C. Brylinski

1.0k citations

46 papers · 835 indexed · h-index 16

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Radio Frequency Integrated Circuit Design

Papers in

Atomic and Molecular Physics, and Optics 31
- Semiconductor Quantum Structures and Devices 19
- Semiconductor materials and interfaces 16
Electrical and Electronic Engineering 43
- Silicon Carbide Semiconductor Technologies 21
- Semiconductor materials and devices 17
- Radio Frequency Integrated Circuit Design 8
- Photonic and Optical Devices 5
- Semiconductor Lasers and Optical Devices 5

Co-authors: O. Noblanc M.A. di Forte-Poisson C. Arnodo F. Meyer S. Cassette E. Chartier S.L. Delage H. Blanck
Journals: Materials Science and Engineering B (4 papers)Semiconductor Science and Technology (4 papers)Journal of Applied Physics (3 papers)IEEE Transactions on Electron Devices (3 papers)Electronics Letters (3 papers)
Partner nations: France Bulgaria Hungary

In The Last Decade

C. Brylinski

44 papers receiving 767 citations

Peers

Countries citing papers authored by C. Brylinski

Since Specialization

Citations

This map shows the geographic impact of C. Brylinski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Brylinski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Brylinski more than expected).

Fields of papers citing papers by C. Brylinski

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Brylinski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Brylinski. The network helps show where C. Brylinski may publish in the future.

