M. A. Poisson

567 citations

30 papers · 431 indexed · h-index 8

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices

Papers in

Condensed Matter Physics 21
- GaN-based semiconductor devices and materials 21
Atomic and Molecular Physics, and Optics 14
- Semiconductor Quantum Structures and Devices 13

Co-authors: Christophe Gaquière A. El Fatimy D. Théron W. Knap N. Sarazin Jean‐Marie Bluet C. Dua C. Bru‐Chevallier
Journals: Journal of Applied Physics (3 papers)Materials Science and Engineering B (3 papers)Applied Physics Letters (2 papers)Journal of Physics Condensed Matter (2 papers)Optics Express (1 paper)
Partner nations: France Germany United Kingdom

In The Last Decade

M. A. Poisson

29 papers receiving 413 citations

Peers

Countries citing papers authored by M. A. Poisson

Since Specialization

Citations

This map shows the geographic impact of M. A. Poisson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. A. Poisson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. A. Poisson more than expected).

Fields of papers citing papers by M. A. Poisson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. A. Poisson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. A. Poisson. The network helps show where M. A. Poisson may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. A. Poisson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. A. Poisson Line = papers co-authored together M. A. Poisson links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Manga: Manufacturable GaN SiC substrates and GaN epi wafer supply chain Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·M. Mikulla, R H Whitehouse, Joan Upton Hall, M. A. Poisson, Enrico Zanoni, Martin Kuball	2014	4
2	Electronic transitions and fermi edge singularity in polar heterostructures studied by absorption and emission spectroscopy Journal of Applied Physics ·洪新发, Daniela Cavalcoli, Albert Minj, Beatrice Fraboni, A. Cavallini, Piero Gamarra, M. A. Poisson	2012	6
3	AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources Journal of Applied Physics ·A. El Fatimy, N. Dyakonova, Yahya Moubarak Meziani, Taiichi Otsuji, W. Knap, А. П. Курдеко, P. Denti, D. Théron, Christophe Gaquière, M. A. Poisson, S.L. Delage, P. Prystawko, C. Skierbiszewski	2010	113
4	LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·M. A. Poisson, N. Sarazin, C. Marques, M. Tordjman, J. Di Persio, R. Langer, E. Iliopoulos, A. Georgakilas, Nicole Michael, M. Guziewicz, E. Kamińska, A. Piotrowska, Christophe Gaquière, M. Oualli, E. Chartier, E. Morvan, Irene Sanchez-Lopez	2010	6
5	Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage Applied Physics Letters ·Anahit Zhoraevna Farmanyan, Jean‐Marie Bluet, M. A. Poisson, N. Sarazin, C. Dua, C. Bru‐Chevallier	2010	77
6	Terahertz imaging using high electron mobility transistors as plasma wave detectors Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·孔令博, D. Coquillat, M. Sakowicz, H. Videlier, F. Teppe, N. Dyakonova, W. Knap, HARYEY BLANK, Mea Darghouth, D. Seliuta, Irmantas Kašalynas, Gintaras Valušis, P. Denti, D. Théron, Christophe Gaquière, M. A. Poisson	2009	6
7	Nitride based nanotransistors as new sources and detectors of THz radiations Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·A. El Fatimy, F. Teppe, S. Boubanga, N. Dyakonova, Bernard Gil, D. Coquillat, D. Seliuta, Gintaras Valušis, M. A. Poisson, E. Morvan, Christophe Gaquière, D. Théron, A. Cappy, W. Knap	2008	1
8	Room-temperature terahertz emission from nanometer field-effect transistors Applied Physics Letters ·N. Dyakonova, A. El Fatimy, G. S. Salishchev, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, Christophe Gaquière, D. Théron, A. Cappy	2006	98
