F Guarin
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- Semiconductor materials and devices 59
- Advancements in Semiconductor Devices and Circuit Design 45
- Radio Frequency Integrated Circuit Design 25
- Integrated Circuits and Semiconductor Failure Analysis 20
- Silicon Carbide Semiconductor Technologies 9
- Electrostatic Discharge in Electronics 8
- Ferroelectric and Negative Capacitance Devices 5
- Condensed Matter Physics top 10%
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- Semiconductor materials and interfaces 5
- Co-authors
- Stewart E. RauchGiuseppe La RosaP. SrinivasanG. FreemanZhijian YangDmitry VekslerWilliam StillmanE.F. Crabbé
- Cited by
- Electrical and Electronic EngineeringCondensed Matter PhysicsAtomic and Molecular Physics, and Optics
- Journals
- IEEE Transactions on Device and Materials Reliability (8 papers)IEEE Electron Device Letters (6 papers)IEEE Journal of the Electron Devices Society (5 papers)
- Partner nations
- United StatesMexicoIndia
In The Last Decade
F Guarin
76 papers receiving 1.0k citations
Peers
Comparison fields: 5 of 28
- Electrical and Electronic Engineering 1000
- Condensed Matter Physics 83
- Atomic and Molecular Physics, and Optics 162
- Astronomy and Astrophysics 55
- Hardware and Architecture 13
Countries citing papers authored by F Guarin
This map shows the geographic impact of F Guarin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F Guarin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F Guarin more than expected).
Fields of papers citing papers by F Guarin
This network shows the impact of papers produced by F Guarin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F Guarin. The network helps show where F Guarin may publish in the future.
Co-authorship network
The 25 scholars most cited alongside F Guarin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2023 | 0 | |
| 2 | 2023 | 3 | |
| 3 | 2023 | 1 | |
| 4 | 2023 | 3 | |
| 5 | 2022 | 1 | |
| 6 | 2022 | 3 | |
| 7 | 2022 | 1 | |
| 8 | 2022 | 2 | |
| 9 | 2021 | 4 | |
| 10 | 2020 | 14 | |
| 11 | 2017 | 25 | |
| 12 | 2013 | 2 | |
| 13 | 2008 | 27 | |
| 14 | 2005 | 41 | |
| 15 | Sige HBT performance and reliability trends through fT of 350GHz | 2003 | 5 |
| 16 | 2003 | 20 | |
| 17 | 2003 | 7 | |
| 18 | 2002 | 76 | |
| 19 | 1998 | 0 | |
| 20 | 1997 | 1 |
About F Guarin
F Guarin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, having authored 82 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (45 papers), Radio Frequency Integrated Circuit Design (25 papers), Integrated Circuits and Semiconductor Failure Analysis (20 papers), Silicon Carbide Semiconductor Technologies (9 papers), Electrostatic Discharge in Electronics (8 papers), Semiconductor materials and interfaces (5 papers) and Ferroelectric and Negative Capacitance Devices (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (1000 citations), Condensed Matter Physics (83 citations) and Atomic and Molecular Physics, and Optics (162 citations). F Guarin has collaborated with scholars based in United States, Mexico and India. Frequent co-authors include Stewart E. Rauch, Giuseppe La Rosa, P. Srinivasan, G. Freeman, Zhijian Yang, Dmitry Veksler, William Stillman, E.F. Crabbé, Subramanian S. Iyer and M. S. Shur. Their work appears in journals such as IEEE Transactions on Device and Materials Reliability, IEEE Electron Device Letters, IEEE Journal of the Electron Devices Society, Applied Physics Letters and IEEE Transactions on Electron Devices.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.