Stewart Bland

503 total citations
59 papers, 378 citations indexed

About

Stewart Bland is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Stewart Bland has authored 59 papers receiving a total of 378 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 30 papers in Atomic and Molecular Physics, and Optics and 10 papers in Condensed Matter Physics. Recurrent topics in Stewart Bland's work include Semiconductor Quantum Structures and Devices (25 papers), Semiconductor materials and devices (21 papers) and Semiconductor Lasers and Optical Devices (12 papers). Stewart Bland is often cited by papers focused on Semiconductor Quantum Structures and Devices (25 papers), Semiconductor materials and devices (21 papers) and Semiconductor Lasers and Optical Devices (12 papers). Stewart Bland collaborates with scholars based in United Kingdom, France and Mexico. Stewart Bland's co-authors include J. Mimila‐Arroyo, H. Thomas, D. V. Morgan, J. I. Davies, A. I. Ferguson, D. Burns, M. Hetterich, Martin D. Dawson, E.A.J.M. Bente and P.V. Kelly and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Stewart Bland

53 papers receiving 350 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Stewart Bland United Kingdom 12 300 225 85 63 42 59 378
H. Okazaki Japan 12 296 1.0× 107 0.5× 75 0.9× 52 0.8× 29 0.7× 23 389
Baoxue Bo China 10 361 1.2× 215 1.0× 156 1.8× 62 1.0× 47 1.1× 80 422
Corinne Miramond France 6 178 0.6× 171 0.8× 88 1.0× 59 0.9× 109 2.6× 14 321
A I Baranov Russia 10 215 0.7× 171 0.8× 67 0.8× 28 0.4× 109 2.6× 61 286
Gayle Echo Thayer United States 8 204 0.7× 254 1.1× 123 1.4× 41 0.7× 93 2.2× 13 395
S. Chatraphorn Thailand 12 213 0.7× 156 0.7× 150 1.8× 70 1.1× 43 1.0× 35 361
C.Y. Nakakura United States 11 143 0.5× 189 0.8× 98 1.2× 12 0.2× 101 2.4× 19 307
T. Shioda Japan 9 344 1.1× 143 0.6× 223 2.6× 39 0.6× 29 0.7× 17 430
C. W. Kim South Korea 11 334 1.1× 72 0.3× 196 2.3× 32 0.5× 27 0.6× 21 419
Metin Özer Türkiye 12 303 1.0× 196 0.9× 113 1.3× 12 0.2× 68 1.6× 26 385

Countries citing papers authored by Stewart Bland

Since Specialization
Citations

This map shows the geographic impact of Stewart Bland's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Stewart Bland with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Stewart Bland more than expected).

Fields of papers citing papers by Stewart Bland

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Stewart Bland. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Stewart Bland. The network helps show where Stewart Bland may publish in the future.

Co-authorship network of co-authors of Stewart Bland

This figure shows the co-authorship network connecting the top 25 collaborators of Stewart Bland. A scholar is included among the top collaborators of Stewart Bland based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Stewart Bland. Stewart Bland is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bland, Stewart & Brett Conner. (2015). Mapping out the additive manufacturing landscape. Metal Powder Report. 70(3). 115–119. 5 indexed citations
2.
Bland, Stewart. (2011). Nanoprocessing. Materials Today. 14(4). 131–131. 1 indexed citations
3.
Bland, Stewart. (2010). Multiple personalities of the graphene amplifier. Materials Today. 13(12). 11–11. 3 indexed citations
4.
Bland, Stewart, et al.. (2003). Carbon site switching in carbon doped GaAs, its dependence on carbon concentration. Superficies y Vacío. 16(1). 37–39. 2 indexed citations
5.
Malis, Oana, Claire Gmachl, J. M. Fastenau, et al.. (2003). MBE development of dilute nitrides for commercial long-wavelength laser applications. Journal of Crystal Growth. 251(1-4). 432–436. 3 indexed citations
6.
Mimila‐Arroyo, J., et al.. (2003). Dependence of burn-in effect on thermal annealing of the GaAs:C base layer in GaInP heterojunction bipolar transistors. Applied Physics Letters. 82(17). 2910–2912. 4 indexed citations
7.
Mimila‐Arroyo, J., Stewart Bland, & A. Lusson. (2002). Carbon site switching in carbon-doped GaAs. Applied Physics Letters. 81(8). 1435–1437. 1 indexed citations
8.
Bland, Stewart. (2002). Future challenges for MOVPE – an industrial perspective. Journal of Materials Science Materials in Electronics. 13(11). 679–682. 2 indexed citations
9.
Rushworth, S., Lesley M. Smith, Rajesh Odedra, et al.. (2002). Correlation of reduced oxygen content in precursors with improved MOVPE layer quality. Journal of Crystal Growth. 248. 86–90. 8 indexed citations
10.
Cassette, S., S.L. Delage, E. Chartier, et al.. (2001). Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability. Materials Science and Engineering B. 80(1-3). 279–283. 7 indexed citations
11.
Cherkaoui, K., et al.. (2001). Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p+GaAs base layers. Materials Science and Engineering B. 80(1-3). 284–288. 1 indexed citations
12.
Mimila‐Arroyo, J. & Stewart Bland. (2001). HYDROGEN CO-DOPING IN III-V SEMICONDUCTORS: DOPANT PASSIVATION AND CARBON REACTIVATION KINETICS IN C-GaAs. Modern Physics Letters B. 15(17n19). 585–592. 2 indexed citations
13.
Mimila‐Arroyo, J. & Stewart Bland. (2000). Acceptor reactivation kinetics in heavily carbon-doped GaAs epitaxial layers. Applied Physics Letters. 77(8). 1164–1166. 16 indexed citations
14.
Kildemo, Morten, et al.. (2000). Optical and structural properties of InGaP heterostructures. Thin Solid Films. 364(1-2). 244–248. 11 indexed citations
15.
Morgan, D. V., et al.. (1995). AlGaInP LEDs using reactive thermally evaporatedtransparent conducting indium tin oxide (ITO). Electronics Letters. 31(19). 1691–1692. 10 indexed citations
16.
Agnew, Megan, et al.. (1990). 1.2 Gbit/s fully integrated transimpedance optical receiver OEIC for 1.3–1.55 μm transmission systems. Electronics Letters. 26(6). 377–379. 16 indexed citations
17.
Bland, Stewart, et al.. (1989). Monolithic integration of fully ion-implanted lateral GaInAs pin detector/InP JFET amplifier for 1.3–1.55 μm optical receivers. Electronics Letters. 25(8). 522–523. 13 indexed citations
18.
Bland, Stewart, et al.. (1989). New fabrication technology for long-wavelength receiver OEICs. Electronics Letters. 25(2). 156–157. 18 indexed citations
19.
Bland, Stewart, et al.. (1989). Application of Pt/a-Si:H gate GaAs FETs to wide noise margin direct-coupled FET logic. Electronics Letters. 25(20). 1344–1345. 3 indexed citations
20.
Bland, Stewart, et al.. (1988). Monolithic GaInAs/InP FET inverter amplifiers for long-wavelength OEICs. Electronics Letters. 24(21). 1349–1351. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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