L. Tóth

491 total citations
40 papers, 385 citations indexed

About

L. Tóth is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, L. Tóth has authored 40 papers receiving a total of 385 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 15 papers in Condensed Matter Physics and 14 papers in Materials Chemistry. Recurrent topics in L. Tóth's work include GaN-based semiconductor devices and materials (15 papers), Metal and Thin Film Mechanics (12 papers) and Semiconductor materials and devices (9 papers). L. Tóth is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Metal and Thin Film Mechanics (12 papers) and Semiconductor materials and devices (9 papers). L. Tóth collaborates with scholars based in Hungary, Germany and France. L. Tóth's co-authors include B. Pécz, D. Schryvers, L.E. Tanner, Á. Barna, M. Alomari, G. Radnóczi, M.A. di Forte-Poisson, Z. Paál, Ildikó Cora and László Dobos and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

L. Tóth

39 papers receiving 379 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
L. Tóth Hungary	13	185	161	155	90	89	40	385
Q. Huang China	11	171 0.9×	55 0.3×	160 1.0×	42 0.5×	133 1.5×	36	331
Antonio Orozco United States	9	111 0.6×	110 0.7×	258 1.7×	233 2.6×	78 0.9×	36	478
Dimitris V. Bellas Greece	9	210 1.1×	92 0.6×	196 1.3×	95 1.1×	35 0.4×	14	434
Junqing Lu South Korea	13	235 1.3×	53 0.3×	231 1.5×	114 1.3×	41 0.5×	28	466
L. Gan United States	11	182 1.0×	54 0.3×	129 0.8×	121 1.3×	215 2.4×	19	385
Hyunhang Park United States	10	65 0.4×	110 0.7×	84 0.5×	32 0.4×	80 0.9×	16	333
Hiroshi Osanai Japan	10	424 2.3×	81 0.5×	108 0.7×	62 0.7×	201 2.3×	13	578
Minho Joo South Korea	10	348 1.9×	60 0.4×	327 2.1×	57 0.6×	53 0.6×	27	531
Hyun Kyu Kim South Korea	13	205 1.1×	347 2.2×	450 2.9×	185 2.1×	65 0.7×	41	603
J. W. Sinclair United States	12	61 0.3×	168 1.0×	77 0.5×	120 1.3×	69 0.8×	18	292

Countries citing papers authored by L. Tóth

Since Specialization

Citations

This map shows the geographic impact of L. Tóth's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Tóth with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Tóth more than expected).

Fields of papers citing papers by L. Tóth

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Tóth. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Tóth. The network helps show where L. Tóth may publish in the future.

Co-authorship network of co-authors of L. Tóth

This figure shows the co-authorship network connecting the top 25 collaborators of L. Tóth. A scholar is included among the top collaborators of L. Tóth based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Tóth. L. Tóth is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ťapajna, M., D. Gregušová, Filip Gucmann, et al.. (2020). Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs. Applied Surface Science. 528. 146824–146824. 2 indexed citations

Gregušová, D., L. Tóth, S. Hasenöhrl, et al.. (2019). InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region. Japanese Journal of Applied Physics. 58(SC). SCCD21–SCCD21. 2 indexed citations

Szenes, G. & L. Tóth. (2019). Basic restrictions for theories of ion-induced track formation: ignored relationships between experimental data. Physica Scripta. 94(11). 115810–115810. 4 indexed citations

Ballabio, Andrea, Sergio Bietti, Andrea Scaccabarozzi, et al.. (2019). GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers. Scientific Reports. 9(1). 17529–17529. 13 indexed citations

Bietti, Sergio, Francesco Basso Basset, Alexey Fedorov, et al.. (2018). Ga metal nanoparticle-GaAs quantum molecule complexes for terahertz generation. Nanotechnology. 29(36). 365602–365602. 3 indexed citations

Alomari, M., et al.. (2018). Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates. IEEE Transactions on Electron Devices. 65(7). 2939–2947. 35 indexed citations

Alomari, M., M. Heuken, Ildikó Cora, et al.. (2018). Temperature Dependent Vertical Conduction of GaN HEMT Structures on Silicon and Bulk GaN Substrates. physica status solidi (a). 6 indexed citations

Nemcsics, Ákos, et al.. (2016). Investigation of MBE grown inverted GaAs quantum dots. Microelectronics Reliability. 59. 60–63. 4 indexed citations

Dobos, László, B. Pécz, L. Tóth, et al.. (2013). Annealed Ti/Cr/Al contacts on n-GaN. Vacuum. 100. 46–49. 7 indexed citations

10.

Lohner, T., Emil Agócs, P. Petrík, et al.. (2013). Spectroellipsometric and ion beam analytical studies on a glazed ceramic object with metallic lustre decoration. Thin Solid Films. 571. 715–719.

11.

Győrffy, Nóra, I. Bakos, S. Szabó, et al.. (2009). Preparation, characterization and catalytic testing of GePt catalysts. Journal of Catalysis. 263(2). 372–379. 21 indexed citations

12.

Poisson, M.A., M. Tordjman, J. Di Persio, et al.. (2008). GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application. Journal of Crystal Growth. 310(23). 5232–5236. 3 indexed citations

13.

Dobos, László, B. Pécz, L. Tóth, et al.. (2006). Metal contacts to n-GaN. Applied Surface Science. 253(2). 655–661. 20 indexed citations

14.

Paál, Z., Detre Teschner, N.M. Rodríguez, et al.. (2005). Rh/GNF catalysts: Characterization and catalytic performance in methylcyclopentane reactions. Catalysis Today. 102-103. 254–258. 7 indexed citations

15.

Pécz, B., M.A. di Forte-Poisson, F. Huet, et al.. (1999). Growth of GaN layers onto misoriented (0001) sapphire by metalorganic chemical vapor deposition. Journal of Applied Physics. 86(11). 6059–6067. 25 indexed citations

16.

Balogh, J., et al.. (1997). Diffusion amorphization and interface properties of FeB multilayers. Applied Physics A. 65(1). 23–27. 14 indexed citations

17.

Schryvers, D., et al.. (1995). Electron microscopy study of the formation of Ni5Al3 in a Ni62.5Al37.5 B2 alloy—I. Precipitation and growth. Acta Metallurgica et Materialia. 43(11). 4045–4056. 27 indexed citations

18.

Paál, Z., Á. Barna, P.B. Barna, & L. Tóth. (1981). The cavitated structure of sintered platinum black; electron microscopic evidences and some catalytic properties. Materials Chemistry. 6(2). 95–102. 7 indexed citations

19.

Tóth, L., et al.. (1979). Transient photocurrent shape in a-As2Se3 films using gold contact in drift mobility experiment. Solid State Communications. 31(11). 785–790. 2 indexed citations

20.

Tóth, L. & Sarolta Karcsú. (1976). Über die Lokalisation der Acetylcholinesterase in der Area post-rema und Area subpostrema der Ratte. Licht- und elektronen-histochemische Untersuchungen. Acta Histochemica. 56(2). 245–260. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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