D. Roy

1.2k total citations
83 papers, 678 citations indexed

About

D. Roy is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, D. Roy has authored 83 papers receiving a total of 678 indexed citations (citations by other indexed papers that have themselves been cited), including 80 papers in Electrical and Electronic Engineering, 16 papers in Electronic, Optical and Magnetic Materials and 6 papers in Materials Chemistry. Recurrent topics in D. Roy's work include Semiconductor materials and devices (80 papers), Advancements in Semiconductor Devices and Circuit Design (56 papers) and Integrated Circuits and Semiconductor Failure Analysis (45 papers). D. Roy is often cited by papers focused on Semiconductor materials and devices (80 papers), Advancements in Semiconductor Devices and Circuit Design (56 papers) and Integrated Circuits and Semiconductor Failure Analysis (45 papers). D. Roy collaborates with scholars based in France, Switzerland and India. D. Roy's co-authors include X. Federspiel, G. Ghibaudo, M. Rafik, S. Bruyère, F. Monsieur, Emmanuel Vincent, V. Huard, G. Ribes, A. Bravaix and G. Pananakakis and has published in prestigious journals such as SAE technical papers on CD-ROM/SAE technical paper series, Solid-State Electronics and Microelectronics Reliability.

In The Last Decade

D. Roy

80 papers receiving 654 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Roy France 14 660 94 58 41 13 83 678
H. Shibata Japan 11 340 0.5× 158 1.7× 33 0.6× 44 1.1× 46 3.5× 47 362
X. Federspiel France 15 758 1.1× 178 1.9× 29 0.5× 58 1.4× 13 1.0× 109 787
F. Cacho France 14 595 0.9× 47 0.5× 24 0.4× 29 0.7× 29 2.2× 92 623
Lei Shu China 11 223 0.3× 50 0.5× 87 1.5× 20 0.5× 17 1.3× 49 304
R. Khamankar United States 11 590 0.9× 87 0.9× 117 2.0× 38 0.9× 37 2.8× 34 629
Greg Dunne United States 12 793 1.2× 133 1.4× 69 1.2× 87 2.1× 29 2.2× 33 840
V. Khemka United States 15 676 1.0× 47 0.5× 40 0.7× 141 3.4× 14 1.1× 54 691
G. Ribes France 14 924 1.4× 55 0.6× 121 2.1× 54 1.3× 29 2.2× 49 940
Geraldine Jamieson Belgium 11 319 0.5× 125 1.3× 51 0.9× 81 2.0× 49 3.8× 26 345
S. Bruyère France 14 1.0k 1.5× 99 1.1× 190 3.3× 52 1.3× 43 3.3× 56 1.0k

Countries citing papers authored by D. Roy

Since Specialization
Citations

This map shows the geographic impact of D. Roy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Roy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Roy more than expected).

Fields of papers citing papers by D. Roy

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Roy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Roy. The network helps show where D. Roy may publish in the future.

Co-authorship network of co-authors of D. Roy

This figure shows the co-authorship network connecting the top 25 collaborators of D. Roy. A scholar is included among the top collaborators of D. Roy based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Roy. D. Roy is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Federspiel, X., et al.. (2023). Characterization and modeling of DCR and DCR drift variability in SPADs. 1–5. 5 indexed citations
2.
Federspiel, X., et al.. (2018). New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. Microelectronics Reliability. 87. 106–112. 1 indexed citations
3.
Federspiel, X., D. Rideau, F. Monsieur, et al.. (2016). Hot carrier stress: Aging modeling and analysis of defect location. HAL (Le Centre pour la Communication Scientifique Directe). 5A–4. 4 indexed citations
4.
Federspiel, X., et al.. (2013). Identification of the (√E+1/E)-dependence of porous low-k time dependent dielectric breakdown using over one year long package level tests. Microelectronic Engineering. 109. 90–93. 22 indexed citations
5.
6.
Federspiel, X., F. Cacho, & D. Roy. (2011). Experimental characterization of the interactions between HCI, off-state and BTI degradation modes. lo5. 133–136. 8 indexed citations
7.
Delcroix, P., S. Blonkowski, M. Kogelschatz, et al.. (2011). SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum. Microelectronic Engineering. 88(7). 1376–1379. 8 indexed citations
8.
Cacho, F., et al.. (2010). Insights about reliability of Heterojunction Bipolar Transistor under DC stress. 139–141. 1 indexed citations
9.
10.
Arnaud, L., E. Richard, D. Roy, et al.. (2009). Reliability failure modes in interconnects for the 45 nm technology node and beyond. 104. 179–181. 5 indexed citations
11.
12.
Ribes, G., M. Rafik, & D. Roy. (2007). Reliability issues for nano-scale CMOS dielectrics. Microelectronic Engineering. 84(9-10). 1910–1916. 16 indexed citations
13.
Denais, M., V. Huard, G. Ribes, et al.. (2005). New perspectives on NBTI in advanced technologies: modelling & characterization. 399–402. 15 indexed citations
14.
Ribes, G., S. Bruyère, M. Denais, D. Roy, & G. Ghibaudo. (2005). MVHR (multi-vibrational hydrogen release): consistency with bias temperature instability and dielectrics breakdown. 377–380. 7 indexed citations
15.
Ribes, G., S. Bruyère, M. Denais, D. Roy, & G. Ghibaudo. (2005). Modelling charge to breakdown using hydrogen multivibrational excitation (thin SiO2 and high-K dielectrics). 1–3. 9 indexed citations
16.
Roy, D., et al.. (2004). Ultra thin gate oxide characterization. The European Physical Journal Applied Physics. 27(1-3). 21–27.
17.
Ribes, G., S. Bruyère, M. Denais, et al.. (2004). Breakdown mechanisms in ultra-thin oxides: impact of carrier energy and current through substrate hot carrier stress study. Microelectronic Engineering. 72(1-4). 10–15. 4 indexed citations
18.
Monsieur, F., Emmanuel Vincent, G. Ribes, et al.. (2003). Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides. 40. 1–8. 1 indexed citations
19.
Monsieur, F., Emmanuel Vincent, D. Roy, et al.. (2003). Accurate and efficient design of experiment for reliability assessment. Application to a 20 Å gate oxide. 26–33. 2 indexed citations
20.
Monsieur, F., et al.. (2001). Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectronics Reliability. 41(9-10). 1295–1300. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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