J. Di Persio

701 citations

37 papers · 607 indexed · h-index 15

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials

Papers in

Condensed Matter Physics 15
- GaN-based semiconductor devices and materials 14
Structural Biology 1

Co-authors: Alain Lefebvre Rafael Perez Martinez J. C. Doukhan Q. Wahab Erik Janzén C. Hallin Anne Henry G. Saada
Journals: Journal of Crystal Growth (9 papers)Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties (3 papers)Applied Physics Letters (2 papers)physica status solidi (b) (2 papers)Philosophical Magazine Letters (2 papers)
Partner nations: France Germany Sweden

In The Last Decade

J. Di Persio

36 papers receiving 565 citations

Peers

Countries citing papers authored by J. Di Persio

Since Specialization

Citations

This map shows the geographic impact of J. Di Persio's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Di Persio with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Di Persio more than expected).

Fields of papers citing papers by J. Di Persio

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Di Persio. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Di Persio. The network helps show where J. Di Persio may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Di Persio, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Di Persio Line = papers co-authored together J. Di Persio links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application Journal of Crystal Growth ·M.A. Poisson, M. Magis, M. Tordjman, J. Di Persio, R. Langer, L. Tóth, B. Pécz, M. Guziewicz, J. Thorpe, R. Aubry, E. Morvan, N. Sarazin, Christophe Gaquière, Gaudenzio Meneghesso, Virginie Hoel, Jean-Claude Jacquet, S.L. Delage	2008	3
2	Structural characterisation of GaAlN/GaN HEMT heterostructures Applied Surface Science ·N. Sarazin, Olivier Durand, M. Magis, M.A. Poisson, J. Di Persio	2006	1
3	Interplays between plastic relaxation, surface morphology and composition modulation in InAlAs graded buffer layers under various growth conditions J.‐M. Chauveau, Y. Cordier, D. Ferré, Y. Androussi, J. Di Persio	2003	1
4	Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes Materials science forum ·Q. Wahab, Alexsandre Ellison, C. Hallin, Anne Henry, J. Di Persio, Rafael Perez Martinez, Erik Janzén	2000	22
5	Low tensile strain GaInAs:uid/GaAs:C superlattice heterostructures grown by LP MOCVD: application to GaInP/GaAs heterojunction bipolar transistor base layer Journal of Crystal Growth ·M.A. di Forte-Poisson, Serge Bernard, L. Teisseire, C. Brylinski, S. Cassette, J. Di Persio	2000	1
6	Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes Applied Physics Letters ·Q. Wahab, A. Ellison, Anne Henry, Erik Janzén, C. Hallin, J. Di Persio, Rafael Perez Martinez	2000	149
7	Modelling of the defect structure in GaN MOCVD thin films by X-ray diffraction Materials Science and Engineering B ·F. Huet, M.A. di Forte-Poisson, Albert Romann, M. Tordjman, J. Di Persio, B. Pécz	1999	4
8	The behavior of Ni/Au contacts under rapid thermal annealing in GaN device structures Journal of Electronic Materials ·F. Huet, M-A. Di Forte-Poisson, M. Calligaro, J. Olivier, F. Wyczisk, J. Di Persio	1999	5
9	Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy Journal of Crystal Growth ·M.A. di Forte-Poisson, F. Huet, Albert Romann, M. Tordjman, D. Lancefield, E. Pereira, J. Di Persio, B. Pécz	1998	23
10	Cross-slip in the first stages of plastic relaxation in In _x Ga _1−x As/GaAs heterostructures Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·C. Ulhaq-Bouillet, Alain Lefebvre, J. Di Persio	1994	14
11	Interactions of misfit dislocations in In _x Ga _{1- x} As/GaAs interfaces Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·Alain Lefebvre, C. Herbeaux, J. Di Persio	1991	27
12	A new type of misfit dislocation multiplication process in In_xGa_1−xAs/GaAs strained-layer superlattices Philosophical Magazine Letters ·Alain Lefebvre, C. Herbeaux, Corinne Bouillet, J. Di Persio	1991	40
13	Misfit dislocations in In0.15Ga0.85As/GaAs strained-layer superlattices Applied Physics Letters ·C. Herbeaux, J. Di Persio, Alain Lefebvre	1989	32
14	On the determination of the nature of misfit dislocations in semiconductor strained-layer heterostructures Philosophical Magazine Letters ·C. Herbeaux, J. Di Persio, Alain Lefebvre	1989	7
15	Defect Characterization In InP Epitaxial Layers Grown By LP-MOCVD Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·A. M. Huber, J. Di Persio, M.A. di Forte-Poisson, C. Brylinski, R. Bisaro, C. Grattepain, O. Lagorsse	1987	5
16	On the Mobility of 1/6 (112) Partial Dislocations under High Stress in Semi-Insulating GaAs Materials science forum ·Y. Androussi, P. François, J. Di Persio, G. Vanderschaeve, Alain Lefebvre	1986	6
17	ON SOME ASPECTS OF THE MOBILITY OF DISLOCATIONS IN SLIGHTLY n-DOPED InSb SINGLE CRYSTALS Le Journal de Physique Colloques ·J. Di Persio, R. Kesteloot	1983	4
18	Initiation of Dislocation Slip in the B.C.C. Lattice. The Case of the van der Waals B.C.C. Hexamine physica status solidi (a) ·J. Di Persio, B. Escaig	1977	17
19	Déformation plastique du tellure monocristallin. II. Théorie physica status solidi (b) ·J. Di Persio, J. C. Doukhan, G. Saada	1970	10
20	Observation des dislocations dans le tellure par une technique de figures d'attaque Materials Science and Engineering ·J. Di Persio, J. C. Doukhan, G. Saada	1969	22

About J. Di Persio

J. Di Persio is a scholar working on Condensed Matter Physics, Structural Biology, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 37 papers that have together received 607 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (14 papers), Semiconductor Quantum Structures and Devices (12 papers), Semiconductor materials and interfaces (11 papers), Semiconductor materials and devices (9 papers), Advanced Semiconductor Detectors and Materials (7 papers), ZnO doping and properties (6 papers), Ga2O3 and related materials (5 papers) and Chalcogenide Semiconductor Thin Films (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (315 citations), Condensed Matter Physics (109 citations), Electrical and Electronic Engineering (433 citations), Electronic, Optical and Magnetic Materials (84 citations) and Materials Chemistry (198 citations). J. Di Persio has collaborated with scholars based in France, Germany and Sweden. Frequent co-authors include Alain Lefebvre, Rafael Perez Martinez, J. C. Doukhan, Q. Wahab, Erik Janzén, C. Hallin, Anne Henry, G. Saada, A. Ellison and Y. Androussi. Their work appears in journals such as Journal of Crystal Growth, Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, Applied Physics Letters, physica status solidi (b) and Philosophical Magazine Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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