D. Goguenheim

813 total citations
68 papers, 638 citations indexed

About

D. Goguenheim is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Goguenheim has authored 68 papers receiving a total of 638 indexed citations (citations by other indexed papers that have themselves been cited), including 66 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Goguenheim's work include Semiconductor materials and devices (58 papers), Advancements in Semiconductor Devices and Circuit Design (47 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). D. Goguenheim is often cited by papers focused on Semiconductor materials and devices (58 papers), Advancements in Semiconductor Devices and Circuit Design (47 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). D. Goguenheim collaborates with scholars based in France, Switzerland and India. D. Goguenheim's co-authors include D. Vuillaume, A. Bravaix, M. Lannoo, Emmanuel Vincent, N. Revil, Philippe Fontaine, D. Deresmes, F. Rondelez, V. Huard and Lionel Patrone and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

D. Goguenheim

68 papers receiving 619 citations

Peers

Countries citing papers authored by D. Goguenheim

Since Specialization

Citations

This map shows the geographic impact of D. Goguenheim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Goguenheim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Goguenheim more than expected).

Fields of papers citing papers by D. Goguenheim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Goguenheim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Goguenheim. The network helps show where D. Goguenheim may publish in the future.

Co-authorship network of co-authors of D. Goguenheim

This figure shows the co-authorship network connecting the top 25 collaborators of D. Goguenheim. A scholar is included among the top collaborators of D. Goguenheim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Goguenheim. D. Goguenheim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Distance measurement using narrowband ZigBee devices 2014 ·(unknown), (unknown), (unknown), D. Goguenheim	3
2	Study of gate contact over active area 2014 ·(unknown), (unknown), (unknown), F. H. Julien, J.-L. Ogier, D. Goguenheim, (unknown)	3
3	Portable microstimulator for chronic deep brain stimulation in freely moving rats 2012 ·Journal of Neuroscience Methods ·Claude Forni, (unknown), Christophe Melon, D. Goguenheim, Lydia Kerkerian‐Le Goff, Pascal Salin	33
4	Functionalization of Silicon Dioxide Surface with 3-Aminopropyltrimethoxysilane for Fullerene C<SUB>60</SUB> Immobilization 2011 ·Journal of Nanoscience and Nanotechnology ·(unknown), Lionel Patrone, D. Goguenheim	2
5	Different types of phase separation in binary monolayers of long chain alkyltrichlorosilanes on silicon oxide 2011 ·RSC Advances ·Simon Desbief, Lionel Patrone, D. Goguenheim, D. Vuillaume	2
6	Hot-carrier to cold-carrier device lifetime modeling with temperature for low power 40nm Si-bulk NMOS and PMOS FETs 2011 ·A. Bravaix, V. Huard, D. Goguenheim, Emmanuel Vincent	30
7	Impact of chain length, temperature, and humidity on the growth of long alkyltrichlorosilane self-assembled monolayers 2010 ·Physical Chemistry Chemical Physics ·Simon Desbief, Lionel Patrone, D. Goguenheim, David Guérin, D. Vuillaume	39
8	Geometry effects on the NBTI degradation of PMOS transistors 2008 ·(unknown), (unknown), (unknown), D. Goguenheim	3
9	Microstructure and resistance switching in NiO binary oxide films obtained from Ni oxidation 2006 ·(unknown), Ch. Turquat, Christophe Müller, J. G. Lisoni, L. Goux, Dirk J. Wouters, D. Goguenheim	1
10	Deep hole trapping effects in the degradation mechanisms of 6.5–2 nm thick gate-oxide PMOSFETs 2004 ·Microelectronic Engineering ·A. Bravaix, D. Goguenheim, N. Revil, Emmanuel Vincent	3
11	Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides 2004 ·Microelectronics Reliability ·(unknown), D. Goguenheim, A. Bravaix	1
12	Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5–2 nm thick gate-oxides 2003 ·Microelectronics Reliability ·A. Bravaix, D. Goguenheim, N. Revil, Emmanuel Vincent	10
13	Hot-carrier damage in AC-stressed deep submicrometer CMOS technologies 2003 ·A. Bravaix, D. Goguenheim, N. Revil, Emmanuel Vincent	6
14	Comparison of low leakage and high speed deep submicron PMOSFETs submitted to hole injections 2003 ·A. Bravaix, D. Goguenheim, N. Revil, Emmanuel Vincent	6
15	Comparison of oxide leakage currents induced by ion implantation and high field electric stress 2000 ·Microelectronics Reliability ·D. Goguenheim, A. Bravaix, (unknown), Patrick Lambert, (unknown)	3
16	Turn-around effects during dynamic operation in 0.25μm CMOS technology from low to high temperature 1999 ·Microelectronic Engineering ·A. Bravaix, D. Goguenheim, N. Revil, Emmanuel Vincent	3
17	Projecting Device Lifetime for Scaling Technology Generations with the Quasi-Static model 1998 ·European Solid-State Device Research Conference ·A. Bravaix, D. Goguenheim, N. Revil, (unknown), P. Mortini	1
18	Effects of high temperature on performances and hot-carrier reliability in DC/AC stressed 0.35 um n-MOSFETs 1997 ·European Solid-State Device Research Conference ·A. Bravaix, D. Goguenheim, N. Revil, (unknown), P. Mortini	1
19	Defects Induced by High Electric Field Stress and the Trivalent Silicon Defects at the Si-Si0<sub>2</sub> Interface 1992 ·Materials science forum ·D. Vuillaume, (unknown), D. Goguenheim	1
20	Theoretical and experimental aspects of the thermal dependence of electron capture coefficients 1990 ·Journal of Applied Physics ·D. Goguenheim, M. Lannoo	48

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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