Aleš Chvála

555 total citations
77 papers, 448 citations indexed

About

Aleš Chvála is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Aleš Chvála has authored 77 papers receiving a total of 448 indexed citations (citations by other indexed papers that have themselves been cited), including 65 papers in Electrical and Electronic Engineering, 46 papers in Condensed Matter Physics and 23 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Aleš Chvála's work include GaN-based semiconductor devices and materials (46 papers), Silicon Carbide Semiconductor Technologies (39 papers) and Semiconductor materials and devices (28 papers). Aleš Chvála is often cited by papers focused on GaN-based semiconductor devices and materials (46 papers), Silicon Carbide Semiconductor Technologies (39 papers) and Semiconductor materials and devices (28 papers). Aleš Chvála collaborates with scholars based in Slovakia, France and Germany. Aleš Chvála's co-authors include D. Donoval, Juraj Marek, Jaroslav Kováč, A. Šatka, P. Kordoš, Miroslav Mikolášek, J. Kuzmı́k, S.L. Delage, Martin Donoval and M.A. diForte-Poisson and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Aleš Chvála

65 papers receiving 431 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Aleš Chvála Slovakia 13 383 278 123 76 68 77 448
H. Alfred Hung United States 14 644 1.7× 414 1.5× 110 0.9× 46 0.6× 95 1.4× 48 683
Juraj Marek Slovakia 13 292 0.8× 172 0.6× 62 0.5× 47 0.6× 48 0.7× 65 332
Zhaoke Bian China 11 321 0.8× 319 1.1× 96 0.8× 182 2.4× 51 0.8× 16 400
H. Ziad Belgium 11 405 1.1× 215 0.8× 140 1.1× 79 1.0× 35 0.5× 20 476
M. Roth United States 12 364 1.0× 131 0.5× 121 1.0× 119 1.6× 79 1.2× 25 441
Yang Lu China 14 398 1.0× 415 1.5× 121 1.0× 169 2.2× 86 1.3× 65 530
Junjie Yang China 13 271 0.7× 275 1.0× 98 0.8× 135 1.8× 110 1.6× 55 423
Olivier Jardel France 14 776 2.0× 729 2.6× 182 1.5× 112 1.5× 63 0.9× 43 874
Qihao Song United States 14 583 1.5× 494 1.8× 69 0.6× 147 1.9× 75 1.1× 48 690
Shiro Ozaki Japan 13 477 1.2× 430 1.5× 110 0.9× 225 3.0× 115 1.7× 50 596

Countries citing papers authored by Aleš Chvála

Since Specialization
Citations

This map shows the geographic impact of Aleš Chvála's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Aleš Chvála with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Aleš Chvála more than expected).

Fields of papers citing papers by Aleš Chvála

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Aleš Chvála. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Aleš Chvála. The network helps show where Aleš Chvála may publish in the future.

Co-authorship network of co-authors of Aleš Chvála

This figure shows the co-authorship network connecting the top 25 collaborators of Aleš Chvála. A scholar is included among the top collaborators of Aleš Chvála based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Aleš Chvála. Aleš Chvála is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Marton, Marián, et al.. (2025). Nanoscale Engineering of Si/BDD/TiO2 heterostructure interfaces to enhance photoelectrochemical performance. Applied Surface Science Advances. 27. 100757–100757. 1 indexed citations
2.
Gucmann, Filip, Aleš Chvála, R. Kúdela, et al.. (2024). Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off. ACS Applied Electronic Materials. 3 indexed citations
3.
Chvála, Aleš, et al.. (2024). Neural Network for Calibration of Electrical Models of Semiconductor Devices. Zenodo (CERN European Organization for Nuclear Research). 22–25.
4.
Stoklas, R., S. Hasenöhrl, D. Gregušová, et al.. (2023). Vertical GaN Transistor with Semi‐Insulating Channel. physica status solidi (a). 220(16). 1 indexed citations
5.
Marek, Juraj, et al.. (2022). Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress. Materials. 15(22). 8230–8230. 3 indexed citations
6.
7.
Chvála, Aleš, Juraj Marek, Ł. Stuchlíková, et al.. (2021). Characterization and evaluation of current transport properties of power SiC Schottky diode. Materials Today Proceedings. 53. 285–288. 9 indexed citations
8.
Stoklas, R., Aleš Chvála, S. Hasenöhrl, et al.. (2021). Analysis and Modeling of Vertical Current Conduction and Breakdown Mechanisms in Semi-Insulating GaN Grown on GaN: Role of Deep Levels. IEEE Transactions on Electron Devices. 68(5). 2365–2371. 7 indexed citations
9.
Mikolášek, Miroslav, et al.. (2020). Deriving the exchange times for a model of trap-assisted tunnelling. Journal of Electrical Engineering. 71(1). 31–36.
10.
Kováč, Jaroslav, et al.. (2020). Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor. Semiconductor Science and Technology. 36(2). 25019–25019. 5 indexed citations
11.
Kováč, Jaroslav, et al.. (2019). Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT. Semiconductor Science and Technology. 34(6). 65021–65021. 10 indexed citations
12.
Kováč, Jaroslav, et al.. (2019). AlGaN/GaN HEMT channel temperature determination utilizing external heater. Semiconductor Science and Technology. 35(2). 25006–25006. 4 indexed citations
13.
Chvála, Aleš, Juraj Marek, D. Donoval, et al.. (2018). Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations. IEEE Transactions on Electron Devices. 65(6). 2666–2669. 8 indexed citations
14.
Marek, Juraj, et al.. (2018). Power p-GaN HEMT Under Unclamped Inductive Switching Conditions. 1–5. 8 indexed citations
15.
Chvála, Aleš, Juraj Marek, A. Šatka, et al.. (2018). Methodology and More Accurate Electrothermal Model for Fast Simulation of Power HEMTs. 1–8.
16.
17.
Marek, Juraj, et al.. (2014). Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations. Solid-State Electronics. 94. 44–50. 24 indexed citations
18.
Marek, Juraj, et al.. (2014). Influence of structure geometry and bulk traps on switching transients of InAlN/GaN HEMT. 29. 1–4. 1 indexed citations
19.
Chvála, Aleš, et al.. (2014). Three-Dimensional Electro-Thermal Verilog-A Model of Power MOSFET for Circuit Simulation. Journal of Physics Conference Series. 494. 12006–12006. 2 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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