Nathalie Labat

413 citations

48 papers · 245 indexed · h-index 8

Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials 17
Electrical and Electronic Engineering
- Semiconductor materials and devices 30
- Advancements in Semiconductor Devices and Circuit Design 18
- Integrated Circuits and Semiconductor Failure Analysis 17
- Radio Frequency Integrated Circuit Design 11
- Silicon Carbide Semiconductor Technologies 8
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 5
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 11
Structural Biology

Co-authors: A. Touboul Benoît Lambert Y. Danto Cristell Maneux Mohsine Bouya P. Perdu Thomas Zimmer G. Verzellesi
Cited by: Condensed Matter Physics Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: IEEE Transactions on Electron Devices (3 papers)Journal of Crystal Growth (1 paper)IEEE Electron Device Letters (1 paper)
Partner nations: France Canada Netherlands

In The Last Decade

Nathalie Labat

42 papers receiving 232 citations

Peers

Countries citing papers authored by Nathalie Labat

Since Specialization

Citations

This map shows the geographic impact of Nathalie Labat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nathalie Labat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nathalie Labat more than expected).

Fields of papers citing papers by Nathalie Labat

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nathalie Labat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nathalie Labat. The network helps show where Nathalie Labat may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Nathalie Labat, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Nathalie Labat Line = papers co-authored together Nathalie Labat links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	DC and RF aging test of AlGaN/GaN HEMT technology on SiC substrate Microelectronics Reliability ·Thomas Pallaro,Tristan Dubois,Magali De Matos,Christophe Chang,Nathalie Labat,Benoît Lambert,N. Malbert	2025	0
2	Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications Microelectronics Reliability ·N. Said,Kathia Harrouche,Farid Medjdoub,Nathalie Labat,Jean-Guy Tartarin,Nathalie Malbert	2023	2
3	Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Journal of Crystal Growth ·Thi Huong Ngo,Rémi Comyn,Sébastien Chenot,J. Brault,M. Némoz,P. Vennéguès,B. Damilano,S. Vézian,Éric Frayssinet,Flavien Cozette,Nicolas Defrance,F. Lecourt,Nathalie Labat,Hassan Maher,Y. Cordier	2022	1
4	Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors Solid-State Electronics ·Thi Huong Ngo,Rémi Comyn,Sébastien Chenot,J. Brault,B. Damilano,S. Vézian,Éric Frayssinet,Flavien Cozette,Nicolas Defrance,F. Lecourt,Nathalie Labat,Hassan Maher,Y. Cordier	2021	7
5	New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor Semiconductor Science and Technology ·Flavien Cozette,Bilal Hassan,Christophe Rodriguez,Éric Frayssinet,Rémi Comyn,F. Lecourt,N. Defrance,Nathalie Labat,François Boone,A. Soltani,Abdelatif Jaouad,Y. Cordier,Hassan Maher	2020	2
6	Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors Semiconductor Science and Technology ·Thi Huong Ngo,Rémi Comyn,Sébastien Chenot,J. Brault,B. Damilano,S. Vézian,Éric Frayssinet,Flavien Cozette,Christophe Rodriguez,N. Defrance,F. Lecourt,Nathalie Labat,Hassan Maher,Y. Cordier	2020	2
7	Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests Microelectronics Reliability ·Florent Magnier,Benoît Lambert,Christophe Chang,A. Curutchet,Nathalie Labat,Nathalie Malbert	2019	3
8	Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress Microelectronics Reliability ·Laurent Brunel,Benoît Lambert,P. Mezenge,J. Bataille,D. Floriot,Jan Grünenpütt,H. Blanck,Dominique Carisetti,Y. Gourdel,N. Malbert,A. Curutchet,Nathalie Labat	2013	22
9	Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow Microelectronics Reliability ·A. Aubert,Sébastien Jacques,Stéphanie Pétremont,Nathalie Labat,H. Frémont	2011	2
10	Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing Microelectronics Reliability ·A. Aubert,J.-P. Rebrassé,L. Dantas de Morais,Nathalie Labat,H. Frémont	2010	6
11	Off‐state and on‐state breakdown of GaAs MESFET, PHEMT and Power PHEMT Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Naoufel Ismaïl,N. Malbert,Nathalie Labat,André Touboul,Jean‐Luc Muraro	2006	0
12	Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor Solid-State Electronics ·Cristell Maneux,Mohamed Belhaj,B. Grandchamp,Nathalie Labat,A. Touboul	2005	13
13	Methodology to compare on-state breakdown loci of GaAs FET's Naoufel Ismaïl,N. Malbert,Nathalie Labat,A. Touboul,Jean‐Luc Muraro	2005	1
14	Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors Microelectronics Reliability ·Nathalie Labat,Nathalie Malbert,Cristell Maneux,André Touboul	2004	6
15	InP/InGaAs/InP DHBT submitted to bias and thermal stresses: LF base noise analysis Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Cristell Maneux,J. C. Martin,Nathalie Labat,A. Touboul	2004	2
16	Analysis of GaAs HBT failure mechanisms: impact on life test strategy Cristell Maneux,Nathalie Labat,Nathalie Saysset,A. Touboul,Y. Danto,Jean-Michel Dumas,P. Launay,J. Dangla	2002	1
17	Simulation of Base Current Evolution in C-In doped GaInP/GaAs HBT Under Current Induced Stress European Solid-State Device Research Conference ·Cristell Maneux,Nathalie Labat,A. Touboul,Y. Danto,S.L. Delage,S. Cassette	1998	1
18	Induced damages on CMOS and bipolar integrated structures under focused ion beam irradiation Microelectronics Reliability ·J. Benbrik,P. Perdu,B. Benteo,R. Desplats,Nathalie Labat,A. Touboul,Y. Danto	1998	6
19	Complementarity of Drain Current Transient Spectroscopy (DCTS) and G.R. Noise Analysis to Detect Traps in HEMTs European Solid-State Device Research Conference ·Nathalie Saysset,Nathalie Labat,A. Touboul,Y. Danto,Jean-Michel Dumas	1996	2
20	COMPARISON OF CONVENTIONAL AND PSEUDOMORPHIC HEMTs PERFORMANCES BY DRAIN CURRENT TRANSIENT SPECTROSCOPY AND L.F. CHANNEL NOISE Quality and Reliability Engineering International ·Nathalie Saysset,Nathalie Labat,A. Touboul,Y. Danto,Jean-Michel Dumas	1996	7

About Nathalie Labat

Nathalie Labat is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 48 papers that have together received 245 indexed citations. Recurring topics across this work include Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers), GaN-based semiconductor devices and materials (17 papers), Radio Frequency Integrated Circuit Design (11 papers), Semiconductor Quantum Structures and Devices (11 papers), Silicon Carbide Semiconductor Technologies (8 papers) and Ga2O3 and related materials (5 papers). The work is most often cited by research in Condensed Matter Physics (126 citations), Electrical and Electronic Engineering (221 citations) and Electronic, Optical and Magnetic Materials (48 citations). Nathalie Labat has collaborated with scholars based in France, Canada and Netherlands. Frequent co-authors include A. Touboul, Benoît Lambert, Y. Danto, Cristell Maneux, Mohsine Bouya, P. Perdu, Thomas Zimmer, G. Verzellesi, Mustapha Faqir and Michel Bonnet. Their work appears in journals such as IEEE Transactions on Electron Devices, Journal of Crystal Growth and IEEE Electron Device Letters.

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