9	Resonant Raman scattering study of Ar⁺ion-implanted AlGaN Journal of Physics Condensed Matter ·B. Boudart, Y. Guhel, J.C. Pesant, P. Dhamelincourt, M. A. Poisson	2005	1
10	Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures MRS Proceedings ·M Ragini, M. Barbé, François Jomard, D. Ballutaud, J. Chevallier, M. A. Poisson, S.L. Delage, C. Dua, Y. Cordier, Maxime Hugues, Fabrice Semond, F. Natali, 智彦金森, J. Massies	2005	2
11	MOCVD growth of group III nitrides for high power, high frequency applications Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·M. A. Poisson, C. Marques, M. Tordjman, N. Sarazin, J. Di Persio	2005	6
12	Raman characterization of Mg⁺ion-implanted GaN Journal of Physics Condensed Matter ·B. Boudart, Y. Guhel, J.C. Pesant, P. Dhamelincourt, M. A. Poisson	2003	17
13	GaN Epitaxy: How to Characterize Hazards for the Operators physica status solidi (a) ·Bennett Adamson, M. A. Poisson, أ ابتهاج عبد العزیز کلنتن, M. Tordjman, M. Koutmos	2002	0
14	Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs Microwave and Optical Technology Letters ·Y. Guhel, B. Boudart, Virginie Hoel, Daphné Hung Kung Sow, Christophe Gaquière, Назаров Виктор Викторович, M. A. Poisson, I. Daumiller, E. Kohn	2002	14
15	Quantitative measurement of In fluctuation inside MOCVD InGaN QWs Materials Science and Engineering B ·P. Ruterana, S. Kret, M. A. Poisson	2002	2
16	Photoconductance measurements and Stokes shift in InGaN alloys Materials Science and Engineering B ·J.-L. Reverchon, F. Huet, M. A. Poisson, J.-Y. Duboz, B. Damilano, N. Grandjean, J. Massies	2001	4
17	Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability Materials Science and Engineering B ·S. Cassette, S.L. Delage, E. Chartier, D. Floriot, M. A. Poisson, (unknown), C. Grattepain, Y. N. Lee, R. Plana, Stewart Bland	2001	7
18	Photoconductance measurements on thin InGaN layers Journal of Applied Physics ·R.A.M. Schrijver, F. Huet, M. A. Poisson, Jean‐Yves Duboz	2000	10
19	High energy erbium laser end-pumped by a laser diode bar array coupled to a Nonimaging Optic Concentrator Optics Communications ·Розова Ольга Андреевна, Gilles Feugnet, Jean-Paul Pocholle, R. Blondeau, M. A. Poisson, J.P. Duchemin	1998	6
20	Performance of a multiplexed linear array of 300 InGaAs photodiodes Jean‐Pierre Moy, Md Touhiduzzaman Tarun, Ricardo González, J. Chabbal, M. A. Poisson	1987	1

About M. A. Poisson

M. A. Poisson is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Ceramics and Composites, having authored 30 papers that have together received 431 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (21 papers), Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and devices (7 papers), Ga2O3 and related materials (6 papers), Terahertz technology and applications (6 papers), Silicon Carbide Semiconductor Technologies (4 papers), Radio Frequency Integrated Circuit Design (3 papers) and ZnO doping and properties (3 papers). The work is most often cited by research in Condensed Matter Physics (222 citations), Atomic and Molecular Physics, and Optics (229 citations), Electrical and Electronic Engineering (325 citations), Astronomy and Astrophysics (68 citations) and Electronic, Optical and Magnetic Materials (72 citations). M. A. Poisson has collaborated with scholars based in France, Germany and United Kingdom. Frequent co-authors include Christophe Gaquière, A. El Fatimy, D. Théron, W. Knap, N. Sarazin, Jean‐Marie Bluet, C. Dua, C. Bru‐Chevallier, S.L. Delage and C. Skierbiszewski. Their work appears in journals such as Journal of Applied Physics, Materials Science and Engineering B, Applied Physics Letters, Journal of Physics Condensed Matter and Optics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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