H. Puchner

1.1k total citations
53 papers, 614 citations indexed

About

H. Puchner is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, H. Puchner has authored 53 papers receiving a total of 614 indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Electrical and Electronic Engineering, 13 papers in Hardware and Architecture and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in H. Puchner's work include Semiconductor materials and devices (35 papers), Radiation Effects in Electronics (25 papers) and Integrated Circuits and Semiconductor Failure Analysis (24 papers). H. Puchner is often cited by papers focused on Semiconductor materials and devices (35 papers), Radiation Effects in Electronics (25 papers) and Integrated Circuits and Semiconductor Failure Analysis (24 papers). H. Puchner collaborates with scholars based in United States, Austria and France. H. Puchner's co-authors include Andrew J. Walker, S. Selberherr, F. Wrobel, Georgios Tsiligiannis, Frédéric Saigné, Luigi Dilillo, Alberto Bosio, Christopher Frost, A. Virazel and Arto Javanainen and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

H. Puchner

48 papers receiving 575 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Puchner United States 15 591 218 35 33 30 53 614
K.A. LaBel United States 14 531 0.9× 208 1.0× 37 1.1× 24 0.7× 37 1.2× 42 574
Y. Boulghassoul United States 16 882 1.5× 315 1.4× 39 1.1× 25 0.8× 35 1.2× 23 903
Shah M. Jahinuzzaman Canada 10 718 1.2× 280 1.3× 36 1.0× 42 1.3× 15 0.5× 19 739
Andrey V. Yanenko Russia 12 311 0.5× 95 0.4× 37 1.1× 39 1.2× 38 1.3× 38 346
S. M. Guertin United States 12 428 0.7× 101 0.5× 69 2.0× 34 1.0× 25 0.8× 24 446
H.S. Kim United States 13 432 0.7× 79 0.4× 34 1.0× 20 0.6× 29 1.0× 19 448
Megan C. Casey United States 14 588 1.0× 180 0.8× 17 0.5× 19 0.6× 21 0.7× 60 606
Pascale Gouker United States 12 622 1.1× 220 1.0× 19 0.5× 22 0.7× 21 0.7× 38 648
Armen V. Sogoyan Russia 12 343 0.6× 73 0.3× 33 0.9× 29 0.9× 21 0.7× 52 376
Gennady I. Zebrev Russia 13 443 0.7× 92 0.4× 19 0.5× 58 1.8× 20 0.7× 74 465

Countries citing papers authored by H. Puchner

Since Specialization
Citations

This map shows the geographic impact of H. Puchner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Puchner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Puchner more than expected).

Fields of papers citing papers by H. Puchner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Puchner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Puchner. The network helps show where H. Puchner may publish in the future.

Co-authorship network of co-authors of H. Puchner

This figure shows the co-authorship network connecting the top 25 collaborators of H. Puchner. A scholar is included among the top collaborators of H. Puchner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Puchner. H. Puchner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Puchner, H., N. Added, Eduardo Luiz Augusto Macchione, et al.. (2021). Testing a Fault Tolerant Mixed-Signal Design Under TID and Heavy Ions. Journal of Integrated Circuits and Systems. 16(3). 1–11. 2 indexed citations
2.
Puchner, H., Rubén García Alía, Manon Létiche, et al.. (2021). Neutron-induced effects on a self-refresh DRAM. Microelectronics Reliability. 128. 114406–114406. 7 indexed citations
3.
Puchner, H., et al.. (2020). Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM. HAL (Le Centre pour la Communication Scientifique Directe). 1–6. 9 indexed citations
4.
Javanainen, Arto, Georgios Tsiligiannis, S. D. LaLumondiere, et al.. (2018). Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory. IEEE Transactions on Nuclear Science. 65(8). 1708–1714. 14 indexed citations
5.
Tsiligiannis, Georgios, Christopher Frost, Ali Zadeh, et al.. (2016). Methodologies for the Statistical Analysis of Memory Response to Radiation. IEEE Transactions on Nuclear Science. 63(4). 2122–2128. 6 indexed citations
6.
Puchner, H., et al.. (2015). Analysis of Hamming EDAC SRAMs Using Simplified Birthday Statistics. IEEE Transactions on Nuclear Science. 62(4). 1771–1778. 5 indexed citations
7.
8.
Kapre, R., et al.. (2007). SRAM Variability and Supply Voltage Scaling Challenges. 1999. 23–28. 21 indexed citations
9.
10.
Puchner, H., et al.. (2007). High Voltage LDMOS Transistors utilizing a Triple Well Architecture. 201–204. 2 indexed citations
11.
Puchner, H., et al.. (2006). Elimination of Single Event Latchup in 90nm SRAM Technologies. 721–722. 19 indexed citations
12.
Puchner, H.. (2006). NBTI product level reliability for a low-power SRAM technology. Microelectronics Reliability. 47(6). 873–879. 1 indexed citations
13.
Heitzinger, Clemens, et al.. (2004). Feature-Scale Process Simulation and Accurate Capacitance Extraction for the Backend of a 100-nm Aluminum/TEOS Process. IEEE Transactions on Electron Devices. 51(7). 1129–1134. 4 indexed citations
14.
Xu, Yue, et al.. (2004). Process impact on SRAM alpha-particle SEU performance. 294–299. 24 indexed citations
15.
Puchner, H., et al.. (2004). NBTI reliability analysis for a 90 nm CMOS technology. 257–260. 24 indexed citations
16.
Heitzinger, Clemens, et al.. (2003). Simulation of void formation in interconnect lines. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5117. 445–445. 3 indexed citations
17.
18.
Aronowitz, S., H. Puchner, & Jonathan W. Kimball. (1999). Optimized subamorphizing silicon implants to modify diffusion and activation of arsenic, boron, and phosphorus implants for shallow junction creation. Journal of Applied Physics. 85(7). 3494–3498. 5 indexed citations
19.
Puchner, H., S. Aronowitz, & Jonathan W. Kimball. (1998). Impact of Pocket Implant and Channel Interface Modeling on the Reverse Short Channel Effect. European Solid-State Device Research Conference. 116–119. 3 indexed citations
20.
Leitner, Erich, et al.. (1995). Process simulation for the 1990s. Microelectronics Journal. 26(2-3). 203–215. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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