G. E. Bulman

2.1k citations

59 papers · 1.7k indexed · h-index 19

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 28
Instrumentation top 5%
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 20
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 10
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 16
- Advanced Semiconductor Detectors and Materials 11
- Plasma Diagnostics and Applications 7
Mechanics of Materials
- Metal and Thin Film Mechanics 12
Materials Chemistry
- Advanced Thermoelectric Materials and Devices 8

Co-authors: C. Youtsey I. Adesida G. E. Stillman V. M. Robbins L. W. Cook Lucia Romano Hoyoul Kong J. A. Edmond
Cited by: Condensed Matter Physics Instrumentation Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters (14 papers)Journal of Electronic Materials (6 papers)IEEE Transactions on Electron Devices (4 papers)
Partner nations: United States China United Kingdom

In The Last Decade

G. E. Bulman

58 papers receiving 1.6k citations

Peers

Countries citing papers authored by G. E. Bulman

Since Specialization

Citations

This map shows the geographic impact of G. E. Bulman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. E. Bulman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. E. Bulman more than expected).

Fields of papers citing papers by G. E. Bulman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. E. Bulman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. E. Bulman. The network helps show where G. E. Bulman may publish in the future.

Co-authorship network

The 25 scholars most cited alongside G. E. Bulman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. E. Bulman Line = papers co-authored together G. E. Bulman links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Superlattice-based thin-film thermoelectric modules with high cooling fluxes Nature Communications ·G. E. Bulman,吉田和浩,Jay Lewis,张秀莲,Michael Manno,Avram Bar‐Cohen,Bao Yang	2016	164
2	Thermal Management of Ultra Intense Hot Spots With Two-Phase Multi-Microchannels and Embedded Thermoelectric Cooling Jackson B. Marcinichen,Gisella Arroyo,John R. Thome,G. E. Bulman,Jay Lewis,R. Venkatasubramanian	2013	5
3	Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Ashok K. Sood,Hajar Roudaki,Yash R. Puri,Nicole DiLello,Judy L. Hoyt,O.V. Lyubchenko,William P. Nye,Simo Palokangas,G. E. Bulman,R. Venkatasubramanian,Arvind I. D'Souza,A. F. Hooper	2009	7
4	Three-Stage Thin-Film Superlattice Thermoelectric Multistage Microcoolers with a ΔT max of 102 K Journal of Electronic Materials ·G. E. Bulman,Martynas Dobrovolskis,M. Stoye,R. Venkatasubramanian,Jenni Reuben,K MASON	2009	13
5	Dry and Wet Etching for Group III – Nitrides MRS Internet Journal of Nitride Semiconductor Research ·I. Adesida,C. Youtsey,A. T. Ping,Farid Khan,Lucia Romano,G. E. Bulman	1999	27
6	Mechanism of efficient ultraviolet lasing in GaN/AlGaN separate-confinement heterostructures Applied Physics Letters ·S. Bidnyk,Cèsar Gonzàlez,B. D. Little,Young-Kil Kwon,J. J. Song,G. E. Bulman,Hoyoul Kong,T. J. Schmidt	1999	18
7	Morphology of nickel and nickel/gold contacts to gallium nitride Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Hari Venugopalan,Suzanne E. Mohney,J. M. DeLucca,B. P. Luther,G. E. Bulman	1998	14
8	Gain characteristics of InGaN/GaN quantum well diode lasers Applied Physics Letters ·藤浩明,Martin Kuball,A. V. Nurmikko,G. E. Bulman,K. Doverspike,S.T. Sheppard,T. W. Weeks,М.Л. Лимонтова,Hoyoul Kong,Blaisdell,J. A. Edmond	1998	46
9	Dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures Journal of Applied Physics ·W. Shan,Shijie Xu,B. D. Little,X. C. Xie,MU Petersen,G. E. Bulman,Hoyoul Kong,М.Л. Лимонтова,S. Krishnankutty	1997	7
10	Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC Electronics Letters ·G. E. Bulman,K. Doverspike,S.T. Sheppard,T. W. Weeks,Hoyoul Kong,Blaisdell,J. A. Edmond,J.D. Brown,Hilde Lamo,J. F. Schetzina	1997	112
11	Highly anisotropic photoenhanced wet etching of n-type GaN Applied Physics Letters ·C. Youtsey,I. Adesida,G. E. Bulman	1997	168
12	Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride MRS Proceedings ·Hari Venugopalan,Suzanne E. Mohney,B. P. Luther,J. M. DeLucca,Scott D. Wolter,Joan M. Redwing,G. E. Bulman	1997	15
13	Status of Nitride Based Light Emitting and Laser Diodes on SiC MRS Proceedings ·K. Doverspike,G. E. Bulman,S.T. Sheppard,Hoyoul Kong,М.Л. Лимонтова,Blaisdell,T. W. Weeks,J. A. Edmond,J.D. Brown,J. Lee,J. F. Schetzina,Yoon‐Kyu Song,Martin Kuball,A. V. Nurmikko	1997	13
14	Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates Applied Physics Letters ·W. Shan,A. J. Fischer,J. J. Song,G. E. Bulman,Hoyoul Kong,М.Л. Лимонтова,W. G. Perry,M. D. Bremser,R. F. Davis	1996	45
15	Photoluminescence, Reflectance, and Magnetospectroscopy of Shallow Excitons in GaN MRS Proceedings ·B. J. Skromme,He Zhao,B. Goldenberg,Hoyoul Kong,М.Л. Лимонтова,G. E. Bulman,C. R. Abernathy,S. J. Pearton	1996	1
16	The determination of impact ionization coefficients in IEEE Transactions on Electron Devices ·G. E. Bulman,V. M. Robbins,G. E. Stillman	1985	44
17	Ion implanted lateral In<inf>.2</inf>Ga<inf>.8</inf>As/GaAs strained-layer superlattice photodetector G. E. Bulman,Sandra Flygare,A. Garcia Nalda,L. R. Dawson,R. M. Biefeld,T. E. Zipperian	1984	3
18	Experimental determination of impact ionization coefficients in IEEE Electron Device Letters ·G. E. Bulman,V. M. Robbins,Kevin F. Brennan,K. Hess,G. E. Stillman	1983	109
19	Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements Applied Physics Letters ·L. W. Cook,G. E. Bulman,G. E. Stillman	1982	122
20	Electroabsorption produced mixed injection and its effect on the determination of ionization coefficients Solid-State Electronics ·G. E. Bulman,L. W. Cook,G. E. Stillman	1982	20

About G. E. Bulman

G. E. Bulman is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Instrumentation, having authored 59 papers that have together received 1.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (28 papers), Semiconductor Quantum Structures and Devices (20 papers), Semiconductor materials and devices (16 papers), Metal and Thin Film Mechanics (12 papers), Advanced Semiconductor Detectors and Materials (11 papers), Ga2O3 and related materials (10 papers), Advanced Thermoelectric Materials and Devices (8 papers) and Plasma Diagnostics and Applications (7 papers). The work is most often cited by research in Condensed Matter Physics (822 citations), Instrumentation (112 citations), Atomic and Molecular Physics, and Optics (684 citations), Electronic, Optical and Magnetic Materials (381 citations) and Electrical and Electronic Engineering (1.0k citations). G. E. Bulman has collaborated with scholars based in United States, China and United Kingdom. Frequent co-authors include C. Youtsey, I. Adesida, G. E. Stillman, V. M. Robbins, L. W. Cook, Lucia Romano, Hoyoul Kong, J. A. Edmond, K. Doverspike and Jay Lewis. Their work appears in journals such as Applied Physics Letters, Journal of Electronic Materials, IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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