M.A. Poisson

833 total citations
34 papers, 617 citations indexed

About

M.A. Poisson is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M.A. Poisson has authored 34 papers receiving a total of 617 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 22 papers in Electrical and Electronic Engineering and 16 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M.A. Poisson's work include GaN-based semiconductor devices and materials (21 papers), Semiconductor Quantum Structures and Devices (14 papers) and Semiconductor materials and devices (10 papers). M.A. Poisson is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Semiconductor Quantum Structures and Devices (14 papers) and Semiconductor materials and devices (10 papers). M.A. Poisson collaborates with scholars based in France, Germany and Austria. M.A. Poisson's co-authors include Manijeh Razeghi, J.P. Duchemin, Christophe Gaquière, M.A. Brummell, M. Voos, N. Sarazin, R. J. Nicholas, S.L. Delage, B. Boudart and E. Morvan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

M.A. Poisson

34 papers receiving 580 citations

Peers

M.A. Poisson

EEE

CMP

AMPO

EOMM

Barbara Kühn Germany

O. Imafuji Japan

Shinichi Takigawa Japan

I. Eliashevich United States

R. I. Gorbunov Russia

A. Weimar Germany

I. Berishev United States

M. Nido Japan

Kazuhiko Hosomi Japan

Jun-Youn Kim South Korea

Barbara Kühn Germany

M.A. Poisson

212 ×0.5

EEE

274 ×0.8

CMP

208 ×0.6

AMPO

164 ×1.7

107 ×1.2

EOMM

Citations per year, relative to M.A. Poisson M.A. Poisson (= 1×) peers Barbara Kühn

Countries citing papers authored by M.A. Poisson

Since Specialization

Citations

This map shows the geographic impact of M.A. Poisson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.A. Poisson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.A. Poisson more than expected).

Fields of papers citing papers by M.A. Poisson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.A. Poisson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.A. Poisson. The network helps show where M.A. Poisson may publish in the future.

Co-authorship network of co-authors of M.A. Poisson

This figure shows the co-authorship network connecting the top 25 collaborators of M.A. Poisson. A scholar is included among the top collaborators of M.A. Poisson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.A. Poisson. M.A. Poisson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Poisson, M.A., et al.. (2016). Comment articuler projets individuel, collectif et de territoire ? Le cas d’un collectif de transformation et commercialisation en circuits courts. Gestion 2000. Volume 33(2). 75–93. 8 indexed citations

Dobos, László, B. Pécz, L. Tóth, et al.. (2013). Annealed Ti/Cr/Al contacts on n-GaN. Vacuum. 100. 46–49. 7 indexed citations

Jardel, Olivier, R. Aubry, E. Chartier, et al.. (2012). A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications. 11 indexed citations

Jardel, Olivier, Tibault Reveyrand, N. Sarazin, et al.. (2012). First demonstration of AlInN/GaN HEMTs amplifiers at K band. 31. 1–3. 7 indexed citations

Piotrowska, A., E. Kamińska, Michał A. Borysiewicz, et al.. (2010). Metal contacts to wide bandgap semiconductor structures for RF power applications. International Conference on Microwaves, Radar & Wireless Communications. 1–2. 1 indexed citations

Vilalta‐Clemente, Arantxa, et al.. (2010). Transmission electron microscopy and XRD investigations of InAlN/GaN thin heterostructures for HEMT applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7602. 76020K–76020K. 1 indexed citations

Jardel, Olivier, C. Charbonniaud, J. Jacquet, et al.. (2009). A new nonlinear HEMT model for AlGaN/GaN switch applications. 73–76. 18 indexed citations

Sarazin, N., E. Morvan, M.A. Poisson, et al.. (2009). AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz. IEEE Electron Device Letters. 31(1). 11–13. 104 indexed citations

Poisson, M.A., M. Tordjman, J. Di Persio, et al.. (2008). GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application. Journal of Crystal Growth. 310(23). 5232–5236. 3 indexed citations

10.

Redondo‐Cubero, A., R. Gago, F. González‐Posada, et al.. (2008). Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction. Thin Solid Films. 516(23). 8447–8452. 11 indexed citations

11.

Kuzmı́k, J., S. Bychikhin, D. Pogány, et al.. (2006). Temperature analysis of AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping. HAL (Le Centre pour la Communication Scientifique Directe). 54–57. 6 indexed citations

12.

Sarazin, N., et al.. (2006). Structural characterisation of GaAlN/GaN HEMT heterostructures. Applied Surface Science. 253(1). 228–231. 1 indexed citations

13.

Boudart, B., Y. Guhel, J.C. Pesant, P. Dhamelincourt, & M.A. Poisson. (2002). Raman characterization of Ar⁺ ion‐implanted GaN. Journal of Raman Spectroscopy. 33(4). 283–286. 12 indexed citations

14.

Ruterana, P., G. Nouet, Th. Kehagias, et al.. (1999). The Microstructure of Ti/Al and TiN Ohmic Contacts to Gallium Nitride. physica status solidi (a). 176(1). 767–771. 19 indexed citations

15.

Lippens, D., et al.. (1992). Resonant tunneling of holes in Ga0.51In0.49P/GaAs double-barrier heterostructures. Journal of Applied Physics. 71(4). 2057–2059. 7 indexed citations

16.

Brummell, M.A., R. J. Nicholas, J. C. Portal, Manijeh Razeghi, & M.A. Poisson. (1983). Two dimensional magnetophonon resonance in GaInAsInP superlattices. Physica B+C. 117-118. 753–755. 8 indexed citations

17.

Portal, J.C., J. Cisowski, R. J. Nicholas, et al.. (1983). Two-dimensional magnetophonon resonance. I. GaInAs-InP superlattices. Journal of Physics C Solid State Physics. 16(17). L573–L578. 33 indexed citations

18.

Razeghi, M., et al.. (1982). TEG in LP-MO CVD Ga _0.47 In _0.53 As-InP superlattice. Electronics Letters. 18(8). 339–340. 16 indexed citations

19.

Nicholas, R. J., M.A. Brummell, J. C. Portal, Manijeh Razeghi, & M.A. Poisson. (1982). Quantum oscillations at a Ga0.47In0.53AsInP heterojunction interface. Solid State Communications. 43(11). 825–828. 29 indexed citations

20.

Guldner, Y., J. P. Vieren, P. Voisin, et al.. (1982). Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition. Applied Physics Letters. 40(10). 877–879. 75 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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