Co-authorship network

The 25 scholars most cited alongside C. Brylinski, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Brylinski Line = papers co-authored together C. Brylinski links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Conductance deep-level transient spectroscopy study of 1μm gate length 4H-SiC MESFETs Solid-State Electronics ·M. Gassoumi, Jean‐Marie Bluet, J. Wang, Hassen Maaref, Gérard Guillot, E. Morvan, C. Dua, C. Brylinski	2005	7
2	Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power IEEE Transactions on Microwave Theory and Techniques ·D.M.McClatchy III, Marianus Aldrik Maka, E. Morvan, C. Dua, C. Brylinski, 篤松本, 이서규	2003	13
3	Low tensile strain GaInAs:uid/GaAs:C superlattice heterostructures grown by LP MOCVD: application to GaInP/GaAs heterojunction bipolar transistor base layer Journal of Crystal Growth ·M.A. di Forte-Poisson, Serge Bernard, Ronaldo Rams Aguilera, C. Brylinski, S. Cassette, J. Di Persio	2000	1
4	Influence of Interface States on Output Characteristics of 4H-SiC MESFETs on Semi–Insulating Substrates MRS Proceedings ·N. Sghaier, A. Souifi, Jean‐Marie Bluet, H. Jammes, Gérard Guillot, O. Noblanc, C. Brylinski	2000	4
5	4H-SiC MESFETs behavior after high dose irradiation IEEE Transactions on Nuclear Science ·Todd Gutowski, O. Noblanc, Niu Jun-fang, F. Joffre, C. Brylinski	2000	12
6	Thermostable Ti/Au/Pt/Ti Schottky contacts to n-type 4H-SiC Semiconductor Science and Technology ·Vladimir I. Sklyanov, A. Kakanakova‐Georgieva, Roumen Kakanakov, Ts. Marinova, Àrea d'Urbanisme, Infraestructures, Habitatge, Medi Ambient i Sistemes d'Informació i Telecomunicacions, U. P. India, O. Noblanc, C. Arnodo, S. Cassette, C. Brylinski	1998	7
7	Silicon carbide for microwave power applications Diamond and Related Materials ·C. Brylinski	1997	13
8	Nickel based ohmic contacts on SiC Materials Science and Engineering B ·Ts. Marinova, A. Kakanakova‐Georgieva, V. Krastev, Roumen Kakanakov, Zhong Junwe, Vladimir I. Sklyanov, O. Noblanc, C. Arnodo, S. Cassette, C. Brylinski, B. Pécz, G. Radnóczi, Elizabeth Downing	1997	99
9	GaInP/GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposition for voltage-controlled oscillators and power amplifier microwave monolithic integrated circuits Materials Science and Engineering B ·M.A. di Forte-Poisson, C. Brylinski, S.L. Delage, H. Blanck, D. Floriot, S. Cassette, E. Chartier, Dirk Pons, Alexander Huber	1994	8
10	Power GaInP/GaAs HBT MMICs S.L. Delage, D. Floriot, H. Blanck, S. Cassette, E. Chartier, M.A. diForte-Poisson, C. Brylinski, M Dubernard, Dirk Pons, Pierre Roux, Paul Andrew Bourne, G Vyncke	1994	14
11	Band offset of GaAs-GaInP heterojunctions Semiconductor Science and Technology ·Shipeng Feng, Judyta Lubacha-Sember, V. Donchev, J. C. Bourgoin, Xiaoqin Zhai, C. Brylinski, S.L. Delage, H. Blanck, S. Alaya	1993	23
12	Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor Electronics Letters ·R. Plana, J. Graffeuil, S.L. Delage, H. Blanck, M.A. di Forte-Poisson, C. Brylinski, E. Chartier	1992	22
13	Resonant tunneling of holes in Ga0.51In0.49P/GaAs double-barrier heterostructures Journal of Applied Physics ·D. Lippens, Patrick Mounaix, Chuhan Wang, M.A. Poisson, C. Brylinski	1992	7
14	Low-loss and low-drive-voltage electro-optical phase modulator at 106 μm Optics Letters ·D. Delacourt, R. Blondeau, C. Brylinski, M.A. di Forte-Poisson, L.G. Klikoff, M. Papuchon	1990	1
15	LP-MOCVD InP Gunn Diodes Developed For 94 Gift Millimeter Range Operation Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·M.A. di Forte-Poisson, C. Brylinski, Bennett Adamson, Dirk Pons, Abigail Farrell, Samir Ahmad, M. Calligaro, Sota Tanaka	1989	3
16	Low-pressure metalorganic chemical vapor deposition growth and characterization of δ-doped InP Journal of Applied Physics ·M.A. di Forte-Poisson, C. Brylinski, Teruki Miyahara, René Dimónaco, J.C. Portal	1989	11
17	Magnetophonon resonance in n⁺n^-n⁺InP up to 40 T Semiconductor Science and Technology ·Koji Yamada, N. Miura, L. Eaves, J. C. Portal, M.A. di Forte-Poisson, C. Brylinski	1988	4
18	Amplitude and phase modulation by free-carrier injection in III–V semiconducting waveguides for the 106-μm wavelength Optics Letters ·D. Delacourt, R. Blondeau, C. Brylinski, M.A. di Forte-Poisson, Arnau Dòria Cerezo, Bryan Manrique-Gallos, M. Papuchon	1987	2
19	Buried-Channel Insulated Gate Fets On MOCVD Grown Inp/InGaAs/InP Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·R. E. Davall, Kanchan Pande, M.A. diForte-Poisson, C. Brylinski, Detrano R.Wong, M. Razeghi	1987	3
20	Defect Characterization In InP Epitaxial Layers Grown By LP-MOCVD Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·A. M. Huber, J. Di Persio, M.A. di Forte-Poisson, C. Brylinski, R. Bisaro, C. Grattepain, Syazwan Noordin	1987	5

About C. Brylinski

C. Brylinski is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, Instrumentation and Astronomy and Astrophysics, having authored 46 papers that have together received 835 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (21 papers), Semiconductor Quantum Structures and Devices (19 papers), Semiconductor materials and devices (17 papers), Semiconductor materials and interfaces (16 papers), Radio Frequency Integrated Circuit Design (8 papers), GaN-based semiconductor devices and materials (7 papers), Photonic and Optical Devices (5 papers) and Semiconductor Lasers and Optical Devices (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (549 citations), Electrical and Electronic Engineering (787 citations), Condensed Matter Physics (101 citations), Ceramics and Composites (16 citations) and Electronic, Optical and Magnetic Materials (35 citations). C. Brylinski has collaborated with scholars based in France, Bulgaria and Hungary. Frequent co-authors include O. Noblanc, M.A. di Forte-Poisson, C. Arnodo, F. Meyer, S. Cassette, E. Chartier, S.L. Delage, H. Blanck, A. Kakanakova‐Georgieva and V. Aubry-Fortuna. Their work appears in journals such as Materials Science and Engineering B, Semiconductor Science and Technology, Journal of Applied Physics, IEEE Transactions on Electron Devices and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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