Shigetaka Tomiya

2.6k total citations · 1 hit paper
94 papers, 2.1k citations indexed

About

Shigetaka Tomiya is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Shigetaka Tomiya has authored 94 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 45 papers in Atomic and Molecular Physics, and Optics and 40 papers in Condensed Matter Physics. Recurrent topics in Shigetaka Tomiya's work include GaN-based semiconductor devices and materials (40 papers), Semiconductor Quantum Structures and Devices (36 papers) and 2D Materials and Applications (12 papers). Shigetaka Tomiya is often cited by papers focused on GaN-based semiconductor devices and materials (40 papers), Semiconductor Quantum Structures and Devices (36 papers) and 2D Materials and Applications (12 papers). Shigetaka Tomiya collaborates with scholars based in Japan, Taiwan and United States. Shigetaka Tomiya's co-authors include Masao Ikeda, S. Usui, Dharam Pal Gosain, Harry E. Ruda, T. Hino, T. Miyajima, Katsunori Yanashima, Shigeki Hashimoto, Shu Goto and M. Takeya and has published in prestigious journals such as Physical Review Letters, Advanced Materials and Nano Letters.

In The Last Decade

Shigetaka Tomiya

86 papers receiving 2.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction

1997 546 citations Dharam Pal Gosain, Shigetaka Tomiya et al. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Shigetaka Tomiya Japan	22	1.1k	978	919	820	763	94	2.1k
Lorenzo Rigutti France	29	990 0.9×	1.3k 1.3×	1.2k 1.3×	792 1.0×	1.3k 1.7×	106	2.7k
M. E. Twigg United States	28	1.5k 1.4×	804 0.8×	523 0.6×	815 1.0×	413 0.5×	156	2.3k
A. Ougazzaden France	29	2.0k 1.7×	998 1.0×	1.1k 1.3×	1.3k 1.6×	377 0.5×	230	3.2k
R. Songmuang Germany	27	946 0.8×	869 0.9×	673 0.7×	1.2k 1.5×	803 1.1×	48	2.1k
A. Rizzi Germany	22	623 0.5×	681 0.7×	908 1.0×	562 0.7×	334 0.4×	92	1.5k
Gwénolé Jacopin France	31	2.0k 1.8×	1.9k 2.0×	1.6k 1.7×	822 1.0×	914 1.2×	95	3.7k
B. S. Krusor United States	25	1.0k 0.9×	493 0.5×	881 1.0×	582 0.7×	413 0.5×	72	1.8k
D. M. Schaadt Germany	18	1.1k 0.9×	952 1.0×	412 0.4×	661 0.8×	813 1.1×	101	2.1k
Eirini Sarigiannidou France	22	589 0.5×	916 0.9×	805 0.9×	479 0.6×	325 0.4×	79	1.6k
Kris A. Bertness United States	28	967 0.8×	1.2k 1.2×	1.3k 1.4×	689 0.8×	1.1k 1.4×	106	2.5k

Countries citing papers authored by Shigetaka Tomiya

Since Specialization

Citations

This map shows the geographic impact of Shigetaka Tomiya's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shigetaka Tomiya with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shigetaka Tomiya more than expected).

Fields of papers citing papers by Shigetaka Tomiya

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shigetaka Tomiya. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shigetaka Tomiya. The network helps show where Shigetaka Tomiya may publish in the future.

Co-authorship network of co-authors of Shigetaka Tomiya

This figure shows the co-authorship network connecting the top 25 collaborators of Shigetaka Tomiya. A scholar is included among the top collaborators of Shigetaka Tomiya based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shigetaka Tomiya. Shigetaka Tomiya is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Tatsumi, Tetsuya, et al.. (2025). Improvement of MoS₂ film quality using sputtering processes controlling particle- and energy-flux followed by sulfur-vapor annealing. Japanese Journal of Applied Physics. 64(2). 21001–21001.

Kawanago, Takamasa, Iriya Muneta, Kazuo Tsutsui, et al.. (2024). Reduction of contact resistance to PVD-MoS₂ film using aluminum–scandium alloy (AISc) edge contact. 1–3.

