R. Kapre

511 total citations
40 papers, 397 citations indexed

About

R. Kapre is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Spectroscopy. According to data from OpenAlex, R. Kapre has authored 40 papers receiving a total of 397 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 4 papers in Spectroscopy. Recurrent topics in R. Kapre's work include Semiconductor Quantum Structures and Devices (20 papers), Semiconductor Lasers and Optical Devices (18 papers) and Photonic and Optical Devices (14 papers). R. Kapre is often cited by papers focused on Semiconductor Quantum Structures and Devices (20 papers), Semiconductor Lasers and Optical Devices (18 papers) and Photonic and Optical Devices (14 papers). R. Kapre collaborates with scholars based in United States, India and Germany. R. Kapre's co-authors include W. T. Tsang, Supratik Guha, A. Madhukar, T. H. Chiu, P.F. Sciortino, W. T. Tsang, R. A. Logan, K. C. Rajkumar, Ming C. Wu and A. Madhukar and has published in prestigious journals such as Applied Physics Letters, Journal of Crystal Growth and IEEE Electron Device Letters.

In The Last Decade

R. Kapre

38 papers receiving 360 citations

Peers

R. Kapre
R. P. Bryan United States
J.S. Roberts United Kingdom
R. Thomä United States
G. M. Gur’yanov United States
K.R. Gleason United States
A. Stano Italy
R. P. Bryan United States
R. Kapre
Citations per year, relative to R. Kapre R. Kapre (= 1×) peers R. P. Bryan

Countries citing papers authored by R. Kapre

Since Specialization
Citations

This map shows the geographic impact of R. Kapre's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Kapre with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Kapre more than expected).

Fields of papers citing papers by R. Kapre

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Kapre. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Kapre. The network helps show where R. Kapre may publish in the future.

Co-authorship network of co-authors of R. Kapre

This figure shows the co-authorship network connecting the top 25 collaborators of R. Kapre. A scholar is included among the top collaborators of R. Kapre based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Kapre. R. Kapre is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kapre, R., et al.. (2021). Challenges to adopting adiabatic circuits for systems‐on‐a‐chip. IET Circuits Devices & Systems. 15(6). 581–593. 3 indexed citations
3.
Kapre, R., et al.. (2009). Hot-carrier reliability study and simulation methodology development for 65nm technology. 124–127. 2 indexed citations
4.
Lakshminarayanan, S., et al.. (2009). Standby power reduction and SRAM cell optimization for 65nm technology. 471–475. 12 indexed citations
5.
Kapre, R., et al.. (2007). SRAM Variability and Supply Voltage Scaling Challenges. 1999. 23–28. 21 indexed citations
6.
Puchner, H., et al.. (2006). Elimination of Single Event Latchup in 90nm SRAM Technologies. 721–722. 19 indexed citations
7.
8.
Choa, Fow‐Sen, et al.. (2002). Packaging relaxed semiconductor lasers with diluted waveguide structure. 335–337. 1 indexed citations
9.
Choa, Fow‐Sen, et al.. (1995). Alignment-relaxed 1.55 µm multiquantum welllasers fabricated using standardburied heterostructure laser processes. Electronics Letters. 31(13). 1058–1060. 17 indexed citations
10.
Chiu, T. H., M. D. Williams, John Ferguson, W. T. Tsang, & R. Kapre. (1994). Surface roughness during chemical beam etching and its remedy by enhanced cation diffusion. Applied Physics Letters. 65(4). 448–450. 11 indexed citations
11.
Tsang, W. T., T. H. Chiu, & R. Kapre. (1994). Monolayer chemical beam etching. Journal of Crystal Growth. 135(3-4). 377–382. 9 indexed citations
12.
Chiu, T. H., M. D. Williams, W. T. Tsang, & R. Kapre. (1994). Effects of cation diffusion on the monolayer control of chemical beam etching. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(6). 3369–3373. 3 indexed citations
13.
Tsang, W. T., T. H. Chiu, & R. Kapre. (1993). Monolayer chemical beam etching: Reverse molecular beam epitaxy. Applied Physics Letters. 63(25). 3500–3502. 37 indexed citations
14.
Tsang, W. T., R. Kapre, R. A. Logan, & T. Tanbun-Ek. (1993). Control of lasing wavelength in distributed feedback lasers by angling the active stripe with respect to the grating. IEEE Photonics Technology Letters. 5(9). 978–980. 24 indexed citations
15.
Tsang, W. T., R. Kapre, & P.F. Sciortino. (1993). Reactive chemical beam etching of InP inside a chemical beam epitaxial growth chamber using phosphorus trichloride. Applied Physics Letters. 62(17). 2084–2086. 30 indexed citations
18.
Kapre, R., A. Madhukar, & Supratik Guha. (1990). In/sub 0.25/Ga/sub 0.75/As/AlAs-based resonant tunneling diodes grown on prepatterned and nonpatterned GaAs. IEEE Electron Device Letters. 11(6). 270–272. 3 indexed citations
19.
Madhukar, A., et al.. (1990). Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates. Applied Physics Letters. 57(19). 2007–2009. 19 indexed citations
20.
Guha, Supratik, A. Madhukar, Liping Chen, K. C. Rajkumar, & R. Kapre. (1990). Interfacet migration and defect formation in heteroepitaxy on patterned substrates: AlGaAs and InGaAs on GaAs (100) in MBE. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1285. 160–160. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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