S. Bruyère

1.3k citations

56 papers · 1.0k indexed · 1 hit paper · h-index 14

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability

Papers in

Electrical and Electronic Engineering 55
- Semiconductor materials and devices 55
- Advancements in Semiconductor Devices and Circuit Design 34
- Integrated Circuits and Semiconductor Failure Analysis 17
- Ferroelectric and Negative Capacitance Devices 17
- Advanced Memory and Neural Computing 8
- Silicon Carbide Semiconductor Technologies 3
Electronic, Optical and Magnetic Materials 11
- Copper Interconnects and Reliability 11

Co-authors: G. Ghibaudo Emmanuel Vincent F. Monsieur G. Ribes M. Denais C. Parthasarathy Jérôme Mitard D. Roy
Journals: Microelectronics Reliability (13 papers)Microelectronic Engineering (5 papers)IEEE Transactions on Device and Materials Reliability (3 papers)Applied Physics Letters (1 paper)IEEE Transactions on Semiconductor Manufacturing (1 paper)
Partner nations: France Switzerland Netherlands

In The Last Decade

S. Bruyère

54 papers receiving 975 citations

Hit Papers

align trajectories log scale

Review on high-k dielectrics reliability issues 2005 · 416 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2005 IEEE Transactions on Device and Materials Reliability

Peers

Countries citing papers authored by S. Bruyère

Since Specialization

Citations

This map shows the geographic impact of S. Bruyère's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Bruyère with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Bruyère more than expected).

Fields of papers citing papers by S. Bruyère

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Bruyère. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Bruyère. The network helps show where S. Bruyère may publish in the future.

Co-authors

The 25 scholars most cited alongside S. Bruyère, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Bruyère Line = papers co-authored together S. Bruyère links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Contact etch stop a-SixNy:H layer: A key factor for single polysilicon flash memory data retention Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·G. Beylier, D. Benoit, P. Mora, S. Bruyère, G. Ghibaudo	2009	4
2	Impact of silicon nitride CESL on NLDEMOS transistor reliability Microelectronics Reliability ·G. Beylier, S. Bruyère, D. Benoit, G. Ghibaudo	2008	2
3	Extended Reliability Study of High Density PZT Capacitors: Intrinsic Lifetime Determination and Wafer Level Screening Strategy E. Bouyssou, Guillaume Guégan, S. Bruyère, R. Pezzani, L. Berneux, L. Dantas de Morais, J.-P. Rebrassé, Christine Anceau, Christian Nopper	2007	5
4	Borderless silicon nitride defect behaviour and their influences on initial data loss in single polysilicon flash memories Microelectronic Engineering ·G. Beylier, S. Bruyère, G. Ghibaudo	2007	3
5	Impact of TiN post-treatment on metal insulator metal capacitor performances Microelectronic Engineering ·A. Bajolet, J-P. Manceau, S. Bruyère, R. Clerc, M. Proust, Nicolas Gaillard, J-C. Giraudin, P. Delpech, L. Montès, G. Ghibaudo	2006	11
6	Integration of a high density Ta2O5 MIM capacitor following 3D damascene architecture compatible with copper interconnects Microelectronic Engineering ·M. Thomas, A. Farcy, Nicolas Gaillard, C. Perrot, M. Gros‐Jean, I. Maťko, M. Cordeau, W. Saikaly, M. Proust, P. Caubet, E. Deloffre, S. Crémer, S. Bruyère, B. Chenevier, J. Torrès	2006	11
7	Dielectric relaxation characterization and modeling in large frequency and temperature domain: application to 5fF//spl mu/m/sup 2/ Ta/sub 2/O/sub 5/ MIM capacitor J.‐P. Manceau, S. Bruyère, Eric Picollet, M. Minondo, C. Grundrich, D. Cottin, M. Bely	2006	6
8	MVHR (multi-vibrational hydrogen release): consistency with bias temperature instability and dielectrics breakdown G. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo	2005	7
9	Breakdown mechanisms in ultra-thin oxides: impact of carrier energy and current through substrate hot carrier stress study Microelectronic Engineering ·G. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo	2004	4
10	Ultra thin gate oxide characterization The European Physical Journal Applied Physics ·D. Roy, S. Bruyère, D. Rideau, Fabien Gilibert, L. Giguerre, F. Monsieur, G. Gouget, P. Scheer	2004	0
11	New insights into the change of voltage acceleration and temperature activation of oxide breakdown Microelectronics Reliability ·G. Ribes, S. Bruyère, F. Monsieur, D. Roy, V. Huard	2003	8
12	Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides F. Monsieur, Emmanuel Vincent, G. Ribes, V. Huard, S. Bruyère, D. Roy, G. Pananakakis, G. Ghibaudo	2003	1
13	Accurate and efficient design of experiment for reliability assessment. Application to a 20 Å gate oxide F. Monsieur, Emmanuel Vincent, D. Roy, S. Bruyère, F. Pasqualini, G. Pananakakis, G. Ghibaudo	2003	2
14	MIM capacitance variation under electrical stress Microelectronics Reliability ·C. Besset, S. Bruyère, S. Blonkowski, S. Crémer, Emmanuel Vincent	2003	42
15	Quasi-breakdown in ultra-thin SiO/sub 2/ films: occurrence characterization and reliability assessment methodology S. Bruyère, E. Vincent, G. Ghibaudo	2002	24
16	Electric field and temperature acceleration of quasi-breakdown phenomena in ultrathin oxides D. Roy, S. Bruyère, E. Vincent, G. Ghibaudo	2002	5
17	Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions Microelectronics Reliability ·F. Monsieur, Emmanuel Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo	2001	10
18	Wet or dry ultrathin oxides: impact on gate oxide and device reliability Microelectronics Reliability ·S. Bruyère, F. Guyader, W. De Coster, Emmanuel Vincent, M Saadeddine, N. Revil, G. Ghibaudo	2000	7
19	Model for the oxide thickness dependence of SILC generation based on anode hole injection process Microelectronics Reliability ·C. Jahan, S. Bruyère, G. Ghibaudo, Emmanuel Vincent, K. Barla	1999	7
20	Dielectric reliability in deep-submicron technologies: From thin to ultrathin oxides Microelectronics Reliability ·Emmanuel Vincent, S. Bruyère, C. Papadas, P. Mortini	1997	31

About S. Bruyère

S. Bruyère is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, Bioengineering and Electrochemistry, having authored 56 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers), Ferroelectric and Negative Capacitance Devices (17 papers), Copper Interconnects and Reliability (11 papers), Advanced Memory and Neural Computing (8 papers), Electronic and Structural Properties of Oxides (5 papers) and Silicon Carbide Semiconductor Technologies (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.0k citations), Electronic, Optical and Magnetic Materials (99 citations), Materials Chemistry (190 citations), Atomic and Molecular Physics, and Optics (52 citations) and Condensed Matter Physics (19 citations). S. Bruyère has collaborated with scholars based in France, Switzerland and Netherlands. Frequent co-authors include G. Ghibaudo, Emmanuel Vincent, F. Monsieur, G. Ribes, M. Denais, C. Parthasarathy, Jérôme Mitard, D. Roy, V. Huard and G. Pananakakis. Their work appears in journals such as Microelectronics Reliability, Microelectronic Engineering, IEEE Transactions on Device and Materials Reliability, Applied Physics Letters and IEEE Transactions on Semiconductor Manufacturing.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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