Z. Chbili

426 total citations
24 papers, 352 citations indexed

About

Z. Chbili is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Z. Chbili has authored 24 papers receiving a total of 352 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 5 papers in Materials Chemistry and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Z. Chbili's work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers) and Silicon Carbide Semiconductor Technologies (11 papers). Z. Chbili is often cited by papers focused on Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers) and Silicon Carbide Semiconductor Technologies (11 papers). Z. Chbili collaborates with scholars based in United States, Morocco and Japan. Z. Chbili's co-authors include Dimitris E. Ioannou, A. Kerber, Kin P. Cheung, J. P. Campbell, Qiliang Li, Jason T. Ryan, Asahiko Matsuda, Akram Salman, D. Misra and J. M. Fastenau and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and IEEE Transactions on Device and Materials Reliability.

In The Last Decade

Z. Chbili

22 papers receiving 335 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Z. Chbili United States 10 347 36 35 20 13 24 352
C. Perrot France 8 159 0.5× 45 1.3× 38 1.1× 9 0.5× 18 1.4× 15 188
S. C. Song United States 9 268 0.8× 39 1.1× 21 0.6× 32 1.6× 19 1.5× 37 280
G. Boccardi Belgium 10 213 0.6× 33 0.9× 45 1.3× 40 2.0× 19 1.5× 33 222
I.-C. Chen United States 9 239 0.7× 29 0.8× 25 0.7× 29 1.4× 12 0.9× 22 253
R. Schreutelkamp Belgium 10 257 0.7× 41 1.1× 51 1.5× 39 1.9× 7 0.5× 31 276
S. Locorotondo Belgium 10 266 0.8× 33 0.9× 51 1.5× 51 2.5× 13 1.0× 19 269
T. Iizuka Japan 9 411 1.2× 34 0.9× 21 0.6× 32 1.6× 14 1.1× 61 424
P. Fonteneau France 11 254 0.7× 30 0.8× 18 0.5× 12 0.6× 12 0.9× 22 262
N. Loubet United States 8 230 0.7× 40 1.1× 65 1.9× 28 1.4× 10 0.8× 15 249
Dimitris P. Ioannou United States 11 308 0.9× 34 0.9× 16 0.5× 29 1.4× 11 0.8× 33 312

Countries citing papers authored by Z. Chbili

Since Specialization
Citations

This map shows the geographic impact of Z. Chbili's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Z. Chbili with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Z. Chbili more than expected).

Fields of papers citing papers by Z. Chbili

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Z. Chbili. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Z. Chbili. The network helps show where Z. Chbili may publish in the future.

Co-authorship network of co-authors of Z. Chbili

This figure shows the co-authorship network connecting the top 25 collaborators of Z. Chbili. A scholar is included among the top collaborators of Z. Chbili based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Z. Chbili. Z. Chbili is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Chbili, Z., A. Kerber, S. Cimino, et al.. (2019). Self-Heating Effects on Hot Carrier Degradation and Its Impact on Logic Circuit Reliability. IEEE Transactions on Device and Materials Reliability. 19(2). 249–254. 16 indexed citations
3.
4.
Toledano-Luque, M., T. Nigam, P. Srinivasan, et al.. (2019). Reliability-Aware FinFET Design. 218–221. 1 indexed citations
5.
6.
Restrepo, Oscar D., Jeffrey B. Johnson, Mohit Bajaj, et al.. (2018). Bottom-up methodology for predictive simulations of self-heating in aggressively scaled process technologies. 6F.6–1. 10 indexed citations
7.
Chbili, Z., et al.. (2018). Self-Heating Assessment on Bulk FinFET Devices Through Characterization and Predictive Simulation. IEEE Transactions on Device and Materials Reliability. 18(2). 133–138. 17 indexed citations
8.
Kerber, A., P. Srinivasan, S. Cimino, et al.. (2017). Device reliability metric for end-of-life performance optimization based on circuit level assessment. 2D–3.1. 25 indexed citations
9.
Chbili, Z., et al.. (2017). Influence of lucky defect distributions on early TDDB failures in SiC power MOSFETs. 1–4. 4 indexed citations
10.
Chbili, Z., et al.. (2017). Fast TDDB monitoring for BEOL interconnect dielectrics. 1–4. 3 indexed citations
11.
Chbili, Z., et al.. (2016). Fast TDDB for early reliability monitoring. 53–56. 4 indexed citations
12.
Chbili, Z., et al.. (2016). Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors. Materials science forum. 858. 615–618. 28 indexed citations
13.
Chbili, Z., Asahiko Matsuda, Jason T. Ryan, et al.. (2016). Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs. IEEE Transactions on Electron Devices. 63(9). 3605–3613. 72 indexed citations
14.
Chbili, Z. & A. Kerber. (2016). Self-heating impact on TDDB in bulk FinFET devices: Uniform vs Non-uniform Stress. 45–48. 18 indexed citations
15.
Chbili, Z., et al.. (2015). SOI FED-SRAM Cell: Structure and Operation. IEEE Transactions on Electron Devices. 62(9). 2865–2870. 21 indexed citations
16.
Chbili, Z., et al.. (2015). Massively parallel TDDB testing: SiC power devices. 91–94. 7 indexed citations
17.
Chbili, Z., Kin P. Cheung, Philip M. Campbell, et al.. (2013). Unusual bias temperature instability in SiC DMOSFET. 90–93. 4 indexed citations
18.
Chbili, Z., et al.. (2013). SOI Field-Effect Diode DRAM Cell: Design and Operation. IEEE Electron Device Letters. 34(8). 1002–1004. 43 indexed citations
19.
Ioannou, Dimitris E., et al.. (2012). Physics and design of a SOI Field-Effect-Diode memory cell. 1–2. 3 indexed citations
20.
Chbili, Z., Yang Yang, Qiliang Li, & Dimitris E. Ioannou. (2011). Design and analysis of multi-gate field-effect-diodes for embedded memory. 1–2. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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