N. Sarazin

455 total citations
18 papers, 368 citations indexed

About

N. Sarazin is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, N. Sarazin has authored 18 papers receiving a total of 368 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Condensed Matter Physics, 14 papers in Electrical and Electronic Engineering and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in N. Sarazin's work include GaN-based semiconductor devices and materials (17 papers), Radio Frequency Integrated Circuit Design (9 papers) and Ga2O3 and related materials (5 papers). N. Sarazin is often cited by papers focused on GaN-based semiconductor devices and materials (17 papers), Radio Frequency Integrated Circuit Design (9 papers) and Ga2O3 and related materials (5 papers). N. Sarazin collaborates with scholars based in France, Germany and Poland. N. Sarazin's co-authors include S.L. Delage, E. Morvan, M. Tordjman, Olivier Jardel, Christophe Gaquière, M.A. Poisson, M. A. Poisson, Jean‐Marie Bluet, C. Dua and C. Bru‐Chevallier and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and Journal of Crystal Growth.

In The Last Decade

N. Sarazin

18 papers receiving 349 citations

Peers

Countries citing papers authored by N. Sarazin

Since Specialization

Citations

This map shows the geographic impact of N. Sarazin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Sarazin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Sarazin more than expected).

Fields of papers citing papers by N. Sarazin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Sarazin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Sarazin. The network helps show where N. Sarazin may publish in the future.

Co-authorship network of co-authors of N. Sarazin

This figure shows the co-authorship network connecting the top 25 collaborators of N. Sarazin. A scholar is included among the top collaborators of N. Sarazin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Sarazin. N. Sarazin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

#	Work	Indexed citations
1	A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications 2012 ·Olivier Jardel, (unknown), (unknown), R. Aubry, E. Chartier, N. Sarazin, M.A. Poisson, S. Piotrowicz, (unknown), (unknown), S.L. Delage, Philippe Eudeline	11
2	First demonstration of AlInN/GaN HEMTs amplifiers at K band 2012 ·Olivier Jardel, (unknown), (unknown), (unknown), Tibault Reveyrand, N. Sarazin, (unknown), (unknown), (unknown), M. Oualli, (unknown), S. Piotrowicz, E. Morvan, M.A. Poisson, (unknown)	7
3	Magneto-optical trapping and detection of atoms through a transparent atom chip 2011 ·(unknown), (unknown), E. Morvan, N. Sarazin, Jean-Paul Pocholle, Jakob Reichel, Christine Guerlin, Sylvain Schwartz	1
4	Development of InAlN/GaN HEMTs Power Devices in S-Band 2011 ·S. Piotrowicz, E. Chartier, Olivier Jardel, (unknown), (unknown), J. Jacquet, (unknown), E. Morvan, R. Aubry, N. Sarazin, C. Dua, M. Oualli, (unknown), S.L. Delage	4
5	43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers 2010 ·2010 IEEE MTT-S International Microwave Symposium ·S. Piotrowicz, Z. Ouarch, E. Chartier, R. Aubry, (unknown), D. Floriot, J. Jacquet, Olivier Jardel, E. Morvan, Tibault Reveyrand, N. Sarazin, S.L. Delage	42
6	43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers 2010 ·2010 IEEE MTT-S International Microwave Symposium ·S. Piotrowicz, Z. Ouarch, E. Chartier, R. Aubry, (unknown), D. Floriot, J. Jacquet, Olivier Jardel, E. Morvan, Tibault Reveyrand, N. Sarazin, (unknown)	13
7	LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications 2010 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·M. A. Poisson, N. Sarazin, (unknown), M. Tordjman, J. Di Persio, R. Langer, E. Iliopoulos, A. Georgakilas, (unknown), M. Guziewicz, E. Kamińska, A. Piotrowska, Christophe Gaquière, M. Oualli, E. Chartier, E. Morvan, (unknown)	6
8	Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage 2010 ·Applied Physics Letters ·(unknown), Jean‐Marie Bluet, M. A. Poisson, N. Sarazin, C. Dua, C. Bru‐Chevallier	77
9	A new nonlinear HEMT model for AlGaN/GaN switch applications 2009 ·Olivier Jardel, (unknown), C. Charbonniaud, J. Jacquet, N. Sarazin, E. Morvan, R. Aubry, M.A. Poisson, Jean-Pierre Teyssier, S. Piotrowicz, Raymond Quéré	18
10	AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz 2009 ·IEEE Electron Device Letters ·N. Sarazin, E. Morvan, M.A. Poisson, M. Oualli, Christophe Gaquière, Olivier Jardel, O. Drisse, M. Tordjman, (unknown), S.L. Delage	104
11	Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-band 2009 ·S. Piotrowicz, (unknown), E. Chartier, J. Jacquet, Olivier Jardel, (unknown), (unknown), E. Morvan, R. Aubry, C. Dua, M. Oualli, (unknown), N. Sarazin, M.A. diForte-Poisson, Jacques A. Delaire, (unknown), S.L. Delage	5
12	GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application 2008 ·Journal of Crystal Growth ·M.A. Poisson, (unknown), M. Tordjman, J. Di Persio, R. Langer, L. Tóth, B. Pécz, M. Guziewicz, (unknown), R. Aubry, E. Morvan, N. Sarazin, Christophe Gaquière, Gaudenzio Meneghesso, Virginie Hoel, (unknown), S.L. Delage	3
13	Characteristics of Al ₂ O ₃ /AlInN/GaN MOSHEMT 2007 ·Electronics Letters ·Farid Medjdoub, N. Sarazin, M. Tordjman, (unknown), M.A. di Forte-Poisson, Mato Knez, E. Delos, Christophe Gaquière, S.L. Delage, E. Kohn	55
14	Structural characterisation of GaAlN/GaN HEMT heterostructures 2006 ·Applied Surface Science ·N. Sarazin, Olivier Durand, (unknown), M.A. Poisson, J. Di Persio	1
15	III‐Nitrides semiconductor compounds for microwave devices 2006 ·physica status solidi (a) ·M.A. di Forte-Poisson, (unknown), N. Sarazin, M. Tordjman, J. Di Persio	4
16	In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD 2006 ·Journal of Crystal Growth ·M.A. Poisson, N. Sarazin, (unknown), M. Tordjman, E. Morvan, Régis Aubry, J. Di Persio, (unknown)	4
17	MOCVD growth of group III nitrides for high power, high frequency applications 2005 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·M. A. Poisson, (unknown), M. Tordjman, N. Sarazin, J. Di Persio	6
18	LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices 2004 ·Journal of Crystal Growth ·M.A. Poisson, (unknown), M. Tordjman, R. Aubry, N. Sarazin, (unknown), E. Morvan, S.L. Delage, J. Di Persio, Raymond Quéré, B. Grimbert, Virginie Hoel, E. Delos, D. Ducatteau, Christophe Gaquière	7

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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