Nomura, Ken‐ichi, Shogo Fukushima, Shinnosuke Hattori, et al.. (2024). Thermoelectric Grain Boundary in Monolayer MoS₂. The Journal of Physical Chemistry C. 128(38). 16172–16178. 2 indexed citations

Muneta, Iriya, Kuniyuki Kakushima, Tetsuya Tatsumi, et al.. (2024). Improvement of MoS₂ Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid. IEEE Journal of the Electron Devices Society. 13. 15–23. 2 indexed citations

Tatsumi, Tetsuya, et al.. (2024). Conductivity Enhancement of PVD-WS₂ Films Using Cl₂-Plasma Treatment Followed by Sulfur-Vapor Annealing. IEEE Journal of the Electron Devices Society. 12. 390–398. 1 indexed citations

Tōyama, S., et al.. (2023). Real-space observation of a two-dimensional electron gas at semiconductor heterointerfaces. Nature Nanotechnology. 18(5). 521–528. 27 indexed citations

Fuutagawa, Noriyuki, Jun Uzuhashi, Tadakatsu Ohkubo, et al.. (2023). Multimodal Analysis of InAs/InGaAlAs Quantum Dots Using Transmission Electron Microscopy and Atom Probe Tomography. Microscopy and Microanalysis. 29(Supplement_1). 1970–1971. 1 indexed citations

Xie, Yunchao, et al.. (2023). An interpretable and transferrable vision transformer model for rapid materials spectra classification. Digital Discovery. 3(2). 369–380. 9 indexed citations

Yamaguchi, Atsushi, et al.. (2021). Impact of potential fluctuation on temperature dependence of optical gain characteristics in InGaN quantum-well laser diodes. Japanese Journal of Applied Physics. 60(12). 122003–122003. 3 indexed citations

10.

Hamada, Masaya, Satoshi Igarashi, Iriya Muneta, et al.. (2021). WS₂ Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO₂ Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box. IEEE Journal of the Electron Devices Society. 9. 1117–1124. 6 indexed citations

11.

Tomiya, Shigetaka, Tetsuya Tatsumi, Masaya Hamada, et al.. (2021). Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing. IEEE Journal of the Electron Devices Society. 9. 278–285. 12 indexed citations

12.

Tomiya, Shigetaka, et al.. (2019). Influence of photoexcited carriers on compositional measurements by APT: AlGaN alloy case study. Japanese Journal of Applied Physics. 58(9). 96505–96505. 1 indexed citations

13.

Nishi, Toshio, et al.. (2019). Effects of gas cluster ion beam sputtering on the molecular orientation of organic semiconductor films: Ultraviolet photoelectron spectroscopy study of [6]phenacene. Applied Physics Letters. 114(23). 3 indexed citations

14.

Sánchez‐Santolino, Gabriel, N.R. Lugg, Takehito Seki, et al.. (2018). Probing the Internal Atomic Charge Density Distributions in Real Space. ACS Nano. 12(9). 8875–8881. 42 indexed citations

15.

Tanaka, Shinji, et al.. (2016). Atom probe tomography of compositional fluctuation in GaInN layers. Japanese Journal of Applied Physics. 55(5S). 05FM04–05FM04. 6 indexed citations

16.

Tomiya, Shigetaka, et al.. (2011). Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits. Applied Physics Letters. 98(18). 49 indexed citations

17.

Tomiya, Shigetaka, Kenji Ishikawa, Ryosuke MATSUMOTO, et al.. (2011). Analysis of GaN Damage Induced by Cl₂/SiCl₄/Ar Plasma. Japanese Journal of Applied Physics. 50(8S1). 08JE03–08JE03. 40 indexed citations

18.

Sato, T., T. Suzuki, Shigetaka Tomiya, & Shigeki Yamada. (2006). Dislocation-limited electron transport in InSb grown on GaAs(001). Physica B Condensed Matter. 376-377. 579–582. 12 indexed citations

19.

Tomiya, Shigetaka, Hiroyuki Okuyama, & Akira Ishibashi. (2000). Relation between interface morphology and recombination-enhanced defect reaction phenomena in II–VI light emitting devices. Applied Surface Science. 159-160. 243–249. 5 indexed citations

20.

Gosain, Dharam Pal, et al.. (1997). Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 15(3). 554–557. 546 indexed citations breakdown →

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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