F Guarin

1.9k total citations
82 papers, 1.0k citations indexed

About

F Guarin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, F Guarin has authored 82 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 79 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in F Guarin's work include Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (45 papers) and Radio Frequency Integrated Circuit Design (25 papers). F Guarin is often cited by papers focused on Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (45 papers) and Radio Frequency Integrated Circuit Design (25 papers). F Guarin collaborates with scholars based in United States, Mexico and India. F Guarin's co-authors include Stewart E. Rauch, Giuseppe La Rosa, P. Srinivasan, G. Freeman, Zhijian Yang, Subramanian S. Iyer, M. S. Shur, Dmitry Veksler, E.F. Crabbé and William Stillman and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

F Guarin

76 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
F Guarin United States	18	1000	162	83	76	75	82	1.0k
J. Bergman United States	13	482 0.5×	270 1.7×	101 1.2×	42 0.6×	60 0.8×	38	514
Shigehisa Tanaka Japan	16	790 0.8×	376 2.3×	50 0.6×	45 0.6×	79 1.1×	97	833
Rahul Jayaraman United States	8	511 0.5×	68 0.4×	29 0.3×	75 1.0×	45 0.6×	26	620
R. Grundbacher United States	15	696 0.7×	375 2.3×	177 2.1×	59 0.8×	47 0.6×	73	771
N. Kernevez France	10	396 0.4×	117 0.7×	37 0.4×	83 1.1×	106 1.4×	21	458
C. Moglestue Germany	14	712 0.7×	431 2.7×	75 0.9×	108 1.4×	89 1.2×	43	805
M. Matloubian United States	16	764 0.8×	429 2.6×	112 1.3×	41 0.5×	91 1.2×	69	809
J.J. Komiak United States	15	685 0.7×	180 1.1×	359 4.3×	37 0.5×	37 0.5×	58	742
Aritra Acharyya India	13	477 0.5×	220 1.4×	110 1.3×	54 0.7×	45 0.6×	86	559
J.J. Rosenberg United States	10	522 0.5×	302 1.9×	44 0.5×	59 0.8×	53 0.7×	33	600

Countries citing papers authored by F Guarin

Since Specialization

Citations

This map shows the geographic impact of F Guarin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F Guarin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F Guarin more than expected).

Fields of papers citing papers by F Guarin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F Guarin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F Guarin. The network helps show where F Guarin may publish in the future.

Co-authorship network of co-authors of F Guarin

This figure shows the co-authorship network connecting the top 25 collaborators of F Guarin. A scholar is included among the top collaborators of F Guarin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F Guarin. F Guarin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Srinivasan, P., et al.. (2023). Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications. IEEE Transactions on Device and Materials Reliability. 23(3). 412–418.

Srinivasan, P., Hui Xu, Oscar D. Restrepo, et al.. (2023). RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications. 1–6. 3 indexed citations

Dixit, Abhisek, et al.. (2022). RF Reliability of CMOS-Based Power Amplifier Cell for 5G mmWave Applications. 4B.3–1. 3 indexed citations

Srinivasan, P., et al.. (2022). Impact of Chuck Temperature on Flicker Noise (1/f) Performance of PDSOI n-channel MOSFETs. 1–4. 1 indexed citations

Srinivasan, P., et al.. (2022). Characterization and Analysis of Hot Carrier Degradation Under DC and Large-Signal RF Stress in a PDSOI Floating-Body NFET-Based Power Amplifier Cell Under WiFi Operating Conditions. IEEE Transactions on Device and Materials Reliability. 22(2). 232–238. 2 indexed citations

Srinivasan, P., et al.. (2022). Superior Reliability and Low Self-Heating of a 45nm CMOS 39-GHz Power Amplifier for 5G mmWave Applications. thlb 2. 195–198. 1 indexed citations

Guarin, F, et al.. (2021). Impact of Hot Carrier Degradation on DC and RF Performance of 45-nm Power Amplifier Cell. 56. 1–4. 4 indexed citations

Kerber, A., et al.. (2020). Reliability Characterization of Ring Oscillator Circuits for Advanced CMOS Technologies. IEEE Transactions on Device and Materials Reliability. 20(2). 230–241. 14 indexed citations

Vishnoi, Rajat, et al.. (2020). First Time Enablement of RF Reliability Simulation Using Cadence Relxpert. 1–3. 2 indexed citations

10.

Rabie, Mohamed A., et al.. (2020). Thermal Characterization and TCAD Modeling of a Power Amplifier in 45RFSOI for 5G mmWave Applications. 1–5. 5 indexed citations

11.

Kerber, A., P. Srinivasan, S. Cimino, et al.. (2017). Device reliability metric for end-of-life performance optimization based on circuit level assessment. 2D–3.1. 25 indexed citations

12.

Guarin, F, et al.. (2015). Self-heating and its implications on hot carrier reliability evaluations. 4A.4.1–4A.4.6. 49 indexed citations

13.

Gutiérrez-D, Edmundo A., et al.. (2013). A negative differential resistance effect implemented with a single MOSFET from 375 k down to 80 k. 86. 330–333. 2 indexed citations

14.

Stillman, William, Dmitry Veksler, Tamer A. Elkhatib, et al.. (2008). Sub-terahertz testing of silicon MOSFET. Electronics Letters. 44(22). 1325–1327. 27 indexed citations

15.

Sutton, Akil K., B.M. Haugerud, A. P. Gnana Prakash, et al.. (2005). A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs. IEEE Transactions on Nuclear Science. 52(6). 2358–2365. 41 indexed citations

16.

Freeman, G., B. Jagannathan, Zhijian Yang, et al.. (2003). Sige HBT performance and reliability trends through fT of 350GHz. 332–338. 5 indexed citations

17.

Guarin, F, et al.. (2003). Avalanche current induced hot carrier degradation in 200 GHz SiGe heterojunction bipolar transistors. 339–343. 20 indexed citations

18.

Hargrove, M., S. Crowder, E. Nowak, et al.. (2002). High-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delay. 627–630. 26 indexed citations

19.

Wright, N. J., et al.. (1998). Photoluminescence Of Sisnc Alloys Grown On (100) Si Substrates. MRS Proceedings. 533.

20.

Berger, Paul R., et al.. (1997). Near band edge photoluminescence from pseudomorphic tensially strained Si0.985C0.015 alloy. Thin Solid Films. 294(1-2). 122–124. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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