Nathalie Labat

413 citations

48 papers · 245 indexed · h-index 8

Co-authors: A. Touboul Benoît Lambert Y. Danto Cristell Maneux Mohsine Bouya P. Perdu Thomas Zimmer G. Verzellesi
Topics: Semiconductor materials and devices (30 papers)Advancements in Semiconductor Devices and Circuit Design (18 papers)Integrated Circuits and Semiconductor Failure Analysis (17 papers)
Cited by: Condensed Matter Physics Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: IEEE Transactions on Electron Devices Journal of Crystal Growth IEEE Electron Device Letters
Partner nations: France Canada Netherlands

In The Last Decade

Nathalie Labat

42 papers receiving 232 citations

Peers

Countries citing papers authored by Nathalie Labat

Since Specialization

Citations

This map shows the geographic impact of Nathalie Labat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nathalie Labat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nathalie Labat more than expected).

Fields of papers citing papers by Nathalie Labat

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nathalie Labat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nathalie Labat. The network helps show where Nathalie Labat may publish in the future.

Co-authorship network of co-authors of Nathalie Labat

This figure shows the co-authorship network connecting the top 25 collaborators of Nathalie Labat. A scholar is included among the top collaborators of Nathalie Labat based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nathalie Labat. Nathalie Labat is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	DC and RF aging test of AlGaN/GaN HEMT technology on SiC substrate 2025 ·Microelectronics Reliability ·(unknown),(unknown),Magali De Matos,(unknown),Nathalie Labat,Benoît Lambert,(unknown)	0
2	Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications 2023 ·Microelectronics Reliability ·(unknown),(unknown),Farid Medjdoub,Nathalie Labat,(unknown),(unknown)	2
3	Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors 2022 ·Journal of Crystal Growth ·(unknown),(unknown),Sébastien Chenot,J. Brault,M. Némoz,P. Vennéguès,B. Damilano,S. Vézian,Éric Frayssinet,(unknown),(unknown),F. Lecourt,Nathalie Labat,Hassan Maher,Y. Cordier	1
4	Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors 2021 ·Solid-State Electronics ·(unknown),(unknown),Sébastien Chenot,J. Brault,B. Damilano,S. Vézian,Éric Frayssinet,(unknown),(unknown),F. Lecourt,Nathalie Labat,Hassan Maher,Y. Cordier	7
5	New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor 2020 ·Semiconductor Science and Technology ·(unknown),(unknown),(unknown),Éric Frayssinet,(unknown),F. Lecourt,N. Defrance,Nathalie Labat,François Boone,A. Soltani,Abdelatif Jaouad,Y. Cordier,Hassan Maher	2
6	Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors 2020 ·Semiconductor Science and Technology ·(unknown),(unknown),Sébastien Chenot,J. Brault,B. Damilano,S. Vézian,Éric Frayssinet,(unknown),(unknown),N. Defrance,F. Lecourt,Nathalie Labat,Hassan Maher,Y. Cordier	2
7	Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests 2019 ·Microelectronics Reliability ·(unknown),Benoît Lambert,(unknown),(unknown),Nathalie Labat,(unknown)	3
8	Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress 2013 ·Microelectronics Reliability ·(unknown),Benoît Lambert,(unknown),(unknown),D. Floriot,(unknown),H. Blanck,(unknown),(unknown),(unknown),(unknown),Nathalie Labat	22
9	Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow 2011 ·Microelectronics Reliability ·A. Aubert,Sébastien Jacques,(unknown),Nathalie Labat,H. Frémont	2
10	Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing 2010 ·Microelectronics Reliability ·A. Aubert,(unknown),(unknown),Nathalie Labat,H. Frémont	6
11	Off‐state and on‐state breakdown of GaAs MESFET, PHEMT and Power PHEMT 2006 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown),(unknown),Nathalie Labat,(unknown),(unknown)	0
12	Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor 2005 ·Solid-State Electronics ·Cristell Maneux,Mohamed Belhaj,(unknown),Nathalie Labat,A. Touboul	13
13	Methodology to compare on-state breakdown loci of GaAs FET's 2005 ·(unknown),(unknown),Nathalie Labat,A. Touboul,(unknown)	1
14	Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors 2004 ·Microelectronics Reliability ·Nathalie Labat,(unknown),Cristell Maneux,(unknown)	6
15	InP/InGaAs/InP DHBT submitted to bias and thermal stresses: LF base noise analysis 2004 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Cristell Maneux,J. C. Martin,Nathalie Labat,(unknown)	2
16	Analysis of GaAs HBT failure mechanisms: impact on life test strategy 2002 ·Cristell Maneux,Nathalie Labat,(unknown),A. Touboul,Y. Danto,(unknown),(unknown),(unknown)	1
17	Simulation of Base Current Evolution in C-In doped GaInP/GaAs HBT Under Current Induced Stress 1998 ·European Solid-State Device Research Conference ·Cristell Maneux,Nathalie Labat,A. Touboul,Y. Danto,S.L. Delage,S. Cassette	1
18	Induced damages on CMOS and bipolar integrated structures under focused ion beam irradiation 1998 ·Microelectronics Reliability ·(unknown),P. Perdu,(unknown),(unknown),Nathalie Labat,A. Touboul,Y. Danto	6
19	Complementarity of Drain Current Transient Spectroscopy (DCTS) and G.R. Noise Analysis to Detect Traps in HEMTs 1996 ·European Solid-State Device Research Conference ·(unknown),Nathalie Labat,A. Touboul,Y. Danto,(unknown)	2
20	COMPARISON OF CONVENTIONAL AND PSEUDOMORPHIC HEMTs PERFORMANCES BY DRAIN CURRENT TRANSIENT SPECTROSCOPY AND L.F. CHANNEL NOISE 1996 ·Quality and Reliability Engineering International ·(unknown),Nathalie Labat,A. Touboul,Y. Danto,(unknown)	7

About Nathalie Labat

Nathalie Labat is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 48 papers that have together received 245 indexed citations. Recurring topics across this work include Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). The work is most often cited by research in Condensed Matter Physics (126 citations), Electrical and Electronic Engineering (221 citations) and Electronic, Optical and Magnetic Materials (48 citations). Nathalie Labat has collaborated with scholars based in France, Canada and Netherlands. Frequent co-authors include A. Touboul, Benoît Lambert, Y. Danto, Cristell Maneux, Mohsine Bouya, P. Perdu, Thomas Zimmer, G. Verzellesi, Mustapha Faqir and Michel Bonnet. Their work appears in journals such as IEEE Transactions on Electron Devices, Journal of Crystal Growth and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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