L. Escotte

893 total citations
56 papers, 562 citations indexed

About

L. Escotte is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, L. Escotte has authored 56 papers receiving a total of 562 indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Electrical and Electronic Engineering, 29 papers in Atomic and Molecular Physics, and Optics and 5 papers in Condensed Matter Physics. Recurrent topics in L. Escotte's work include Radio Frequency Integrated Circuit Design (43 papers), Semiconductor Quantum Structures and Devices (24 papers) and Semiconductor Lasers and Optical Devices (15 papers). L. Escotte is often cited by papers focused on Radio Frequency Integrated Circuit Design (43 papers), Semiconductor Quantum Structures and Devices (24 papers) and Semiconductor Lasers and Optical Devices (15 papers). L. Escotte collaborates with scholars based in France, Germany and Mexico. L. Escotte's co-authors include J. Graffeuil, R. Plana, Olivier Llopis, A. Gruhle, S.L. Delage, Gilles Cibiel, S. Piotrowicz, Thierry Parra, H. Blanck and J. A. Reynoso‐Hernández and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

L. Escotte

53 papers receiving 542 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Escotte France 13 535 205 85 73 32 56 562
M. Borgarino Italy 12 441 0.8× 179 0.9× 57 0.7× 36 0.5× 16 0.5× 81 470
K. Yhland Sweden 11 413 0.8× 99 0.5× 41 0.5× 47 0.6× 58 1.8× 42 454
R. Bosch Germany 9 596 1.1× 203 1.0× 159 1.9× 57 0.8× 30 0.9× 21 633
C. Dahl Germany 11 291 0.5× 186 0.9× 37 0.4× 72 1.0× 12 0.4× 27 409
S.M. Lardizabal United States 11 365 0.7× 165 0.8× 78 0.9× 55 0.8× 15 0.5× 23 396
John J. Pekarik United States 15 812 1.5× 179 0.9× 32 0.4× 92 1.3× 22 0.7× 53 853
B.R. Allen United States 15 548 1.0× 191 0.9× 98 1.2× 66 0.9× 117 3.7× 48 582
B. Jagannathan United States 20 1.1k 2.0× 167 0.8× 27 0.3× 109 1.5× 19 0.6× 55 1.1k
Rumen Kozhuharov Sweden 12 606 1.1× 73 0.4× 44 0.5× 48 0.7× 85 2.7× 39 618
M. Hirayama Japan 12 330 0.6× 125 0.6× 30 0.4× 33 0.5× 11 0.3× 37 349

Countries citing papers authored by L. Escotte

Since Specialization
Citations

This map shows the geographic impact of L. Escotte's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Escotte with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Escotte more than expected).

Fields of papers citing papers by L. Escotte

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Escotte. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Escotte. The network helps show where L. Escotte may publish in the future.

Co-authorship network of co-authors of L. Escotte

This figure shows the co-authorship network connecting the top 25 collaborators of L. Escotte. A scholar is included among the top collaborators of L. Escotte based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Escotte. L. Escotte is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rudolph, Matthias, L. Escotte, & Ralf Doerner. (2014). GaN HEMT noise model performance under nonlinear operation. 1416–1419. 1 indexed citations
2.
Rudolph, Matthias, L. Escotte, & Ralf Doerner. (2014). GaN HEMT noise model performance under nonlinear operation. 38. 472–475. 4 indexed citations
3.
Escotte, L., et al.. (2012). Low-Frequency Noise Sources and Gain Stability in Microwave Amplifiers for Radiometry. IEEE Transactions on Microwave Theory and Techniques. 60(8). 2616–2621. 4 indexed citations
4.
Escotte, L., et al.. (2011). L-band radiometer design for long-term stability measurement of one-port devices. International Journal of Microwave and Wireless Technologies. 4(1). 119–126. 1 indexed citations
5.
Escotte, L., et al.. (2006). Behavioral Modeling of Microwave Amplifiers Including Large-signal and Noise Interaction. 46. 95–98. 2 indexed citations
6.
Escotte, L., et al.. (2003). On-wafer noise characterization of low-noise amplifiers in the Ka-band. IEEE Transactions on Instrumentation and Measurement. 52(5). 1606–1610. 5 indexed citations
7.
8.
Plana, R., et al.. (2002). Low-frequency noise in millimeter-wave Si/SiGe heterojunction bipolar transistors. 7. 1431–1434. 2 indexed citations
9.
Gruhle, A., M. Mouis, Olivier Llopis, et al.. (2002). Noise properties of SiGe heterojunction bipolar transistors. 33. 24–32. 5 indexed citations
10.
Escotte, L., et al.. (2002). HIGH-FREQUENCY NOISE IN PSEUDOMORPHIC DOUBLE-HETEROJUNCTION HIGH ELECTRON MOBILITY TRANSISTORS. Fluctuation and Noise Letters. 2(1). L13–L19. 2 indexed citations
11.
Llopis, Olivier & L. Escotte. (2002). Cryogenically cooled HEMT's from the device towards the applications. 5. 339–342. 1 indexed citations
12.
Borgarino, M., L. Bary, Olivier Llopis, et al.. (2001). Noise behavior in SiGe devices. Solid-State Electronics. 45(11). 1891–1897. 10 indexed citations
13.
Escotte, L., et al.. (1998). High-frequency noise in heterojunction bipolar transistors. Solid-State Electronics. 42(4). 661–663. 4 indexed citations
14.
Escotte, L., et al.. (1995). Noise modeling of microwave heterojunction bipolar transistors. IEEE Transactions on Electron Devices. 42(5). 883–889. 50 indexed citations
15.
Escotte, L., et al.. (1995). Small-signal and noise model extraction technique for heterojunction bipolar transistor at microwave frequencies. IEEE Transactions on Microwave Theory and Techniques. 43(2). 293–298. 33 indexed citations
16.
Reynoso‐Hernández, J. A., L. Escotte, R. Plana, & J. Graffeuil. (1995). Deep level characterisation in GaAs FETs by meansof the frequencydispersion of the output impedance. Electronics Letters. 31(8). 677–678. 11 indexed citations
17.
Plana, R., L. Escotte, Olivier Llopis, et al.. (1994). Excess noise in microwave GaInP/GaAs heterojunction bipolar transistors. AMS Acta (University of Bologna). 3 indexed citations
18.
Plana, R., et al.. (1993). Low-Frequency Noise and Microwave Noise Parameters in Si/SiGe Heterojunction Bipolar Transistors. European Solid-State Device Research Conference. 51–54. 5 indexed citations
19.
Escotte, L., R. Plana, & J. Graffeuil. (1993). Evaluation of noise parameter extraction methods. IEEE Transactions on Microwave Theory and Techniques. 41(3). 382–387. 58 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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