J.-L. Ogier

1.1k total citations · 1 hit paper
29 papers, 749 citations indexed

About

J.-L. Ogier is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Hardware and Architecture. According to data from OpenAlex, J.-L. Ogier has authored 29 papers receiving a total of 749 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 2 papers in Hardware and Architecture. Recurrent topics in J.-L. Ogier's work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). J.-L. Ogier is often cited by papers focused on Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). J.-L. Ogier collaborates with scholars based in France, Belgium and Switzerland. J.-L. Ogier's co-authors include R. Degraeve, Ph. Roussel, H.E. Maes, G. Groeseneken, R. Bellens, Michel Depas, D. Goguenheim, H. Aziza, G. Micolau and F. Lalande and has published in prestigious journals such as IEEE Transactions on Electron Devices, Electronics Letters and Solid-State Electronics.

In The Last Decade

J.-L. Ogier

28 papers receiving 707 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

1998 513 citations R. Degraeve, G. Groeseneken et al. IEEE Transactions on Electron Devices profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J.-L. Ogier France	7	720	171	86	54	27	29	749
T. Nigam United States	22	1.3k 1.9×	191 1.1×	85 1.0×	80 1.5×	33 1.2×	58	1.4k
Siddarth Krishnan United States	19	873 1.2×	126 0.7×	72 0.8×	64 1.2×	14 0.5×	65	892
R.‐P. Vollertsen Germany	15	804 1.1×	117 0.7×	102 1.2×	32 0.6×	14 0.5×	52	839
S. Bruyère France	14	1.0k 1.4×	190 1.1×	99 1.2×	52 1.0×	19 0.7×	56	1.0k
R. Bellens Belgium	13	1.6k 2.2×	243 1.4×	117 1.4×	75 1.4×	41 1.5×	40	1.6k
G. Ribes France	14	924 1.3×	121 0.7×	55 0.6×	54 1.0×	14 0.5×	49	940
M. Denais France	14	1.4k 1.9×	148 0.9×	38 0.4×	70 1.3×	18 0.7×	37	1.4k
H.F. Luan United States	16	639 0.9×	135 0.8×	52 0.6×	79 1.5×	14 0.5×	48	676
K.F. Schuegraf United States	8	827 1.1×	197 1.2×	46 0.5×	91 1.7×	12 0.4×	11	858
Hongxia Guo China	13	610 0.8×	166 1.0×	66 0.8×	31 0.6×	30 1.1×	121	709

Countries citing papers authored by J.-L. Ogier

Since Specialization

Citations

This map shows the geographic impact of J.-L. Ogier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.-L. Ogier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.-L. Ogier more than expected).

Fields of papers citing papers by J.-L. Ogier

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.-L. Ogier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.-L. Ogier. The network helps show where J.-L. Ogier may publish in the future.

Co-authorship network of co-authors of J.-L. Ogier

This figure shows the co-authorship network connecting the top 25 collaborators of J.-L. Ogier. A scholar is included among the top collaborators of J.-L. Ogier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.-L. Ogier. J.-L. Ogier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Julien, F. H., et al.. (2014). Study of gate contact over active area. 1–4. 3 indexed citations

Ogier, J.-L., et al.. (2014). Degradation mechanism during gate stress at high electrical field on high voltage MOSFET for non-volatile memory applications. 147–150. 1 indexed citations

Ogier, J.-L., et al.. (2013). MOSFET layout modifications for hump effect removal. Microelectronic Engineering. 109. 168–171. 2 indexed citations

Ogier, J.-L., et al.. (2013). Access resistor modelling for EEPROM’s retention test vehicle. Microelectronics Reliability. 53(9-11). 1218–1223. 1 indexed citations

Aziza, H., et al.. (2012). Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test. Solid-State Electronics. 78. 151–155. 1 indexed citations

Micolau, G., et al.. (2012). Data retention under gate stress on a NVM array. Solid-State Electronics. 78. 80–86. 3 indexed citations

Portal, J.M., et al.. (2012). Threshold voltage asymmetric degradation on octagonal MOSFET during HCI stress. Electronics Letters. 48(14). 879–881. 3 indexed citations

Micolau, G., et al.. (2011). An evaluation of the extrinsic cells number in a memory array using cross-correlation products and deconvolution: an instance of a microelectronics experimental inverse problem. Inverse Problems in Science and Engineering. 19(8). 1043–1062. 1 indexed citations

Aziza, Hassen, et al.. (2011). Non volatile memory reliability prediction based on oxide defect generation rate during stress and retention tests. 1–2. 2 indexed citations

10.

Portal, J.M., et al.. (2011). Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress. Microelectronics Reliability. 51(9-11). 1561–1563. 9 indexed citations

11.

Portal, Jean‐Michel, et al.. (2011). Octagonal MOSFET: Reliable device for low power analog applications. 295–298. 4 indexed citations

12.

Roux, Catherine, et al.. (2007). A new method to quantify retention-failed cells of an EEPROM CAST. Microelectronics Reliability. 47(9-11). 1609–1613. 5 indexed citations

13.

Goguenheim, D., et al.. (2007). A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories. Microelectronics Reliability. 47(9-11). 1373–1377. 2 indexed citations

14.

Goguenheim, D., et al.. (2006). Long Range Statistical Lifetime Prediction of UltraThin SiO2 Oxides: Influence of Accelerated Ageing Methods and Extrapolation Models. 1. 528–531. 3 indexed citations

15.

Degraeve, R., et al.. (2002). A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides. 327–330. 10 indexed citations

16.

Degraeve, R., J.-L. Ogier, R. Bellens, et al.. (1998). A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown. IEEE Transactions on Electron Devices. 45(2). 472–481. 110 indexed citations

17.

Degraeve, R., G. Groeseneken, R. Bellens, et al.. (1998). New insights in the relation between electron trap generation and the statistical properties of oxide breakdown. IEEE Transactions on Electron Devices. 45(4). 904–911. 513 indexed citations breakdown →

18.

Ogier, J.-L., R. Degraeve, G. Groeseneken, & H.E. Maes. (1996). On the Polarity Dependence of Oxide Breakdown in MOS-Devices with N+ and P+ Polysilicon Gate. European Solid-State Device Research Conference. 763–766. 5 indexed citations

19.

Degraeve, R., Ph. Roussel, J.-L. Ogier, G. Groeseneken, & H.E. Maes. (1996). A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions. Microelectronics Reliability. 36(11-12). 1651–1654. 6 indexed citations

20.

Ogier, J.-L., R. Degraeve, Ph. Roussel, G. Groeseneken, & H.E. Maes. (1995). Analysis of the Early-Failure Rate Prediction of Time-Dependent-Dielectric Breakdown in Thin Oxides. European Solid-State Device Research Conference. 299–302. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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