× 51 1.3× 35 644
L. Ciampolini France 9 321 0.4× 56 1.0× 24 0.5× 115 2.3× 55 1.4× 35 361
Subhadeep Mukhopadhyay India 17 844 1.1× 98 1.8× 46 0.9× 63 1.3× 43 1.1× 38 919
Olivier Faynot France 15 821 1.1× 122 2.2× 24 0.5× 27 0.6× 44 1.1× 80 841

Countries citing papers authored by N. Planes

Since Specialization
Citations

This map shows the geographic impact of N. Planes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Planes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Planes more than expected).

Fields of papers citing papers by N. Planes

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Planes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Planes. The network helps show where N. Planes may publish in the future.

Co-authorship network of co-authors of N. Planes

This figure shows the co-authorship network connecting the top 25 collaborators of N. Planes. A scholar is included among the top collaborators of N. Planes based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Planes. N. Planes is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Esfeh, Babak Kazemi, N. Planes, M. Haond, et al.. (2020). Self-Heating in FDSOI UTBB MOSFETs at Cryogenic Temperatures and its Effect on Analog Figures of Merit. IEEE Journal of the Electron Devices Society. 8. 789–796. 13 indexed citations
2.
Esfeh, Babak Kazemi, et al.. (2020). 28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K. IEEE Journal of the Electron Devices Society. 8. 646–654. 27 indexed citations
3.
Esfeh, Babak Kazemi, Valeriya Kilchytska, N. Planes, et al.. (2019). 28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K. IEEE Journal of the Electron Devices Society. 7. 810–816. 13 indexed citations
4.
Esfeh, Babak Kazemi, et al.. (2019). 28 FDSOI RF Figures of Merit down to 4.2 K. 1–3. 4 indexed citations
5.
Esfeh, Babak Kazemi, et al.. (2019). Low-Frequency Noise Transistor Performance for UTBB FDSOI MOSFET-C Filters. 33. 1–2. 3 indexed citations
6.
Esfeh, Babak Kazemi, N. Planes, M. Haond, et al.. (2019). Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures. 162–165. 5 indexed citations
7.
Esfeh, Babak Kazemi, Valeriya Kilchytska, Bertrand Parvais, et al.. (2017). Back-gate bias effect on 3-port UTBB-FDSOI non-linearity performance. European Solid-State Device Research Conference. 3 indexed citations
8.
Esfeh, Babak Kazemi, Valeriya Kilchytska, Bertrand Parvais, et al.. (2017). Back-gate bias effect on FDSOI MOSFET RF Figures of Merits and parasitic elements. Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)). 228–230. 15 indexed citations
9.
Karatsori, T.A., Christoforos Theodorou, Xavier Mescot, et al.. (2016). Study of Hot-Carrier-Induced Traps in Nanoscale UTBB FD-SOI MOSFETs by Low-Frequency Noise Measurements. IEEE Transactions on Electron Devices. 1–7. 8 indexed citations
10.
11.
Esfeh, Babak Kazemi, Valeriya Kilchytska, N. Planes, et al.. (2015). Comparative study of parasitic elements on RF FoM in 28 nm FD SOI and bulk technologies. Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)). 1–3. 6 indexed citations
12.
Makovejev, S., Babak Kazemi Esfeh, V. Barral, et al.. (2015). Wide frequency band assessment of 28nm FDSOI technology platform for analogue and RF applications. Solid-State Electronics. 108. 47–52. 28 indexed citations
13.
Makovejev, S., Babak Kazemi Esfeh, J.‐P. Raskin, et al.. (2014). Variability of UTBB MOSFET analog figures of merit in wide frequency range. Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)). 222–225. 3 indexed citations
14.
Golanski, Dominique, P. Fonteneau, C. Fenouillet-Béranger, et al.. (2013). First demonstration of a full 28nm high-k/metal gate circuit transfer from Bulk to UTBB FDSOI technology through hybrid integration. 22 indexed citations
15.
Thomas, Olivier, Brian Zimmer, N. Planes, et al.. (2012). 6T SRAM design for wide voltage range in 28nm FDSOI. 1–2. 15 indexed citations
16.
Huard, Vincent, et al.. (2010). Managing SRAM reliability from bitcell to library level. 1. 655–664. 28 indexed citations
17.
Raynaud, C., S. Haendler, G. Guégan, et al.. (2009). 65nm Low Power (LP) SOI Technology on High Resistivity (HR) Substrate for WLAN and Mmwave SOCs. ECS Transactions. 19(4). 257–264. 3 indexed citations
18.
Planes, N., V. Huard, C. Laviron, et al.. (2008). Process Architecture for Spatial and Temporal Variability Improvement of SRAM Circuits at the 45nm Node. 3 indexed citations
19.
Planes, N., et al.. (2003). Impact of gate current on first order parameter extraction in sub-0.1 μm CMOS technologies. 133. 3–141. 1 indexed citations
20.
Planes, N., Sylvie Contreras, Thierry Chassagne, et al.. (2000). Characterization of 3C-SiC/SOI Deposited with HMDS. Materials science forum. 338-342. 599–602. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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